Patents Assigned to COMMISS. A L'ENERGIE ATOM ET AUX ENERG ALTERNA
  • Publication number: 20110284870
    Abstract: A method for making a semiconducting structure, including: a) forming, on a surface of a final semiconductor substrate, a semiconducting layer, doped with elements from columns III and V of the Periodic Table so as to form a ground plane, b) forming a dielectric layer, c) then assembling, by direct adhesion of the source substrate, on the final substrate, the layer forming the ground plane between the final substrate and the source substrate, the dielectric layer being between the source substrate and the ground plane, d) then thinning the source substrate, leaving, on the surface of the semiconductor structure, a film made from a semiconducting material.
    Type: Application
    Filed: August 13, 2009
    Publication date: November 24, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Yannick Le Tiec, Francois Andrieu
  • Publication number: 20110266594
    Abstract: A method is disclosed, for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, comprising: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, the etching of the AlN layer.
    Type: Application
    Filed: April 29, 2011
    Publication date: November 3, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Marc Aid, Emmanuel Defay, Aude Lefevre, Guy-Michel Parat
  • Publication number: 20110248602
    Abstract: Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters. The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.
    Type: Application
    Filed: December 22, 2010
    Publication date: October 13, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA
    Inventors: Emmanuel DEFAY, Sebastien Boisseau, Ghislain Despesse, Brice Ivira, Alexandre Reinhardt
  • Publication number: 20110221015
    Abstract: A production method with release of movable mechanical parts of an electro-mechanical microsystem is disclosed. The method is characterized in that porous zones are formed on the front face of a first water of a semiconductor material. Patterns of a material able to constitute the movable mechanical parts of the electro-mechanical microsystem are then formed on the front face of the first water at the level of the porous zones and encapsulated in a sacrificial layer. Then a layer of a material withstanding an attack by a solvent of the sacrificial layer is deposited. The release of the movable mechanical parts is then executed by the rear face of the first water, through the porous zones, using a solvent of the sacrificial layer.
    Type: Application
    Filed: March 10, 2011
    Publication date: September 15, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA
    Inventors: Frederic-Xavier Gaillard, Fabrice Nemouchi
  • Publication number: 20110165441
    Abstract: A photovoltaic system including: one photovoltaic panel including a face configured to receive light rays, one battery mechanically connected to the photovoltaic panel by a retaining structure, and one space which is opened onto the environment external to the photovoltaic system forming an air layer separating the battery and the photovoltaic panel and including a thickness at least equal to approximately 1 cm. The ratio between the thickness of the photovoltaic system and a dimension of one side of the face of the photovoltaic panel is less than or equal to approximately 1/5.
    Type: Application
    Filed: September 9, 2009
    Publication date: July 7, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM.ET AUX ENERG. ALTERNA.
    Inventors: Sylvie Genies, Helene Rouault
  • Publication number: 20110147849
    Abstract: An integrated circuit including: a first transistor; a second transistor, arranged on the first transistor, whereof a channel region is formed in a semiconductor layer including two approximately parallel primary faces; a portion of an electrically conductive material electrically connected to a gate of the first transistor and arranged between the gate of the first transistor and the channel region of the second transistor; a dielectric layer arranged between the portion of the electrically conductive material and the channel region of the second transistor; and in which the section of the channel region of the second transistor is included in the section of the portion of the electrically conductive material, and the channel region of the second transistor is arranged between the portion of the electrically conductive material and a gate of the second transistor.
    Type: Application
    Filed: August 25, 2010
    Publication date: June 23, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Emmanuel AUGENDRE, Maud Vinet, Laurent Clavelier, Perrine Batude
  • Publication number: 20110128095
    Abstract: A resonant filter including a matrix of n×m resonators of N/MEMS type, each resonator including an actuating mechanism and a detection mechanism. An input of the filter, configured to receive an electrical input signal, is electrically connected to the resonator actuating mechanism. The outputs of the resonator detecting mechanism are electrically connected together and to an output of the filter, such that the signal to be obtained as an output of the filter is an image of the sum of the mechanical responses of the resonators. The resonators are not mechanically coupled together.
    Type: Application
    Filed: April 6, 2009
    Publication date: June 2, 2011
    Applicant: Commiss. A L' Energie Atom. Et Aux Energ. Alterna.
    Inventors: Chady Kharrat, Eric Colinet
  • Publication number: 20110104025
    Abstract: A microfluidic device, including a microfluidic network, including: a) two parallel plates each including one or more electrodes, b) at least one channel, arranged between the two plates, made from a material obtained by solidification or hardening of a material of a first fluid, and c) a mechanism varying a physical parameter of the material constituting walls of the channel so as to cause the material to pass at least from the liquid state to the solid state.
    Type: Application
    Filed: April 23, 2009
    Publication date: May 5, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM.ET AUX ENERG. ALTERNA.
    Inventor: Yves Fouillet
  • Publication number: 20110104829
    Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.
    Type: Application
    Filed: April 3, 2009
    Publication date: May 5, 2011
    Applicant: Commiss. A L'Energie Atom. ET Aux Energ. Alterna.
    Inventors: Jean-Sebastien Moulet, Lea Di Cioccio, Marion Migette
  • Publication number: 20110086461
    Abstract: A method for making an optical device with integrated optoelectronic components, including a) making a protective structure including a support in which at least one blind hole is made, an optical element being positioned in the blind hole, b) attaching the support to a substrate including the integrated optoelectronic components, the blind hole forming a cavity in which the optical element faces one of the optoelectronic components, c) achieving thinning of the substrate and making electric connections through the substrate, and d) making an aperture through the bottom wall of the blind hole, uncovering at least one portion of the optical field of the optical element.
