Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.

Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.

Abstract: To provide a microwave/milliwave band high-frequency pulse signal generating device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: A radiation type oscillator including a radiation type oscillator substrate including a microwave transistor for generating negative resistance by short-duration operation and a resonant cavity structure; a high-frequency pulse signal of an oscillation frequency/frequency bandwidth determined by negative resistance produced by the short-duration operation of the microwave transistor and the resonant cavity structure is generated as a transmitted RF signal and simultaneously radiated into space. The radiation type oscillator performs oscillating operation when a received RF signal that is a reflected wave of the transmitted RF signal from an object of detection enters the radiation type oscillator, an IF signal is acquired from an IF signal output terminal owing to homodyne mixing by the radiation type oscillator itself, and this is analyzed and processed to detect the object of detection.

Abstract: To provide a microwave/milliwave UWB pulse wireless communication device that enables realization of structural simplification, high performance, compact integration, easy design, low power consumption, and low cost.

Abstract: A baseband signal processing unit changes the collector current of a transistor (20) formed by a bias control circuit (7) in accordance with a baseband transmission signal input from a baseband signal input terminal (18), changing the drain bias of a high-frequency transistor (1) to realize frequency modulation by changing the oscillation frequency, and the radiation wave thereof forms a transmit RF signal, whereby the transmission operation is performed. On the other hand, the oscillation signal is synchronized with a frequency modulated RF signal that arrives from outside, the change in frequency caused by the frequency modulation is generated as a change in the drain bias of the high-frequency transistor (1), and reception operation is performed by taking out that change as a voltage amplitude change from the baseband signal output terminal (14). As a result, it is possible to provide a microwave/millimeter wave communication apparatus that is simple in structure, low cost, and low power consumption.