Abstract: A diode including a vertical stack of first and second semiconductor regions having opposite conductivity types, and a first electrode for biasing its first region arranged in a trench extending from the surface of the second region opposite to the first region, the first electrode including, in top view, the following conductive elements: a polygonal ring; for each vertex of the polygonal ring, a first rectilinear bar extending between the vertex and the center of the ring, substantially along a direction running from the vertex to the center of the ring; and for each first bar, a plurality of second rectilinear bars extending from the first bar substantially parallel to the sides of the ring, starting from the vertex forming the origin of the first bar.