Abstract: The present description concerns a microelectromechanical sensor control method, including the steps of: exciting, with same first signal (FSL), a first resonant (206L) and at least one second resonant element (206R); and estimating a phase shift (??) between the first signal and a second signal (FSR) which is an image of vibrations of the second resonant element.

Abstract: A circuit, intended to be associated in series with a load to be powered including a first field-effect transistor; at least one second field-effect transistor, associated in parallel with the first transistor; and at least one sensor of information representative of a current transmitted to said load, the gate of the second transistor being coupled to an output of the sensor.

Abstract: A method for manufacturing a multilayer structure by direct bonding between a first substrate and a second substrate includes the steps of: a) providing a first substrate and a second substrate respectively including a first bonding surface and a second bonding surface, b) bringing the first bonding surface and the second bonding surface into contact so as to create a direct bonding interface between the first substrate and the second substrate, c) disposing at least the direct bonding interface in a basic environment, and d) applying a thermal treatment at a temperature of between 20° C. and 350° C. so as to obtain the multilayer structure.

Abstract: A method for manufacturing a multilayer structure by direct bonding between a first substrate and a second substrate, the method including the steps of: providing a first substrate and a second substrate respectively including a first bonding surface and a second bonding surface, contacting the first bonding surface and the second bonding surface so as to create a direct bonding interface between the first substrate and the second substrate, placing at least the direct bonding interface in a cationic aqueous solution including deionized water and cationic species originating from at least one element of the first and/or of the second column of the periodic table of elements, and applying a heat treatment at a temperature comprised between 20° C. and 350° C. so as to obtain the multilayer structure.

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: An image sensor including a plurality of photosites formed inside and on top of a semiconductor substrate, each photosite including: a first photosensitive area formed in the semiconductor substrate and adapted to capturing light in a first wavelength range; a second photosensitive area formed in the semiconductor substrate vertically in line with the first photosensitive area and adapted to capturing light in a second wavelength range, different from the first wavelength range; a first area of collection of charges photogenerated in the first and second photosensitive areas, arranged on the side of a surface of the substrate opposite to the first photosensitive area; a first transfer gate vertically extending from the first photosensitive area to said surface, adapted to transferring the charges photogenerated in the first photosensitive area to the second photosensitive area; and a second transfer gate, horizontally extending on said surface vertically in line with the second photosensitive area, adapted to

Abstract: A magnetic field sensor includes a first coil responsive to a first AC coil drive signal having a first frequency, a magnetic field sensing element responsive to a sensing element drive signal and configured to simultaneously detect a directly coupled magnetic field generated by the first coil and a reflected magnetic field generated by an eddy current induced in a conductive target by the first coil, the conductive target disposed proximate to the magnetic field sensing element, the magnetic field sensing element further configured to generate a magnetic field signal, a second coil responsive to a second AC coil drive signal having a second frequency that is the same as the first frequency and current sensing circuitry configured to measure a magnitude of the second AC coil drive signal that causes the magnetic field signal to be approximately zero.

Abstract: A static metal seal comprising an outer sealing layer, wherein the outer sealing layer comprises a textured surface that is configured to come into contact with the surfaces that are to be sealed, the textured surface comprising a network of depressions spaced apart from one another on the textured surface, wherein the depressions are blind, do not pass all the way through the outer sealing layer, and do not communicate with one another.

Abstract: A memory cell, includes first and second main terminals, an auxiliary terminal; M memristor(s) between the main terminals, M?1; M primary switch(es), each in parallel with a memristor; and a secondary switch between the second main terminal and the auxiliary terminal. It is configured for writing to at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other primary switch, closing the secondary switch and applying a corresponding programming voltage between the first main terminal and the auxiliary terminal; and for reading at least one memristor by opening each primary switch in parallel with the at least one memristor, closing each other possible primary switch, opening the secondary switch and measuring a corresponding electrical quantity between the main terminals.

Abstract: A detection system includes a readout substrate, at least one thermal detector associated with a reflector, and at least one compensation device including a compensation transducer in thermal contact with the readout substrate, arranged between the reflector and the readout substrate, and situated facing the reflector so as to be optically insensitive to the incident electromagnetic radiation.

