Abstract: A method and related device for measuring the profile of a surface of an object to be measured having zones made from at least two different materials, the object to be measured forming part of a plurality of substantially identical objects, the plurality of objects also including at least one reference object having at least one reference surface, the method including the following steps: determining a correction function, from a first profile signal of a first reference surface and a second profile signal from a second reference surface, the second reference surface being metallized; acquiring a profile signal from the surface of the object to be measured; and applying the correction function to the profile signal from the surface of the object to be measured to obtain a corrected profile signal; the profile signals being obtained from interferometric measurements.

Abstract: A method and device for digital data processing based on a data flow processing model is suitable for the execution, in a distributed manner on multiple calculation nodes, of multiple data processing operations modelled by directed graphs, where two different processing operations include at least one common calculation node. The device includes an identification processor configured to, from a valued directed multi-graph made up of the union of several distinct processing graphs and divided into several valued directed sub-multi-graphs, called chunks, and whose input and output nodes are buffer memory nodes of the multi-graph, identify a coordination module for each chunk. Furthermore each identified coordination module is configured to synchronize portions of processing operations that are to be executed in the chunk with which the respective coordination module is associated, independently of portions of processing operations that are to be executed in other chunks.

Abstract: To reduce degradation, by the LID effect, of the conversion efficiency of photovoltaic cells made of crystalline silicon, one or more steps of controlled introduction of voids into the silicon are carried out by one or more steps chosen from among: siliciding, nitriding, ion implantation, laser irradiation, mechanical bending stress applied on one face of the silicon substrate, in combination with a temperature promoting the formation of voids in the substrate. These voids make it possible to reduce the level of interstitial oxygen by an effect of diffusion of VO complexes and precipitation of oxygen. The introduction of voids has the other effect of reducing the level of autointerstitials, and therefore of limiting the formation of interstitial boron. The phenomena of LID by activation of BiOi2 complexes are thus limited. This applies notably to photovoltaic cells based on monocrystalline or polycrystalline silicon having a high concentration of boron and oxygen.

Abstract: A system for detecting an epileptic seizure in a prone person, comprising: at least one motion sensor with at least one measurement axis having fastening means for securing said motion sensor to said person; first means for determining a first probability of at least a first state transition diagram of the nocturnal activity of a prone person with respect to data representing the measurement signals of the motion sensor, said first diagram comprising predetermined probabilities of oriented transitions between two different or identical states, the probabilities of the states of said first diagram being predetermined; and second means for determining a second probability of at least a second state transition diagram for an epileptic seizure with respect to data representing the measurement signals of the motion sensor, said second diagram comprising predetermined probabilities of oriented transitions between two different or identical states, the probabilities of the states of said second diagram being pred

Abstract: A variable capacitance system including a first electrode, a second electrode, and a layer of elastically deformable dielectric material positioned between the first and the second electrode. An electret forms with the first electrode a first capacitor, and the electret forms with the second electrode a second capacitor. Capacitances of the first and second capacitors vary with deformation of the dielectric layer. The first electrode, the second electrode, and the first electret follow deformations of the dielectric layer and a deformation of the dielectric layer causes an inverse variation of capacitances of the first and of the second capacitor. The first electrode includes slots in which the electret is located, wherein the edge of the slots forms with the electret located inside the slots the first capacitor, wherein the electret is made on or in the dielectric layer.

Abstract: A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.