Abstract: An integrated semiconductor MEMS detector device includes a piezo-resistive detector located at a fixed end of a cantilever, a bi-layer resonance actuator including two thin layer materials having different thermal expansion coefficients, wherein one of the actuator layers serves as a heating element and the other serves as insulating layer between the heating element layer and the cantilever, and a sensing element located at the free end of the cantilever, which serves, dependent on the particular application, as a gravitational mass, an absorber of energy, a gas- or vapor-adsorber, etc. Registration of the resonance frequency of the free end of the cantilever is performed both before and after an interaction (e.g., exposure to energy, materials/mass changes due to chemical reactions or/and physical interactions, etc.