Patents Assigned to Commissariat à l'Energie Atomique et aux Energies
  • Patent number: 9703137
    Abstract: The present invention involves a rear projection display screen, including: a transmissive diffuser; a liquid crystal layer arranged on the rear surface side of the diffuser; and on the side of a first surface of said layer, first and second alternated parallel conductive strips regularly distributed across the entire surface of the screen, the first strips being interconnected, and the second strips being interconnected without being connected to the first strips.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: July 11, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Umberto Rossini
  • Patent number: 9706575
    Abstract: The invention relates to a multiple access method to a frequency band of a communication channel of a communication network with carrier sensing and collision avoidance, said frequency band being broken down into a set of sub-bands (SB0, SB1, . . . , SBi, . . . , SBn) of the communication channel, characterized in that it comprises at a source node, after it has been detected that the communication channel is available, the transmission to a destination node of several request to send messages on the communication channel (RTS NS0, RTS NS1), each of said messages being sent on a sub-band of the communication channel.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: July 11, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Baher Mawlawi, Jean-Baptiste Dore, Jean-Marie Gorce
  • Patent number: 9701533
    Abstract: A packing structure including: a cap secured to at least one first substrate and forming at least one cavity between the cap and the first substrate; a layer of at least one first material permeable to a gas, arranged in the cap and/or in the first substrate and/or at the interface between the cap and the first substrate, and forming at least one part of a wall of the cavity; a portion of at least one second material non-permeable to said gas, the thickness of which is higher than or equal to that of the layer of the first material, and surrounding at least one first part of the layer of the first material forming said part of the wall of the cavity; an aperture passing through the cap or the first substrate and opening onto or into said part of the layer of the first material.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: July 11, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Stephane Nicolas
  • Publication number: 20170191466
    Abstract: This electrostatic converter comprises a rotor comprising at least one blade designed to receive an air flow; a stator comprising at least one electrode; a flexible membrane fitted on the blade, and comprising a counter-electrode, the electrode or the counter-electrode being coated with a dielectric material suitable to be polarized; the flexible membrane describing a trajectory when the rotor performs a rotation; the flexible membrane being configured to come into sliding contact with the stator on a first part of the trajectory, and configured to be at a distance from the stator on a second part of the trajectory so as to form a variable electric capacitance variable suitable to induce an electric current.
    Type: Application
    Filed: January 6, 2017
    Publication date: July 6, 2017
    Applicants: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITÉ GRENOBLE ALPES
    Inventors: Matthias PEREZ, Sébastien BOISSEAU, Jean-Luc REBOUD
  • Patent number: 9698289
    Abstract: A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: July 4, 2017
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Carole Braley, Frédéric Mazen
  • Patent number: 9698673
    Abstract: A method for controlling an electronic circuit by means of the first, second and third operating parameters, comprises: determining a range of variation of the third parameter for each value of the first parameter by varying the second parameter, said ranges being different; determining a target value of the third parameter; if the target value is within one of the ranges, operating the electronic circuit by setting the third parameter to the target value; and in the opposite case, selecting the two ranges framing the target value and operating the electronic circuit by consecutively bringing the third parameter into each one of the selected ranges.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: July 4, 2017
    Assignees: Commissariat à l'Energie Atomique et aux Energies Alternatives, Université de Montpellier
    Inventors: Yeter Akgul, Edith Beigne, Pascal Benoit, Suzanne Lesecq, Diego Puschini Pascual
  • Patent number: 9696432
    Abstract: The invention relates to a device for processing information delivered by a photon detector, comprising: an analogue circuit for generating a signal comprising a series of pulses, each pulse having an amplitude proportional to the energy freed by an interaction of a photon in the detector; an analogue circuit for determining the instant at which the amplitude of a pulse of the signal is maximal; and an element for capturing the value of the signal at said instant.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: July 4, 2017
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventor: Patrice Ouvrier Buffet
  • Patent number: 9696281
    Abstract: An inspection head of an eddy current non-destructive testing sensor with separate transmitting and receiving functions includes a support whereon is arranged at least one transmitting/receiving element. Each element includes a circuit transmitting a local electromagnetic field, by circulating a predefined alternating current in the circuit, and an electromagnetic receiver sensitive to the locally transmitted electromagnetic field. The transmitting circuit is a portion of conductive sheet extending over a layer of the support layer in a predefined main direction of flow of the alternating current. The electromagnetic receiver is disposed facing the transmitting circuit relative to an axis normal to the layer of the support on which the portion of sheet extends to have an electromagnetic detection axis orthogonal to this normal axis and orthogonal to the predefined main direction of flow of the alternating current in the portion of conductive sheet.
