Patents Assigned to Commissarist A L'Energie Atomique
  • Schottky power diode comprising a sicoi substrate and the method of producing one such diode
    Publication number: 20050161760
    Abstract: The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.
    Type: Application
    Filed: March 12, 2003
    Publication date: July 28, 2005
    Applicants: Commissarist A L'Energie Atomique, S.O.I TEC Silicon On Insulator Technologies
    Inventors: Francois Templier, Thierry Billon, Nicolas Daval