Abstract: A process for depositing amorphous or nanophase diamondlike carbon (DLC) and a-C:H carbon/hydrogen films with variable and controllable properties on the surface of a substrate is disclosed. The process utilizes a combined hydrocarbon ion beam and plasma-activated hydrocarbon gaseous radical flux produced by an end-Hall ion source to yield a film with good electron-emissivity characteristics or high hardness and good optical transparency, as desired. A second ion source providing a beam of argon ions above or together in nitrogen is optionally directed at the substrate for cleaning prior to deposition and for ion-assisted deposition during deposition or for doping.

Abstract: A cooled plasma source for producing ions by electrical discharge. A cooled plate is positioned in the chamber of the plasma source for blocking thermal radiation from an electron-emitting cathode. The presence of the cooled plate results in significantly decreased substrate temperatures, as compared to use of conventional plasma source apparatus. As a result, the cooled plasma source may be used for treatment of heat-sensitive plastic substrates.

Abstract: A grid assembly for ion beam sources includes grid structures that are etched from a semiconductor wafer using microelectronic fabrication techniques with the grid structures constrained in an aligned manner by a ceramic carrier having embedded electrically conductive pads for effecting electrical contact with the grid structures. The grid structures are fabricated by creating oxide and photoresist layers on a starting silicon wafer and exposing the photoresist through a mask carrying the aperture pattern. After the photoresist is developed, the oxide layer is etched to form openings therethrough and the silicon wafer is anisotropically etched from both sides with the etching proceeding anisotropically so that the {111} planes are etched to form the apertures in which the {111} planes face each other across the aperture with opposite {111} planes at a 90.degree. angle relative to one another to provide a plurality of apertures each defining a volume in the form of an inverted truncated 4-sided pyramid.

Abstract: A workpiece holder for semiconductor workpieces during treatment with a substantially cylindrical casing shaped like a hockey puck having an upper surface for receiving a workpiece, a lower surface, at least one bore between the surfaces for applying a vacuum and a hollow interior for a heat absorbing composition preferably one which melts above ambient temperature but below temperatures which might damage workpieces. Suitable compositions include Glauber's salt, and calcium chloride hexahydrate. In one embodiment, curved, substantially radially extending vanes are preferably provided in the interior space for causing radial flow when the casing is rotated or oscillated. In a second embodiment, a plurality of bores extend between a manifold which extends radially and a plurality of circumferential grooves.

Abstract: A method and apparatus for transporting workpieces during surface altering treatment in which each workpiece is mounted on a holder which moves along a guide slot forming a non-circular, closed path. A double sprocket chain extending along one side of the slot engages a gear of each workholder for moving the holders along the slot as the double chain is driven. A second chain on the other side of the slot also engages the gear to rotate the holders as they move along the slot. Links connect the holders and cover the portions of the slot not covered by the upper surfaces of the holders on which the workpieces rest. The workpieces are thus uniformly treated, for example, coated.