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: July 4, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Jean-Marc Decitre
  • Patent number: 9694941
    Abstract: A device for indicating the filling level of a container, including: a first mobile element located inside of the container and capable of moving along a wall of the container when the filling level of the container varies; an enclosure containing a liquid or a gel, located outside of the container on the side of said wall opposite to the first element; and a second mobile element located inside of the enclosure and plunged into said liquid or gel, the second element being magnetically coupled to the first element and being capable of moving in the enclosure along said wall by following the displacements of the first element.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: July 4, 2017
    Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives
    Inventors: Sébastien Boisseau, Ghislain Despesse, Jean-François Mainguet, Alexandre Paleologue
  • Patent number: 9689913
    Abstract: A method for measuring the changes of the electrical performance of an FDSOI transistor between a first and a second state of the transistor after an operating period t1, including the following steps: measurement of the transistor's capacities C1 and C2 respectively in the first and second states, according to a voltage VFG applied between the gate and the source and drain areas, determination, in relation to characteristic C1(VFG) varying between a maximum value Cmax and a minimum value Cmin, with three inflection points, of an ordinate value Cplat of C1(VFG) at the second inflection point of C1(VFG), and of two abscissa values VUpper(0) and VLower(0) of C1(VFG) according to equations VUpper(0)=C1?1((Cmax+Cplat)/2) and VLower(0)=C1?1((Cmin+Cplat)/2), determination, from characteristic C2(VFG), of two abscissa values VUpper(t1) and VLower(t1) of C2(VFG) according to equations VUpper(t1)=C2?1((Cmax+Cplat)/2) and VLower(t1)=C2?1((Cmin+Cplat)/2), determination of variations of defect densities ?Dit1, ?Dit2 b
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: June 27, 2017
    Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Xavier Garros, Laurent Brunet
  • Patent number: 9689994
    Abstract: A method correcting a measured spectrum of X radiation, according to a number of channels Nc, each channel i corresponding to an energy range between Ei and Ei+?Ei, including: determining function ?ti,j(k) determining size of temporal deviation ?t interval separating two interactions with energy Ei and Ej, stacking of which leads to a detected energy value Ek; determining, from the function ?ti,j(k), probability function Pi,j(k) that an event counted in a channel k corresponds to a stack of two interactions, respectively of energies Ei and Ej; determining, from the probability function Pi,j(k), a stack spectrum as a part of the measured spectrum that corresponds only to the stacks alone; and calculating or estimating at least a first corrected spectrum, by the difference between the measured spectrum and the stack spectrum.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: June 27, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Jean Rinkel, Andrea Brambilla, Jean-Marc Dinten, Florent Mougel
  • Publication number: 20170179954
    Abstract: The invention relates to a logic cell for an integrated circuit including at least one first variable-capacitance capacitor having first and second main electrodes separated by an insulating region, and a third control electrode capable of receiving a control voltage referenced to a reference node of the cell to vary the capacitance between the first and second main electrodes, the third electrode being coupled to a node of application of a first logic input signal of the cell, and the first and second electrodes being respectively coupled to a node of application of a cell power supply voltage and to a node for supplying a logic output signal of the cell.
    Type: Application
    Filed: December 16, 2016
    Publication date: June 22, 2017
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Hervé Fanet, Samer Houri, Gaël Pillonnet
  • Publication number: 20170179073
    Abstract: This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10?2 mbar.
