Abstract: A system for positioning and maintaining a position of a reference sensor around a magnetoencephalography helmet. The system includes an arch comprising at least one fixing branch for fixing the arch to an MEG helmet, a support plate on which the branch is fixed, a sensor support post fixed to the support plate of the arch; and a locking component for fixing the reference sensor to the post in at least one position defining the position with respect to an MEG helmet.

Abstract: The present description concerns an optical filter intended to be arranged in front of an image sensor comprising a plurality of pixels, the filter comprising, for each pixel, a resonant cavity comprising a first transparent layer, interposed between second and third mirror layers, and a diffraction grating formed in the first layer, wherein at least one of the cavities has a different thickness than another cavity.

Abstract: A method of designing/manufacturing a static-magnetic-field shimming coil system for magnetic resonance imaging, includes determining an optimal stream function, defined on a reference surface enclosing a region of interest, for each member of a cohort of magnetic resonance imaging subjects; performing a Principal Component Analysis of the stream functions; determining at least one coil wiring pattern defined on the reference surface by discretizing at least a most significant principal component of the stream functions. A static-magnetic-field shimming coil system suitable to be obtained by the method at least one hollow dielectric support element having a cavity containing the region of interest and a surface having a shape corresponding to the reference surface or, where appropriate, one the additional surface; and a set of conducting elements deposed on or affixed to the surface of the dielectric support, forming the or one the coil wiring pattern.

Abstract: A processing system for processing signals from a plurality of transducers of an ultrasonic sensor in order to determine characteristic information relating to an object detected by the ultrasonic sensor is provided. The system comprises a coupling device for transforming the signals received from the transducers into pulses, and a pulse processing unit for determining the characteristic information based on the pulses delivered by the coupling device. The coupling device comprises: a thresholding unit for applying, for each signal received from a transducer, thresholding to a signal derived from the signal received from the transducer and extracting directional information contained in the phase of the derived signal; a transformation unit for transforming the derived signal into pulses containing the phase of the signal, using the information extracted by the thresholding unit.

Abstract: An electromagnetic induction pump includes a tubular internal inductor having internal combs and internal coils between teeth of the internal combs. The inside of the internal inductor forms a cavity. An internal tube is positioned around the internal inductor. A pumping canal allows circulation of a fluid. The canal is between the internal tube and external tube. A tubular external inductor is positioned around the external tube and includes external combs and external coils positioned between teeth of the external combs. An electromagnetic pump includes a movement device for moving the internal combs, and varies the radial clearance between the internal combs and internal tube, having a first part positioned inside the internal inductor and in connection with the internal combs to move them radially, and a second part extending at least partially outside of the internal inductor and connected to the first part to control the first part.

Abstract: A device and a method for locking and/or unlocking a motor vehicle opening panel and vehicle having the device. The device includes a detection wall having an inner side and an opposite outer side, the outer side forming a contact detection region, and a detection component arranged against the inner side for detecting contact between a user's finger or hand and the outer side. The detection component includes a sensor having a layer of a piezoelectric material which has surface undulations in the form of ridges. The layer of piezoelectric material is configured to detect predetermined contact on the outer side with a view to controlling the locking or unlocking of the opening panel.

Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.

Abstract: A method for determining wavefront shapes of a multi-spectral signal light beam from a single signal image acquisition of said multi-spectral signal beam, with a device including an optical assembly made at least of an optical mask and an imaging sensor, notably a matrix imaging sensor, for generating and recording intensity patterns of incident beams, by having these beams reflect on, or propagate through, the optical mask. The optical mask having the optical properties: i) to cause the intensity pattern to depend on the wavefront shape, so that a tilt applied to the wavefront shape results in a displacement amount of the intensity pattern, and ii) to produce uncorrelated intensity patterns over at least one surface area A of the imaging sensor, for a plurality of respective incident monochrome beams of different wavelengths having a same wavefront shape.

Abstract: A method for manufacturing a single crystal may be by solution growth from a seed crystal, in a unit including a tank and a growth platform having a lower plate. The method may include: fastening the seed to the lower plate; introducing a crystallization solution of density dS into the tank; treating the solution in order to render it supersaturated; bringing the seed into contact with the supersaturated solution; rotating the platform until the single crystal is obtained. Before bringing the seed into contact with the supersaturated solution, the method may include forming, in the tank, of a zone for trapping parasitic crystals of density dC by introducing, into the tank, a liquid, immiscible with the growth solution, of density d>dS and d<dc, which forms with the growth solution an interface located below the lower plate.

Abstract: An electronic device for storing, controlling and manipulating electron or hole spin based semiconductor qubits, the device including an electrically insulating layer and on a front face of the insulating layer, a trapping structure for electrons or holes which includes: a channel portion including at least one layer portion of semiconductor material, as well as a plurality of gates distributed for trapping at least one electron or hole in the channel portion, and on the back side of the insulating layer, an electrical track extending parallel to the insulating layer, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure.

Abstract: A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level including vias, includes providing the first level and a dielectric layer, forming an etching mask on the dielectric layer, randomly depositing particles on the etching mask, and forming a lithographic layer having opening patterns. The mask layer is etched through opening patterns to form mask openings, then the dielectric layer is etched through the mask openings, so as to obtain functional via openings and degraded via openings. The via openings are filled so as to form the vias of the interconnection level, the vias including functional vias at the functional openings and malfunctional vias at the degraded openings.

