Abstract: The fabrication method comprises a step of exposing at least one organic diode to a gas, before packaging of the device, to form a plurality of randomly distributed black spots by impairment. Increasing the exposure time enables the size of the black spots to be increased, also randomly. The surface distribution of the black spots, visible by electroluminescence, enables an object associated with this distribution to be identified in reliable manner.

Abstract: A magnetic refrigeration device for cooling a thermal load including a magnetic screening cage containing means for generating at least one magnetic field, first and second elements made from magnetocaloric material placed fixedly in said magnetic field, thermal conductors connecting one of said elements made from magnetocaloric material to a cold source, and means for suspending elements made from magnetocaloric material. The second element made from magnetocaloric material is housed in a cavity delineated internally by the first element made from magnetocaloric material.

Abstract: Uniaxial deformation-measuring device includes a section of optical fiber equipped with a Bragg grating aligned with the measurement axis, and a test body subjected to the deformations to be measured., this device includes the fixing points for attaching the fiber to the test body. The fixing points are separated by a distance (Lfib) having a variation (?Lfib). When the test body is stressed by the deformation, the effective length (Lce) of the test body has an elongation (?Lce). The length (Lfib) of the section of optical fiber and the effective length (Lce) of the measurement body are such that the longitudinal deformation (?Lfib/Lfib) of the section of optical fiber is strictly greater than the originating deformation (?Lce/Lce) of the test body, thus defining an amplification factor K which is strictly greater than 1 and which is equal to the quotient (?Lfib/Lfib)/(?Lce/Lce) in the first order.

Abstract: This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E0 between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E0 being such that E0=?.

Abstract: A process for non coherent DP-MOK reception with combination of multiple paths and corresponding receiver. The process includes demodulation of orthogonal signals (MOK) which is combined with differential phase demodulation (DP) and diversity processing related to multiple paths in the radiofrequency channel. Diversity processing is achieved making use of differential demodulation by calculating a weighting factor, this factor then being used in the MOK part (before selecting and switching) and in the DP part to correct the calculated energy.

Abstract: The invention relates to a neutron absorbent material and a method of manufacturing such a material. The neutron absorbent material of the invention is a material having a high resistance to corrosion and high mechanical strength. This material is based on hafnium diboride and additionally comprises hafnium dioxide. The method of the invention enables one to reduce the sintering temperature of a composite material based on hafnium diboride. It includes a step that consists of mixing hafnium diboride and hafnium dioxide and a step of sintering the mixture obtained.

Abstract: A method for learning to classify data according to two distinct classes (c11, c12) separated by a separating surface (S), by means of a neurone of the binary type comprising a parameter describing the separating surface and whose inputs are weighted by a weight (wi), and including the following steps: a) defining a cost function C: C σ = ∑ μ = 1 ( γ μ > o ) P ⁢ [ A - B ⁢   ⁢ tanh ⁢   ⁢

Abstract: A process for obtaining at least one wafer of semiconducting material, including the step of cutting an ingot of semiconducting material along a longitudinal plane of the ingot to obtain a wafer with large dimensions. The wafer obtained may be used to make a Semiconductor on Insulator type substrate, for example a Silicon On Insulator substrate.

Abstract: A system for locating an object in latitude and longitude is disclosed. A rotating and oscillating mirror makes a laser beam deflect. A sensor fixed to the object indicates the locating instant. A screen that scatters and/or reflects towards a second sensor, on which are stretched reflecting and/or scattering cords, provides latitudinal and longitudinal position-identification of the deflection of the beam. The invention can be applied to robotics.

Abstract: A device for measuring electric fields mainly comprises a laser and a probe provided with a centrosymmetric polymer sheet permitting the generation, under the action of the field, of the second harmonic of the emitted wavelength. Optical fibers carry the incident and reflected waves of the laser to the probe and then to an optical measuring cascade. This device is of particular interest for measuring the electric fields between high voltage coaxial cables.