Abstract: An image sensor including a plurality of pixels formed inside and on top of a semiconductor substrate, each pixel including: a photosensitive area formed in the semiconductor substrate; a peripheral insulating trench vertically extending in the semiconductor substrate from an upper surface of the semiconductor substrate and laterally delimiting the photosensitive area; a charge collection area; a transfer region located in the semiconductor substrate and vertically extending between the charge collection area and the photosensitive area; and a transfer gate vertically extending in the semiconductor substrate, from the upper surface of the semiconductor substrate and inside of the peripheral insulating trench, deeper than the charge collection area, wherein the transfer region is doped with a same first conductivity type as the photosensitive area and has a doping level lower than that of the photosensitive area.

Abstract: A memory device including, in a first metallization level: first electrical interconnection lines parallel to one another, metal portions parallel to one another and each electrically coupling two neighboring first electrical interconnection lines, and wherein a memory element of OxRAM or CBRAM type is arranged at each interface between one of the metal portions and one of the first electrical interconnection lines, and each memory element includes a first electrode arranged against said one of the first electrical interconnection lines, a second electrode arranged against said one of the metal portions, and a memory layer arranged between the first and second electrodes.

Abstract: The present description concerns a power converter (400) comprising: a switch (114) comprising first (114d) and second (114s) conduction terminals intended to receive a first AC voltage (Vds), a first circuit (402) for detecting a minimum value reached by the first voltage at each halfwave, and for averaging minimum values over a plurality of halfwaves, and a second circuit (404) for controlling the switch configured, according to the average of said values, to turn on the switch when the first voltage is substantially null.

Abstract: A method comprising the following steps: a) bonding a handle substrate including a base and raised elements to a substrate of interest including a support substrate covered with a thin film, the thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with the raised elements, b) performing an etching with the etchant to remove the material sensitive to the etchant present in the first areas, the second areas being protected during the etching, whereby the thin film is structured in the form of raised patterns, c) separating the handle substrate from the substrate of interest.

Abstract: The present description concerns a clock signal generation device (902) comprising: a microelectromechanical resonant element (504); and at least one nanoelectromechanical transduction element (512).

Abstract: A method of detection of particles of a first type, called first particles (P1), present in a liquid (L), the liquid also containing particles of a second type distinct from the first type, and called second particles (P2), the liquid (L) being placed in a fluidic chamber, the first particles (P1) each having a density distinct from that of the liquid (L) and from that of each of the second particles (P2), the fluidic chamber having a closed volume occupied entirely by the liquid (L), the detection being achieved by capturing images of the fluidic chamber.

Abstract: The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

Abstract: A pulsed generator of electrically charged particles includes a vacuum chamber; wherein the vacuum chamber is configured to maintain an internal operating pressure between 10-6 mbar and atmospheric pressure; the vacuum chamber is configured to accommodate a photocathode and an anode, the photocathode and the anode being separated by an adjustable distance less than or equal to 30 mm; the vacuum chamber includes a window enabling pulsed light to reach firstly a rear face of the photocathode; the anode is arranged downstream of the photocathode and has an orifice suitable for the passage of electrically charged particles; the generator of electrically charged particles includes a system to apply a difference in potential between the photocathode and the anode, the voltage being configured to accelerate the charged particles.

Abstract: A tandem photovoltaic structure including, from the rear face to the front face: a first SHJ solar cell comprising a first layer of P-type doped amorphous silicon and a substrate of N-type doped crystalline silicon, a junction layer, a second perovskite-type solar cell comprising an active layer and a second P-type layer, the junction layer being made of N-type TCO and being in direct contact either with the second P-type layer or with the first P-type layer, one amongst the first or second solar cell also comprising an N-type layer, the junction layer serving as an N-type layer in the other one amongst the first or second solar cell.

Abstract: The invention relates to the transmission and reception of non-binary error correcting code words. The transmission method includes a first modulation (56) which implements a set of q sequences comprising q?1 sequences of q?1 chips, each sequence being obtained by circular shifting of a basic pseudo-random sequence, and a partially invariant sequence, invariant to a predetermined subset of circular shifts. The first modulation (56) further implements an association between each code word symbol and a sequence of the set of sequences wherein said finite field GFq has a non-zero primitive element, the symbol zero being associated with said partially invariant sequence and a symbol equal to a power j of the primitive element, j being an integer comprised between 0 and q?2, being associated with a pseudo-random sequence determined by j circular shifts of the basic pseudo-random sequence.