Abstract: A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii) forming the second layer on the first layer. Advantageously, after formation of the stack, at least one curing annealing is carried out. The curing annealing may be such that the stack has, after annealing, a nominal defect rate less than at least 50% of an initial defect rate of the stack.

Abstract: An imaging device (100) configured to image a sample (102), comprising: a light source (104) emitting a light; a light deflection device configured to deflect the light emitted by the light source towards the sample, comprising a material portion (106) provided with a first main face (108) arranged opposite the sample (102), a second main face (110), and a first lateral face (112) towards which the light is emitted by the light source; an imager (118) having a detection face (122) arranged opposite the second main face and intended to receive the light backscattered by the sample; wherein one amongst the main faces is provided with oblique portions (114) each configured to deflect a portion of the received light towards the sample (102), and with planar portions (116) configured to let the light backscattered by the sample pass, and wherein each pixel (120) of the imager (118) is arranged opposite one of the planar portions (116) of said one amongst the first and second main faces (108, 110).

Abstract: A computer platform includes an artificial neural network (ANN) as well as a classifier. The ANN is configured, after a learning phase, to transform an input data vector into a discriminating feature vector having a smaller dimension. A user then generates, from a plurality of reference data vectors, the same plurality of reference feature vectors, which are encrypted in an encryption module using the public key of a homomorphic cryptosystem and stored in a reference database of the platform. When the user requests the classification of an input data vector, the ANN, or a copy thereof, provides the classifier with a corresponding discriminating feature vector (y). Distances from the vector to the different reference feature vectors are calculated in the homomorphic domain and the index of the reference feature vector closest to y, i.e. the identifier i0 of the class to which it belongs, is returned to the user.

Abstract: A method for determining the thermal donor concentration of a test sample made of a semiconductor material, includes providing a reference sample made of the same semiconductor material and having a known thermal donor concentration; measuring a photoluminescence signal of the reference sample for a photon energy comprised between 0.65 eV and 0.8 eV, the photoluminescence signal of the reference sample exhibiting an intensity peak in a photon energy range of 0.65 eV to 0.8 eV; determining, from the photoluminescence signal, an experimental relationship between the thermal donor concentration and a parameter representative of the intensity peak; measuring a photoluminescence signal of the test sample for at least one photon energy comprised between 0.65 eV and 0.8 eV; determining from the photoluminescence signal a specific value of the parameter; and determining the thermal donor concentration from the specific value of the parameter by using the experimental relationship.

Abstract: An interconnector for solar cell strings intended to form a photovoltaic module, the interconnector comprising at least one cell interconnecting strip extending beyond a cell located at the end of the string through an end, and at least one string interconnecting strip, a section of one from among the cell interconnecting strip and the string interconnecting strip has a substantially constant surface, and a variable shape between a first zone of a first thickness and a second zone of a second thickness, the second thickness being strictly less than the first thickness and the second thickness being strictly less than 50 ?m. Each second zone thus constitutes a resistance welding zone without loss in terms of conduction. Without extra thickness at the interconnections, the risk of the module breaking is limited.

Abstract: A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

Abstract: A method of performing magnetic resonance imaging of a body includes a) immerging the body in a static and substantially uniform magnetic field; b) exciting nuclear spins inside the body using at least one radio-frequency pulse; c) applying to the body a time-varying magnetic field gradient defining at least one trajectory (ST) in k-space and simultaneously acquiring samples of a magnetic resonance signal so as to perform a pseudo-random sampling (KS) of the k-space; and d) applying a sparsity-promoting nonlinear reconstruction algorithm for reconstructing a magnetic resonance image of the body; wherein, at least in a low-spatial frequency region of the k-space, the distance between any two adjacent points belonging to a same trajectory is lower than 1/FOV, FOV being the size of a field of view of the reconstructed image. A magnetic resonance imaging apparatus for carrying out such a method is also provided.

Abstract: A voltage divider circuit includes at least two FDSOI transistors (TP1, TP2) of a first type connected to a first supply potential and arranged in a current mirror structure, two FDSOI transistors (TN1, TN2) of a second type and an electrical load (R), the drain of a first—respectively second—transistor (TN1) of the second type being connected to the drain of a first—respectively second—transistor (TP1) of the first type, the drain of the first transistor of the second type being connected to the front-face gate of this same transistor, the front-face gates of the first and second transistors of the second type being connected to one another, the source of the first transistor of the second type being connected to a second supply potential and the load being placed between the source of the second transistor of the second type and the second supply potential.

Abstract: A method for forming a doped zone of a transistor includes providing a stack having at least one active layer made from a semiconductor material, and a transistor gate pattern having at least one lateral side, and modifying a portion of the active layer so as to form a modified portion made of a modified semiconductor material. The modified portion extends down to the at least one lateral side of the gate pattern, at the edge of a non-modified portion above which the gate pattern is located. The method also includes forming a spacer on the lateral side, removing the modified portion by selective etching of the modified semiconductor material with respect to the semiconductor material of the non-modified portion, so as to expose an edge of the non-modified portion, and forming the doped zone by epitaxy starting from the exposed edge.