Patents Assigned to COMMISSARIAT A L'ENERGIE ATOMIOUE ET AUX ENERGIES ALTERNATIVES
  • Methods for in vitro investigating mitochondrial replication dysfunction in a biological sample, kits and uses thereof, therapeutic methods against progeroid-like syndromes or symptoms and screening method for identifying particular protease inhibitor(s) and/or nitroso-redox stress scavenger compound(s)
    Patent number: 11287433
    Abstract: The invention relates to a method for in vitro investigating mitochondrial replication dysfunction in a biological sample removed from a subject susceptible of suffering from physiological ageing or physiopathological conditions related to physiological ageing, or physiopathological ageing or associated symptoms or conditions, in particular premature ageing or accelerated ageing, or of a progeroid syndrome, such as Cockayne syndrome (CS), or neurodegenerative disorders or symptoms thereof, in which the levels of at least one species selected in the group of: POLG1 protein, POLG1 RNA, POLG2 protein, protease(s) which have POLG as a target, in particular serine protease(s) such as HTRA3 protein, HTRA2 protein and, HTRA3 RNA or HTRA2 RNA, or any combination of these species, are investigated.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: March 29, 2022
    Assignees: INSTITUT PASTEUR, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIOUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Laurent Arnaud Chatre, Miria Ricchetti, Alain Sarasin, Denis Biard
  • TRANSMISSION FOR CABLE CYLINDER WITH OFFSET NUT ANCHORAGE
    Publication number: 20220018424
    Abstract: An actuator (100) comprising: a frame (20); a screw (2) mounted on the frame; a nut (4) co-operating with the screw (2); a motor (3) arranged to drive the screw (2) in rotation; a first cable strand (6.1) and a second cable strand (9.1) coupled to the nut (4) and extending on a first side (8.1) of a first plane (P1); a third cable strand (6.4) and a fourth cable strand (9.4) coupled to the nut (4) and extending on a second side (8.2) of the first plane (P1); the first cable strand (6.1) and the second cable strand (9.1) extending in a second plane (P2); the third cable strand (6.4) and the fourth cable strand (9.4) extending in a third plane (P3); and the second plane (P2) and the third plane (P3) being distinct.
    Type: Application
    Filed: December 23, 2019
    Publication date: January 20, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIOUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Philippe GARREC, Benoit PEROCHON
  • Method for producing on the same transistors substrate having different characteristics
    Patent number: 10347545
    Abstract: There is provided a method for producing on a same substrate at least one first transistor and at least one second transistor that have different characteristics, the method including producing at least one first gate pattern and at least one second gate pattern on the substrate; depositing, on the first and the second gate patterns, at least: a first protective layer, and a second protective layer overlying the first protective layer and made of a material different from that of the first protective layer; masking of the second gate pattern by a masking layer; isotropic etching of the second protective layer; removing the masking layer; and anisotropic etching of the second protective layer selectively relative to the first protective layer.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: July 9, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIOUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Laurent Grenouillet, Sebastien Barnola, Marie-Anne Jaud, Jerome Mazurier, Nicolas Posseme