Abstract: Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.

Abstract: An antagonist antibody, or an antigen binding fragment thereof, binds both to human and macaque LILRB1 and/or LILRB2, and has diagnostic and therapeutic uses.

Abstract: A direct bonding method between two substrates includes the steps of: providing a first substrate and a second substrate respectively including a first hydrophilic bonding surface and a second hydrophilic bonding surface; depositing on the first and/or on the second hydrophilic bonding surface a basic solution consisting of strong base molecules and deionized water; drying the first and/or the second hydrophilic bonding surface until a concentration with between approximately 109 atom/cm2 and 1015 atom/cm2 of cations resulting from the strong base molecules on the first and/or on the second hydrophilic bonding surface; contacting the first and the second hydrophilic bonding surface so as to obtain a spontaneous direct bonding and an assembly of the first substrate with the second substrate including a direct bonding interface.

Abstract: A detecting device configured to detect chemical or biological species in a given environment, includes a matrix-array sensor formed from opto-mechanical discs that are optically and mechanically resonant, able to bind to species of the environment, and arranged in rows and columns. The opto-mechanical discs of a given row are optically coupled to the same optical waveguide. Actuating electrodes are provided in order to ensure the mechanical resonance of the opto-mechanical discs. One p-n junction is associated with each opto-mechanical disc, the junctions of a given column being electrically connected to the same biasing electrode, so as to block the flow through the corresponding opto-mechanical disc of a parasitic electrical current.

Abstract: A field effect transistor includes a substrate; a semiconductor structure formed on a main face of the substrate, the semiconductor structure including a channel area; a first electrode and a second electrode between which extends the channel area, the first electrode including a plurality of portions spaced apart from each other, each portion of the first electrode contributing to forming an elementary transistor referred to as island; connection tracks for electrically connecting the portions of the first electrode to one another; and in which each portion of the first electrode is connected to a connection track through a fuse area, each fuse area associated with the portion of the first electrode of an island being capable of being broken in such a way as to electrically insulate said island if it is defective.

Abstract: A virtual reality or augmented reality vision system including: a first emission module, emitting light in the visible range; a second emission module, emitting light in the infrared range; an infrared-sensitive photodetection module; and a micromirror array. Each micromirror is capable of assuming a first position and a second position. Each micromirror of the micromirror array is configured to, in its first position, receive light from the first emission module and reflect it along an axis of interest. Each micromirror of the micromirror array is configured to, in its second position, receive light from the second emission module and reflect it substantially along the axis of interest, and receive light propagating along the axis of interest and reflect it towards the photodetection module.

Abstract: The present invention relates to a method for depolymerising oxygenated polymer materials, in particular by nucleophilic catalysis and to the use of said method in the recycling of plastic materials and the preparation of aromatic and aliphatic compounds that can be used as fuel, synthesis intermediates, raw materials in the construction sector, and in the petrochemical, electrical, electronic, textile, aeronautical, pharmaceutical, cosmetic and agrochemical industry. The present invention also relates to a method for manufacturing fuels, electronic components, plastic polymers, rubber, medicines, vitamins, cosmetics, perfumes, food products, synthetic yarns and fibres, synthetic leathers, glues, pesticides, fertilisers comprising (i) a step of depolymerisation of oxygenated polymer materials according to the method of the invention and optionally (ii) a step of hydrolysis, and optionally (iii) a step of functionalisation and/or defunctionalisation.

Abstract: A method of fabricating a capacitor that includes: forming a three-dimensional structure over a substrate, the three-dimensional structure having a region with elongated pores extending towards the substrate from a top surface of the three-dimensional structure remote from the substrate or elongated columns extending away from the substrate towards the top surface of the three-dimensional structure remote from the substrate; forming a first electrode layer over a surface of the region of the three-dimensional structure, the first electrode conformal to the surface of the region; forming an intermediate layer over the first electrode layer; and forming a second electrode layer over the intermediate layer, the second electrode layer conformal to the intermediate layer, wherein forming the intermediate layer includes: forming a solid-state electrolyte layer partially conformal to the first electrode layer; and forming a dielectric layer conformal to the first electrode layer.

Abstract: A functional chip includes a substrate including a first face and a second face, the second face of the substrate forming the front face of the functional chip; a first oxide layer on the first face of the substrate; a second oxide layer on the first oxide layer; a first routing level formed on the surface of the second oxide layer in contact with the first oxide layer; a third oxide layer on the second oxide layer wherein a semiconductor component is inserted; a rear face formed by the surface of the third oxide layer opposite the second oxide layer, the rear face including superconductor routing tracks surrounded at least partially by one or more conductor routing tracks, the semiconductor component being connected to the superconductor routing tracks via superconductor vias and the conductor routing tracks of the rear face being connected to the routing level via conductor vias.

Abstract: A random number generator including at least one ring oscillator comprising at least one inverter formed by at least two FDSOI LVT transistors, one being of the NMOS type and the other one being of the PMOS type, and further including a circuit for applying voltages on rear gates of the transistors configured to bias the transistors in the FBB mode.