    Type: Application
    Filed: May 19, 2009
    Publication date: April 14, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventor: Sebastien Bolis
  • Publication number: 20110079889
    Abstract: A structure comprising a cavity delimited by a first substrate and a second substrate attached to the first substrate by an adhesion interface, in which a first part of a first portion of a getter material forms part of the adhesion interface, and a second part of the first portion of getter material is placed in the cavity, the first portion of getter material being placed against the first substrate or the second substrate, the adhesion interface further comprising part of a second portion of a getter material thermocompressed to the first part of the first portion of getter material, said second portion of getter material being placed against the second substrate when the first portion of getter material is placed against the first substrate or placed against the first substrate when the first portion of getter material is placed against the second substrate.
    Type: Application
    Filed: October 6, 2010
    Publication date: April 7, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventor: Xavier BAILLIN
  • Publication number: 20110035168
    Abstract: A multi-carrier reflectometry device and method for on-line diagnosis of at least one transmission line. The device includes: a transmission part that includes successively: a module for parameterizing a test signal SF, such that: sF=[0, c1ej?1, c2ej?2, . . . , CN/2-1ej?N/2-1, CN/2, CN/2-1ej?N/2-1, cN/2-2ej?N/2-2, . . . , c1ej?1]T, a module for synthesising the test signal by inverse discrete Fourier transform, and a digital to analog converter, connected to the line; and a detection part that includes successively: an analog to digital converter connected to this transmission line, a discrete Fourier transform module, and an analysis module containing a deconvolution module, which also receives the test signal sF.
    Type: Application
    Filed: May 12, 2009
    Publication date: February 10, 2011
    Applicant: Commiss. A L'Energie Atom. Et Aux Energ. Alterna.
    Inventors: Adrien Lelong, Marc Olivas
  • Publication number: 20110033976
    Abstract: A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced.
    Type: Application
    Filed: April 7, 2009
    Publication date: February 10, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Lea Di Cioccio, Francois Grossi, Pierric Gueguen, Laurent Vandroux
  • Publication number: 20110018132
    Abstract: An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor.
    Type: Application
    Filed: January 23, 2009
    Publication date: January 27, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Alain Rey, Chrystel Deguet, Laurent Vandroux
  • Publication number: 20110003443
    Abstract: A method for producing a transistor with metallic source and drain including the steps of: a) producing a gate stack, b) producing two portions of a material capable of being selectively etched relative to a second dielectric material and arranged at the locations of the source and of the drain of the transistor, c) producing a second dielectric material-based layer covering the stack and the two portions of material, d) producing two holes in the second dielectric material-based layer forming accesses to the two portions of material, e) etching of said two portions of material, f) depositing a metallic material in the two formed cavities, and also including, between steps a) and b), a step of deposition of a barrier layer on the stack, against the lateral sides of the stack and against the face of the first dielectric material-based layer.
    Type: Application
    Filed: June 8, 2010
    Publication date: January 6, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Bernard Previtali, Thierry Poiroux, Maud Vinet
  • Publication number: 20100312939
    Abstract: An interconnection network with m first electronic circuits and n second electronic circuits, comprising m interconnection sub-networks, each comprising: one addressing bus and one information transfer bus connecting one of the m first circuits to all the n second circuits and comprising a plurality of electrically conducting wire segments connected to each other through signal repeater devices, means of controlling the repeater devices, capable of making at least one of the repeater devices active depending on the value of an addressing signal, the active repeater device forming a communication path in the information transfer bus for data signals between said one of the m first circuits and one of the n second circuits or between several of the n second circuits, where m and n are integer numbers greater than 1.
    Type: Application
    Filed: June 2, 2010
    Publication date: December 9, 2010
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventor: Francois JACQUET
  • Publication number: 20100266931
    Abstract: A device including a metal substrate and a ceramic substrate including a back-tapered groove separated from each other by a sealed flexible link. The link includes: a metal element including an end connected to the metal substrate and at another end housed in the groove of the ceramic substrate, the metal element being elastically deformable both in the groove along a direction radial to the groove and, in the separation space between the metal substrate and the ceramic substrate along the separation direction, and a joint-forming mass with a greater thermal expansion coefficient than that of the ceramic substrate and adhesively bonded to the end of the metal element housed in the back-tapered groove, the joint fitting with direct contact a portion of the height of convergent sidewalls of the groove.
    Type: Application
    Filed: December 22, 2008
    Publication date: October 21, 2010
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Magali Reytier, Philippe Bucci
  • Publication number: 20100244970
    Abstract: An atomic clock including a mechanism applying both a static magnetic field and two oscillating magnetic fields, all mutually perpendicular, in a magnetic shield. The amplitudes and frequencies of the oscillating magnetic fields may be chosen so as to annihilate energy variations between sub-transition levels of excited atoms and to reinforce a clock output signal, and with low sensitivity to defects in regulation.
    Type: Application
    Filed: December 10, 2008
    Publication date: September 30, 2010
    Applicant: COMMISS. A L'ENERGIE ATOM ET AUX ENERG ALTERNA
    Inventors: Matthieu Le Prado, Jean-Michel Leger