    Type: Application
    Filed: December 22, 2016
    Publication date: June 22, 2017
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert MORICEAU, Frank FOURNEL, Christophe MORALES
  • Publication number: 20170179114
    Abstract: This method comprises the following steps: a) providing a first structure successively comprising a first substrate, a first electronic device, and a first dielectric layer; a second structure successively comprising a second substrate, an active layer, a second dielectric layer, and a polycrystalline semiconductor layer, the active layer being designed to form a second electronic device; b) bombarding the polycrystalline semiconductor layer by a beam of species configured to form an amorphous part and to preserve a superficial polycrystalline part; c) bonding the first and second structures; d) removing the second substrate of the second structure; e) introducing dopants into the amorphous part, through the exposed active layer; f) thermally activating the dopants by recrystallization of the amorphous part.
    Type: Application
    Filed: December 22, 2016
    Publication date: June 22, 2017
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Benoit MATHIEU, Claire FENOUILLET-BERANGER
  • Publication number: 20170178950
    Abstract: This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device, a dielectric layer, and a first semiconductor layer; b) providing a second structure successively including a substrate, an active layer, a dielectric layer, and a second semiconductor layer, the active layer being designed to form an electronic device; c) bonding the first and second structures by direct bonding between the first and second semiconductor layers so as to form a bonding interface; d) removing the substrate of the second structure so as to expose the active layer; e) introducing dopants into the first and second semiconductor layers so as to form a ground plane.
    Type: Application
    Filed: December 22, 2016
    Publication date: June 22, 2017
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Perrine BATUDE, Laurent BRUNET, Claire FENOUILLET-BERANGER, Frank FOURNEL
  • Publication number: 20170180056
    Abstract: An optical receiver adapted to convert a received optical signal into a phase change of a timing signal to generate a first modified timing signal and to generate a data signal by comparing the first modified timing signal with a reference signal.
    Type: Application
    Filed: December 16, 2016
    Publication date: June 22, 2017
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Robert Polster, Ivan Miro Panades, Yvain Thonnart
  • Patent number: 9685818
    Abstract: An electrochemical and photovoltaic secondary cell formed by an electrolyte provided between a first electrode and a second electrode, the second electrode including a layer based on a semi-conductor material configured to convert photons into electrons.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: June 20, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Steve Martin
  • Patent number: 9685222
    Abstract: Memory cell of the SRAM type, including storage transistors forming a memory point for storing a bit and a read port having at least one MOS transistor, a TFET transistor, a power terminal and a read bit line whereof a potential is designed to vary depending on the value of the stored bit, and such that: the gate of the MOS transistor is connected to the memory point, and the gate of the TFET transistor is able to receive a read command signal; a first electrode of the MOS transistor is connected to the power supply terminal; a second electrode of the MOS transistor is connected to a first electrode of the TFET transistor; a second electrode of the TFET transistor is connected to the read bit line.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: June 20, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Olivier Thomas, Costin Anghel, Adam Makosiej
  • Patent number: 9683788
    Abstract: A solar plant including a solar field for production of steam, a turbine using steam, and an excess steam storage and draw off system. The system includes a latent heat thermal storage module and a liquid displacement thermal storage module including a liquid volume and a steam blanket. The modules are connected together so that the steam produced passes through the steam blanket before passing through the latent heat module, condensing, to be injected in the liquid volume, the lower part of the liquid volume being connected to the solar field and to an outlet of the turbine to let in or return cold liquid. The liquid volume acts as a liquid displacement reservoir.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: June 20, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Marco Olcese
  • Patent number: 9677962
    Abstract: The invention relates to a pressure sensor including an electromagnetic resonator with waveguide having a dielectric material with a dielectric permittivity that varies with temperature. There is an excitation circuit configured to propagate an electromagnetic field through the resonator and a device for heating the resonator. There is also a device for detecting the electromagnetic resonant frequency of the resonator and a device for determining the pressure of the gas surrounding the sensor as a function of the detected resonant frequency of the resonator.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: June 13, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Denis Mercier