Abstract: A semiconductor cell structure includes a semiconductor substrate with an original semiconductor surface having a first set active regions and a second set of active regions; a STI region surrounding the first set and the second set active regions, a set of PMOS transistors disposed in the first set active regions; a set of NMOS transistors disposed in the second set of active regions; a VDD contacting line electrically coupled to the set of PMOS transistors; a VSS contacting line electrically coupled to the set of NMOS transistors; wherein a bottom surface of each of the source regions and drain regions of the PMOS transistors and the NMOS transistors is isolated from the semiconductor substrate by a localized insulator region, and these localized insulator regions are disposed below the original semiconductor surface.

Abstract: A semiconductor device structure includes a semiconductor substrate, an active region, a STI (shallow trench isolation) region, and an interconnection layer. The semiconductor substrate has a semiconductor surface. The active region is within the semiconductor substrate, wherein the active region includes a transistor, and the transistor includes a gate structure with a bottom surface under the semiconductor surface, a first conductive region, and a second conductive region. The STI region surrounds the active region. The interconnection layer is extended beyond the transistor and electrically coupled to the transistor at a connection position under the gate structure. The first conductive region includes a lighted doped region, and a top surface of the lighted doped region is aligned or substantially aligned with an edge of the gate structure.

Abstract: The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and/or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located within a semiconductor body region of the semiconductor substrate; and a vertical heat dissipation column in the semiconductor substrate and surrounding the semiconductor body region. Wherein the vertical heat dissipation column comprises a thermal dissipation material with a thermal conductivity higher than that of the semiconductor substrate or that of silicon oxide.

Abstract: The present invention discloses a device structure including heat removal structure (such as high thermal conductivity column and/or plate within the semiconductor substrate) to enhance heat dissipation. The device structure comprises a semiconductor substrate with an original semiconductor surface; a circuit element located within a semiconductor body region of the semiconductor substrate; and a horizontal heat dissipation plate in the semiconductor substrate and under the circuit element. Wherein the horizontal heat dissipation plate comprises a first thermal dissipation material with a first thermal conductivity higher than the thermal conductivity of the semiconductor substrate or the thermal conductivity of silicon oxide.

Abstract: A DRAM structure includes a semiconductor substrate, a plurality of DRAM cells, a Bitline, a sense amplifier, and a local wordline. The semiconductor substrate has a top surface. Each DRAM cell includes an access transistor and a storage capacitor. The Bitline has a first terminal extended along the plurality of DRAM cells to a second terminal, and the Bitline is coupled to each access transistor of the plurality of DRAM cells. The sense amplifier is coupled to the first terminal of the Bitline. The local wordline is connected to a gate terminal of the access transistor of a first DRAM cell in the plurality of DRAM cells. A refresh cycle time, a write cycle time, or a read cycle time of the DRAM structure is less than 5 ns.

Abstract: A semiconductor structure includes a semiconductor substrate, an epitaxy layer, a dielectric layer, a semiconductor layer, a first semiconductor device and a second semiconductor device. The semiconductor substrate has first region and a second region. The epitaxy layer is disposed on and within the first region of the semiconductor substrate. The dielectric layer is disposed on and within the second region of the semiconductor substrate. The semiconductor layer is disposed on the dielectric layer and within the second region. The first semiconductor device is formed on the epitaxy layer. The second semiconductor device is formed on the semiconductor layer.

Abstract: A composite semiconductor substrate includes a bulk semiconductor substrate and a first well region. The bulk semiconductor substrate has an original semiconductor surface and with a first doping type. The first well region is in the bulk semiconductor substrate with a second doping type, wherein the first doping type is different from the second doping type. There is no PN junction between the bulk semiconductor substrate and the first well region.

Abstract: A transistor structure includes a semiconductor body, a source region, a drain region and a gate region. The semiconductor body has a convex structure and the convex structure has at least four conductive channels extending upward. The source region contacts with a first end of the convex structure. The drain region contacts with a second end of the convex structure. The gate region has a gate conductive layer, wherein the gate conductive layer is across over the convex structure. Two or four conductive channels are not parallel to each other, and there is no shallow trench isolation region among the at least four conductive channels.

Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor island, a shallow trench isolation (STI) region, a first buried layer, and a second buried layer. The semiconductor substrate has an original surface. The semiconductor island is formed based on the semiconductor substrate. The shallow trench isolation (STI) region surrounds the semiconductor island. The first buried layer is a localized layer under the semiconductor island, wherein a material of the first buried layer is different from that of the semiconductor substrate. The second buried layer is a localized layer under the first buried layer, wherein a material of the second buried layer is different from that of the semiconductor substrate.

Abstract: Semiconductor circuit structures with direct die heat removal structure are provided. The semiconductor circuit structure comprises a semiconductor substrate with an original semiconductor surface; a set of active regions within the semiconductor substrate; and a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction. Wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2.

Abstract: A semiconductor package includes a processor die powered by either a front-side or a backside power delivery network, a plurality of memory dies and control dies stacked over the processor die, a plurality of high-thermal-conductivity interconnects located between and/or placed side-by-side with the dies, a substrate carrying all the dies with the substrate having a first cavity allowing a liquid to pass through, and a cold plate disposed over and in direct thermal contact with the top dies with the cold plate having a second cavity configured to connect to the first cavity and allowing the liquid to flow between the first and second cavities. This semiconductor package can be configured to go beyond the traditional single-sided interconnection and cooling topologies to enable dual- or multi-sided cooling, power supply, and signaling. The semiconductor package further includes an underground interconnection (UGI) disposed in a STI region of the processor die.