Abstract: A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.

Abstract: A method of transferring a layer from a source substrate to a destination substrate, comprising the following steps: a) activating a bonding surface of said layer and a bonding surface of the destination substrate, by ion etching of said surfaces, or by sputtering of a bonding material onto said surfaces; and b) after step a), placing into contact the bonding surface of said layer with the bonding surface of the destination substrate, wherein, during step a), a masking ring covers a peripheral portion of the bonding surface of said layer, and/or a masking ring covers a peripheral portion of the bonding surface of the destination substrate; and wherein steps a) and b) are carried out under vacuum and with no rupture of vacuum between the two steps.

Abstract: The manufacture of a photovoltaic module includes providing a first layer having a skew shape, manufacturing a second layer having a skew shape, and then placing a stack further including photovoltaic cells and at least one encapsulating material in an assembly mold varying between a closure configuration delimiting a predetermined air gap and an opening configuration. In an assembly step, where the closure configuration of the assembly mold is adopted, the temperature within the stack is maintained at an operating temperature comprised between 70° C. and 180° C., and preferably between 80° C. and 150° C., during an assembly period adapted as a function of the at least one encapsulating material so that the at least one encapsulating material undergoes melting at least partially and to create an encapsulating assembly capable of adhering to the plurality of photovoltaic cells and to the first layer and/or to the second layer.

Abstract: Method for manufacturing a composite material comprising a polymer and nanomaterials, the method comprising the following steps: dissolution of the polymer in a first solvent, whereby a first solution is obtained, dispersion of the nanomaterials in a second solvent, different from the first solvent, whereby a second solution is obtained, mixing of the two solutions, whereby a third solution is obtained, heating of the third solution so as to evaporate the second solvent, whereby a final solution is obtained, deposition of the final solution on a substrate and evaporation of the first solvent, the second solvent having a boiling point lower by at least 30° C. than that of the first solvent, and the viscosity of the final solution being equal to some 10% of the viscosity of the first solution.

Abstract: The monitoring device is configured for monitoring a converter comprising a first and a second input terminals, two output terminals, a first filter branch connected between the input terminals, a second filter branch connected in parallel with the first branch, two switching branches connected in parallel with the second branch, each switching branch including two switching half-branches connected in series and in an intermediate point forming an output terminal. The monitoring device comprises a detection impedance configured for being connected between the first and the second branches, and a detection module configured for comparing the voltage across the detection impedance with a predefined threshold, then for generating a detection signal as soon as said voltage is greater than said threshold.

Abstract: The invention relates to a method for manufacturing an electric current sensor (SHE) comprising the following steps: a) providing a metal or metal alloy substrate (SBT), b) making a non-through cavity (CVT) in said substrate so that said cavity separates the substrate into two areas (Z1, Z2), c) producing a resistive element (ER) in said cavity (CVT) by additive manufacturing, d) annealing the resulting assembly, e) removing a part of the substrate (SBT) to leave only the resistive element (ER) between the two areas (Z1, Z2) of the substrate, and f) defining, within each area (Z1, Z2), a connection terminal (BCE1, BCE2) to obtain electrodes (PEL, DEL).

Abstract: A device for estimating a position of a radioactive source, comprising: a holder; and at least two radiation detectors configured to generate a detection signal, the device being such that, each detector being assigned a position, the detectors are placed around an iso-centroid of each position, i.e., a centroid of each position equally weighted. The device also includes processing circuitry configured to compute a centroid of each position weighted by the detection signal measured by each detector; and depending on the centroid, estimate a direction pointing toward the source, corresponding to a direction between the device and the source.

Abstract: A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

Abstract: Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.

Abstract: A method for optimizing energy consumption of a computing infrastructure comprising a plurality of compute nodes, each associated with a plurality of jobs. The method includes receiving an energy consumption reduction request comprising an energy consumption reduction objective; determining a set of jobs to be suspended; and sending, to a runtime environment of each compute node associated with a job comprised in the determined set of jobs, a suspension request comprising said job. Upon receiving the suspension request, the method includes suspending the job comprised in the received suspension request, the suspension being carried out via a set of non-native instructions implemented in the runtime environment of each compute node; and active waiting by the suspended job for a suspension stop message comprising said suspended job, the active waiting being carried out via a set of non-native instructions implemented in the runtime environment of each compute node.