Abstract: The present invention relates to a method for manufacturing a heterogeneous material structure. The method includes forming a predetermined detachment area in a source substrate, and bonding the source substrate to a handle substrate to form a source-handle structure. The source-handle-structure is then annealed at a first energy level that is lower than the energy of a thermal detachment budget and stopping before detachment of the source substrate. Lastly, the source-handle-structure is annealed at a second energy level that is lower than the first energy level at least until the substrate detaches at the predetermined detachment area.
Type:
Grant
Filed:
December 10, 2003
Date of Patent:
August 30, 2005
Assignees:
S.O.I.Tec Silicon on Insulator Technologies S.A., Commisariat à l'énergie Atomique (CEA)
Inventors:
Cecile Berne, Bruno Ghyselen, Chrystelle Lagahe, Thibaut Maurice