Abstract: The present invention relates to a method for estimating a distance between nodes of an LPWA network. First and second nodes, respectively, successively transmit a narrow band signal at a plurality of carrier frequencies to each other. The second and first nodes, respectively, receive the transmitted signals and demodulate them into baseband signals. Complex values representative of a forward-backward function of the transmission channel between two nodes are obtained from the baseband demodulated signals. These complex values are then provided to a previously supervisingly trained neural network, the neural network giving an estimation of the distance separating the first node and the second node. The present invention also relates to a method for estimating the position of a node in an LPWA network using the above-noted distance estimation method.

Abstract: A method for making a quantum device including: forming, over a semiconductor layer, a graphoepitaxy guide forming a cavity with a lateral dimension that is a multiple of a period of self-assembly of a di-block copolymer into lamellas; first deposition of the copolymer in the cavity; first self-assembly of the copolymer, forming a first alternating arrangement of first lamellas and of second lamellas; removal of the first lamellas; implantation of dopants in portions of the semiconductor layer previously covered with the first lamellas; removal of the second lamellas; second deposition of the copolymer in the cavity, over a gate material; second self-assembly of the copolymer, forming a second alternating arrangement of first and second lamellas; removal of the second lamellas; etching of portions of the gate material previously covered with the second lamellas.

Abstract: A selection circuit architecture makes it possible to perform upward and/or downward transitions in sets of sequences of slow and fast phases so as at the same time to solve the problems of inductive switching noise and the problems of currents in the supply rails. This solution has multiple advantages linked to the ease of implementation and flexibility of configurations that are possible for adapting to the specific constraints when designing the circuit.

Abstract: An actuator having a nut (4) co-operating with a screw (2); a first cable (6) coupled to the nut and functionally connected to an output (16, 17, 22.4) of the actuator (100); and a motor (3) arranged to drive the screw (2) in rotation. The actuator also has a mechanism (92) for comparing the actual position of the nut relative to the frame (10) with a theoretical position for the nut relative to the frame (10) in order to obtain a position deviation (?ang4, ?lin4) of the nut; and a mechanism (93) for determining a force applied to the output (22.4) of the cable actuator (100) as a function of the position deviation of the nut. Also disclosed is a method of measuring a force applied to an output (16, 17, 24.1) of an actuator (100), and to a method of determining prior loading (t6,9) of a cable actuator (100).

Abstract: A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate whose greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour deposition, including successive steps carried out in a reactor configured for MOCVD deposition of nucleation and growth. The nucleation step includes forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on the top face of the substrate and oxidising the metal of the metal nuclei, to form oxidised nuclei and ensure stabilisation of the nuclei. The growth step includes depositing a metal by MOCVD using the metalorganic precursor, to form non-contiguous nanostructures by growth of the oxidised nanostructures, and oxidising the deposited metal of the nanostructures formed in the nucleation to form oxidised nanostructures.

Abstract: A device for fabricating a crystalline conversion layer from a growth solution, has a first wall and a substrate defining between them a crystalline growth cavity; a device for inlet/outlet of the solution controlling, over time, at least the supply or extraction of the growth solution to and from the crystalline growth cavity; a heating device creating a temperature profile in the crystalline growth cavity, the substrate or the first wall; the temperature profile controlling a free formation of the crystalline conversion layer over a thickness of greater than 1 micrometer, in a direction mainly transverse to forming face; the whole of the thickness of the crystalline conversion layer being obtained by the free formation of the crystalline conversion layer.

Abstract: A method for producing a semiconductor substrate is provided, including: producing a superficial layer arranged on a buried dielectric layer and including a strained semiconductor region; producing an etching mask on the superficial layer, covering a part of the region; etching the superficial layer to a pattern of the mask, exposing a first lateral edge of a first strained semiconductor portion belonging to the part and contacting the dielectric layer; forming a mechanical barrier from a second portion of material belonging to the first portion, the second portion having a bottom surface contacting the dielectric layer and an upper surface contacting the mask, the barrier arranged against the part and bearing mechanically against the second portion, and removing the mask.

Abstract: A radiofrequency transmission/reception integrated circuit includes at least one radiofrequency signal amplifier (PA, LNA), the at least one amplifier being configured, in operational mode, so as to perform a function of amplifying a radiofrequency signal applied at input, wherein the amplifier is configured so as to perform an oscillator function in a self-test mode of the integrated circuit, to generate a radiofrequency signal on at least one of the input or the output of said amplifier. A self-test method for such an integrated circuit is also provided.

Abstract: A method is provided for estimating at least one characteristic of a signal received by a receiver, the signal having been transmitted in succession by a plurality of antennas in successive time segments, each segment being dedicated to one separate antenna, the signal being modulated into the form of pulses according to ultra-wideband modulation.

Abstract: A method for controlling a power supply device of an electrical system, the device including at least one separate power supply assembly per phase of the electrical system, each power supply assembly including at least one battery pack defined by a state parameter and provided with at least one battery to supply a control voltage to the phase to which it is connected, taking into account at least one setpoint value. The method includes executing at least one correction block receiving as input each setpoint value and the state parameter of each battery pack of the power supply assemblies of the system, and for each power supply assembly, the correction block is configured to determine a correction value to be applied directly or indirectly to its setpoint value.