Abstract: Electrical energy converter and associated system for converting electrical energy The invention relates to an electrical energy converter including an inverter (10) for obtaining alternative electrical energy from a DC electrical energy source. The inverter includes a switch (52) having first and second conduction terminals for receiving an AC voltage, the electrical energy converter being suitable for supplying an output electrical energy to a load (8). Said converter includes a capacitive circuit (14) with variable and controllable capacitance, connected between the inverter (10) and the load (8), the control of a modification of said capacitance making it possible to obtain a modification of an electrical output parameter of the converter.

Abstract: The present description concerns a method of manufacturing a microelectromechanical device, including the following successive steps: providing an SOI structure comprising a first semiconductor layer on an insulating layer; forming a second semiconductor layer by epitaxy on top of and in contact with the upper surface of the first semiconductor layer; transferring and bonding, by molecular bonding, a third semiconductor layer onto and in contact with the upper surface of the second semiconductor layer; and forming trenches vertically extending from the upper surface of the third semiconductor layer all the way to the upper surface of the insulating layer, said trenches laterally delimiting a mechanical element of the device.

Abstract: A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ2, with X, Y and Z = I, Br, and an FAC1 additive, the molar ratio of cesium to lead is between approximately 4 % and 22%, the molar ratio of FAC1 relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type CsxFA(1-x+w)Pb(IyBr(1-y))3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.

Abstract: The present disclosure concerns a method and a circuit for controlling first and second switches electrically in series, wherein one or a plurality of crossings of a voltage threshold by a voltage across the first switch cause a conductive state of the second switch.

Abstract: An event-driven sensor including: a pixel array; a column readout circuit coupled to column output lines of the pixel array, the column readout circuit including a plurality of column register cells; and a row readout circuit including a readout memory having a storage location corresponding to each pixel of the pixel array, the readout memory having sets of one or more row lines for writing to rows of memory locations of the readout memory, wherein each row output line of the pixel array is coupled, via a corresponding row line control circuit, to a corresponding one of the sets of one or more row lines of the readout memory.

Abstract: The invention relates to a system for recording a track comprising: a utensil comprising a tip and equipped with a magnetic object; a device for locating the magnetic object configured to determine an estimated reference position on a writing surface; and a matrix-array touch sensor configured to define a set of M pixels, among N pixels, at least partially encircling the estimated reference position, and to detect the contact of the tip on the writing surface on the basis of the electrical signals generated by said set of M pixels.

Abstract: Positive electrode material for a lithium battery comprises a lithiated metal layered oxide comprising metal elements arranged in layers of metal cations and lithium arranged in interlayers of lithium cations and, in part, in the layers of metal cations, the oxide has a stack arrangement 02 and corresponds to the formula (I): Li(a+b)NicMndCoeMfOg (I) wherein: *a represents the proportion of lithium in the interlayers, 0<a<1; *b represents the proportion of lithium in the layers of metal cations, 0<b<?; *c, d, e and f are between 0 and 1 and b+c+d+e+f=I; *1.9<g<2.1; *when f?0, M is one or more of Al, Fe, Ti, Cr, V, Cu, Mg, Zn, Na, K, Ca, Sc; wherein the oxide is coated with an oxide of the formula (II): MnhM?iO2 (M) wherein: *0<h?1.5, preferably h=1; *M? is one or more of Ni, Al, Fe, Ti, Cr, V, Cu, Mg, Zn, Na, K, Ca, Sc; *0?i?1.5.

Abstract: A backup cooling device intended for a hot isostatic press, the press comprising a compression chamber, a tank containing a gas and a first gas flow circuit for the gas to flow between the gas tank and the compression chamber. The backup cooling device comprises a tank containing a coolant equipped with a first heat exchanger for exchanging heat between the gas and the coolant, a coolant flow circuit forming a closed loop including the tank and a cooling circuit arranged around the compression chamber, a second gas flow circuit for the gas, extending from a connecting valve connecting it to the first gas flow circuit, and including the first heat exchanger, a control module (CMD) suitable for controlling the connecting valve so as to open it in the event of a malfunction of the hot isostatic press, and otherwise to close it.