Abstract: One aspect of the present invention is a cryogenic memory cell to be used in a cryogenic memory system. The cell includes a composite Josephson Junction herein called a flux latching junction. The flux latching junction stores a binary value by virtue of a part of that junction being maintained in a normal or a superconducting state. The system further includes a write line that by the action of a magnetic field, switches the state of the flux latching junction between the two possible binary alternatives. The system also includes a means to sense the state of the flux latching junction using a SQUID or a single Josephson Junction.