Abstract: A Method for manufacturing a transistor comprising: a) amorphization and doping, by means of one or more localised implantation(s), of given regions of source and drain blocks based on crystalline semi-conductor material lying on an insulating layer of a semi-conductor on insulator substrate, the implantation(s) being carried out so as to conserve at the surface of said blocks zones of crystalline semi-conductor material on the regions of amorphous semi-conductor material, b) recrystallization of at least one portion of said given regions.

Abstract: A method for producing a colored or fluorescent substrate with a view to formation of a colored or fluorescent image including the formation. The method defines on a substrate of a colored or fluorescent matrix, pixels of at least two different colors, wherein each pixel forms a filter for a given color. At least one filter is an interferential filter or a filter obtained with colored or fluorescent particles.

Abstract: An OFDM signal identification method in a received signal, wherein the received signal is sampled and cut off into blocks of P samples, each block being subjected to an inverse Fourier transform to obtain a plurality of symbols at a plurality of frequencies. For each frequency of the plurality, the kurtosis of the set of symbols thus obtained at this frequency is calculated, and then it is determined whether the kurtosis has a periodicity in frequency domain from kurtosis values calculated for the frequencies of the plurality, and the presence of an OFDM signal in the received signal is identified if the kurtosis has such a periodicity.

Abstract: The invention relates to a method for manufacturing transistors. Said method involves using a molecule including at least two 2-dicyanomethylene-3-cyano-2,5-dihydrofuran groups. The invention can be implemented in particular in the field of electronics.

Abstract: A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, which includes: a) polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, b) cleaning the surfaces to suppress presence of particles due to the polishing and the major portion of corrosion inhibitors, and c) putting both crystalline copper layer enriched in oxygen in contact with each other.

Abstract: A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

Abstract: A method for modifying crystalline structure of a copper element with a planar surface, including: a) producing a copper standard having large grains, wherein the standard includes a planar surface, b) reducing roughness of the planar surfaces to a roughness of less than 1 nm, c) cleaning the planar surfaces, d) bringing the two planar surfaces into contact, and e) annealing.

Abstract: The method comprises affixing a thin sheet of crystal (8) onto metal (6) of same type as the sheet but amorphous or of small grain size, deposited in trenches of a substrate (1) to form interconnect lines for example. Annealing progressively imposes the crystalline structure of the sheet onto the lines. When the crystal (8) is removed, highly conductive crystalline lines are obtained since the grains thereof have been greatly enlarged.

Abstract: A coupling structure for a resonant microgyroscope produced on a substrate, wherein the coupling structure enables a vibratory movement provided by an excitation mechanism to be detected along a first axis, and enables it to be transmitted to seismic masses lying in a plane containing the first axis. The coupling structure includes a closed assembly of beams connected to the seismic masses so as to be anchored only to the seismic masses, wherein the assembly is positioned to detect the vibratory movement provided by the excitation mechanism, and to transmit it to the seismic masses along at least a second axis contained in the plane, wherein the coupling structure has no point of anchorage to the substrate.