Abstract: A manufacturing method of a structure intended for assembly with another structure by self-aligning bonding by hydrophilic contrast, including the following successive steps: a) definition of pads on the side of the first face of a first substrate; b) transfer of a second substrate on the side of the first face of the first substrate; c) formation on the sides and/or on a peripheral part of the upper face of the pads, of a material more hydrophobic than a material of the upper face of the pads; and d) removal of the second substrate.

Abstract: A circuit for reading a programmed resistive state of resistive elements of a resistive memory, wherein each resistive element may be programmed to be in a first or a second resistive state, wherein the circuit includes a current integrator suitable for integrating a difference in current between a reading current flowing through a first of the resistive elements and a reference current.

Abstract: A method for thinning samples including the steps of: a) providing at least one sample having a front and a rear face, b) providing a frame substrate having a first face and a second face opposite the first, including a through-opening which opens into the first and second face, which is configured to receive the sample, c) positioning the sample so it is disposed in the through-opening, the front face being oriented to the same side as the first face, and d) thinning the frame substrate and the sample simultaneously from the first face and the front face, respectively, so that at the end of thinning, the faces extend substantially in the same plane, the thinning being carried out using a grinder, the frame substrate and the sample being disposed on a rotary disk held in place by aspiration, the flanks of the sample remaining free during the thinning.

Abstract: A process for fabricating a wafer of thickness, including at least (i) providing a monolithic substrate made of p-doped silicon; (ii) forming crystal defects in predefined portions of at least one of the sides of the substrate; (iii) subjecting the subject to a thermal anneal; (iv) bringing all or some of one of the sides of the substrate into contact with hydrogen; (v) if necessary, promoting the diffusion of the hydrogen; and (vi) subjecting the substrate to a heat treatment.