Patents Assigned to Commissariat A L'Energie Atomique Et Aux Energies Alternives
  • Uniaxially-strained FD-SOI finFET
    Patent number: 9252208
    Abstract: Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: February 2, 2016
    Assignees: STMicroelectronics, Inc., Commissariat A L'Energie Atomique Et Aux Energies Alternives, GlobalFoundries Inc.
    Inventors: Pierre Morin, Maud Vinet, Laurent Grenouillet, Ajey Poovannummoottil Jacob