Abstract: A method for forming a empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.
Type:
Application
Filed:
February 28, 2007
Publication date:
July 5, 2007
Applicants:
STMicroelectronics S.A., Commissariat A L'Ernergie Atomique
Inventors:
Philippe Coronel, Yves Laplanche, Laurent Pain
Abstract: A method for forming a empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.
Type:
Grant
Filed:
August 9, 2004
Date of Patent:
April 10, 2007
Assignees:
STMicroelectronics S.A., Commissariat a l'Ernergie, Atomique
Inventors:
Philippe Coronel, Yves Laplanche, Laurent Pain
Abstract: A method for forming a empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.
Type:
Application
Filed:
August 9, 2004
Publication date:
February 17, 2005
Applicants:
STMicroelectronics S.A., Commissariat A L'Ernergie Atomique
Inventors:
Philippe Coronel, Yves Laplanche, Laurent Pain