Abstract: A complementary metal-oxide-semiconductor (CMOS) circuit includes a bulk semiconductor substrate, a first active region and a second active region, a first type transistor, a first localized isolating layer, a second type transistor, and a second localized isolating layer. The bulk semiconductor substrate has an original semiconductor surface. The first active region and the second active region are formed based on the bulk semiconductor substrate. The first type transistor is formed based on the first active region and has a first doped body. The first localized isolating layer is under the first type transistor and at least isolates the first doped body from the bulk semiconductor substrate. The second type transistor is formed based on the second active region and has a second doped body. The second localized isolating layer is under the second type transistor and at least partially isolates the second doped body from the bulk semiconductor substrate.

Abstract: An integrated circuit includes a semiconductor substrate, a P type metal-oxide-semiconductor (PMOS) transistor, an N type guard ring, an N type metal-oxide-semiconductor (NMOS) transistor, a P type guard ring, and a first interconnection layer. The semiconductor substrate has an original surface. The P type metal-oxide-semiconductor (PMOS) transistor includes a gate node, a source node, and a drain node. The N type guard ring surrounds the PMOS transistor. The N type metal-oxide-semiconductor (NMOS) transistor includes a gate node, a source node, and a drain node. The P type guard ring surrounds the NMOS transistor. The first interconnection layer is under the original surface of the semiconductor substrate and isolated from the semiconductor substrate. The first interconnection layer is electrically connected to the PMOS transistor, the N type guard ring, the NMOS transistor, or the P type guard ring.

Abstract: A memory array circuit includes a semiconductor substrate, a bitline, a complementary bitline, and a bitline sense amplifier circuit, wherein the bitline sense amplifier circuit includes a first plurality of transistors and a first set of connection lines. The semiconductor substrate has an original surface. The bitline sense amplifier circuit is connected to the bitline and the complementary bitline. Each transistor includes a gate node, a first conductive node, and a second conductive node. The first set of connection lines connects the first conductive nodes of the first plurality of transistors to the bitline and the complementary bitline. The first set of connection lines are under the original surface of the semiconductor substrate.

Abstract: The present invention discloses a semiconductor circuit structure with underground interconnection lines within the semiconductor substrate for signal and power delivery.

Abstract: A transistor structure includes a body, a gate structure, a source region, and a drain region. The body has a single convex structure, wherein the convex structure is made of a first semiconductor material, and a trench is formed in the single convex structure. The gate structure has a gate conductive layer and a gate dielectric layer, wherein the gate conductive layer is across over the single convex structure, and a portion of the gate conductive layer is filled in the trench. The source region contacts with a first end of the single convex structure. The drain region contacts with a second end of the single convex structure. A ratio of ON current (Ion) to Off current (Ioff) of the transistor structure is not less than 106.

Abstract: A CMOS circuit includes a bulk semiconductor substrate, a first active region, a PMOS second active region, a (p-type Metal-Oxide-Semiconductor) transistor, a first localized isolating layer, an NMOS (n-type Metal-Oxide-Semiconductor) transistor formed in the second active region, and a second localized isolating layer. The bulk semiconductor substrate has an original semiconductor surface. The first active region and the second active region are formed based on the bulk semiconductor substrate. The PMOS transistor is formed in the first active region. The first localized isolating layer is under the PMOS transistor and at least partially isolates the PMOS transistor from the bulk semiconductor substrate. The NMOS transistor is formed in the second active region. The second localized isolating layer is under the NMOS transistor and at least partially isolates the NMOS transistor from the bulk semiconductor substrate.

Abstract: A transistor structure includes a body and a gate structure. The body has a single convex structure, wherein the convex structure is made of a first semiconductor material, and a trench is formed in the single convex structure. The gate structure has a gate conductive layer and a gate dielectric layer, wherein the gate conductive layer is across over the single convex structure, and a portion of the gate conductive layer is filled in the trench.

Abstract: A CMOS SRAM structure includes a Bulk semiconductor substrate with a PMOS active region and an NMOS active region. A set of PMOS transistors are formed in the PMOS active region and a set of NMOS transistors are formed in the NMOS active region. A VDD contacting line is electrically coupled to the set of PMOS transistors, a VSS contacting line is electrically coupled to the set of NMOS transistors, a word line is electrically coupled to the set of NMOS transistors, a bit line is electrically coupled to the set of NMOS transistors, and a complementary bit line is electrically coupled to the set of NMOS transistors. Wherein either the PMOS active region or the NMOS active region is a SOI region which is fully isolated from a rest portion of the Bulk semiconductor substrate which does not include the PMOS active region and the NMOS active region.

Abstract: The present invention discloses a planar CMOSFET structure used in the peripheral circuit of DRAM chip and in sense amplifiers of array core circuit of DRAM chip, the planar CMOSFET structure comprises a planar P type MOSFET with a first conductive region, a planar N type MOSFET with a second conductive region, and a cross-shape localized isolation region between the planar P type MOSFET and the planar N type MOSFET; wherein the cross-shape localized isolation region includes a horizontally extended isolation region contacts to a bottom side of the first conductive region and a bottom side of the second conductive region. The present invention could be similarly applied to the transistors for CMOS logic circuits as well.