Abstract: The present invention relates to a metal-ion accumulator (A), comprising a stack of elementary electrochemical cells, each comprising a cathode (2), an anode (3), and a separator (1) impregnated with electrolyte intercalated between the anode and the cathode, each anode and cathode consisting of a substrate (2S, 3S) formed from a metal foil comprising a central portion (22, 32) supporting, on at least one of its main faces, a layer of active metal ion insertion material, the porosity of the layers of active material of the electrodes of one of the given polarities (anode or cathode) having at least two different values in the stack, the highest porosity being that of at least one electrode of said polarity, arranged between the center and the ends of the stack.

Abstract: A datum to be preloaded includes the acquisition of a, so-called “model”, statistical distribution of the deltas of a model access sequence, the construction of a, so-called “observed”, statistical distribution of the deltas of an observed access sequence, the identification in the observed statistical distribution, by comparing it with the model statistical distribution, of the most deficient class, that is to say of the class for which the difference NoDSM?NoDSO is maximal, where NoDSM and NoDSO are the numbers of occurrences of this class that are deduced, respectively, from the model statistical distribution and from the observed statistical distribution, the provision as prediction of the datum to be preloaded into the cache memory, of at least one predicted address where the datum to be preloaded is contained, this predicted address being constructed on the basis of the most deficient class identified.

Abstract: A thermoelectric device includes first and second legs extending continuously between first and second heat sources. The first and second legs respectively include first and second conducting elements and third and fourth conducting elements. The first and third conducting elements are adjacent and separated by an insulator. The second and fourth conducting elements are adjacent and separated by an insulator. The device also includes selection means enabling formation of a first thermocouple from the first and second conducting elements and formation of a second thermocouple from the third and fourth conducting elements.

Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.

Abstract: Method of diagnosis for a photovoltaic generator characterized in that it implements a step of observing the evolution of its voltage when it passes from a short-circuit mode of operation to an open-circuit mode or vice versa.

Abstract: The junction comprising a stack of at least two magnetic layers, a first layer, for example a soft magnetic layer with controllable magnetization, and a second layer, for example a hard magnetic layer with fixed magnetization, the magnetization of the soft layer being described by a uniform magnetic moment, the dynamic behavior of the junction being modeled by an equivalent electrical circuit comprising at least two coupled parts: a first part representing the stack of the layers, through which a current flows corresponding to the polarized current flowing through said layers whose resistance across its terminals depends on three voltages representing the three dimensions of the magnetic moment along three axes, modeling the tunnel effect; a second part representing the behavior of the magnetic moment, comprising three circuits each representing a dimension of the magnetic moment by the three voltages, each of the three voltages depending on the voltages in the other dimensions and on the voltage across the t