Patents Assigned to Comlase AB
  • Method to obtain contamination free laser mirrors and passivation of these
    Patent number: 6812152
    Abstract: A method to obtain contamination free surfaces of a material chosen from the group comprising GaAs, GaAlAs, InGaAs, InGaAsP and InGaAs at crystal mirror facets for GaAs based laser cavities. The crystal mirrors facets are cleaved out exposed to an ambient atmosphere containing a material from the group comprising air, dry air, or dry nitrogen ambients. Any oxides and other foreign contaminants obtained during the ambient atmosphere exposure of the mirror facets are removed by dry etching in vacuum. Thereafter, a native nitride layer is grown on the mirror facets by treating them with nitrogen.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: November 2, 2004
    Assignee: Comlase AB
    Inventors: L. Karsten V. Lindström, N. Peter Blixt, Svante H. Söderholm, Anand Srinivasan, Carl-Fredrik Carlström
  • Method to GaAs based lasers and a GaAs based laser
    Patent number: 6803605
    Abstract: The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.
    Type: Grant
    Filed: August 15, 2002
    Date of Patent: October 12, 2004
    Assignee: Comlase AB
    Inventors: L. Karsten V. Lindstrom, N. Peter Blixt, Svante H. Soderholm, Lauerant Krummenacher, Christofer Silvenius, Anand Srinivasan, Carl-Fredrik Carlstrom
  • Method to GaAs based lasers and a GaAs based laser
    Patent number: 6734111
    Abstract: The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: May 11, 2004
    Assignee: Comlase AB
    Inventors: L. Karsten V. Lindström, N. Peter Blixt, Svante H. Söderholm, Lauerent Krummenacher, Christofer Silvenius, Anand Srinivasan, Carl-Fredrik Carlström