Abstract: Included are embodiments for self protection. At least one embodiment includes Self-protection Unit for protecting a signal that includes a first receiving component configured to receive data, the received data being received as at least one frame and a subframing component configured to subframe at least a portion of the received data, wherein subframing includes converting the at least one into a plurality of subframes. Some embodiments include a subframe interleaver component configured to interleave at least a portion of the subframes.

Abstract: Disclosed herein are various embodiments of collision avoidance systems and methods. One method embodiment, among others, comprises a client sending an end of transmission (EOT) request to an access point (AP), and responsive to the EOT request, the AP responding with an EOT frame.

Abstract: Systems and methods for facilitating communication between communication devices are provided. An exemplary method includes: sending an indication signal by a second communication device to a first communication device, the indication signal corresponding to a request to receive buffered data from the first communication device; and sending a data frame by the second communication device to the first communication device.

Abstract: Included are embodiments for protecting a Media Access Control (MAC) layer. At least one embodiment of a method includes receiving first data from a communications device, the first data being received via a wireless transmission, the first data including a first duration and associating a second duration with response data, the response data being configured to acknowledge receipt of the first data.

Abstract: An automatic quadrature phase compensation system comprises an on-chip analog phase sense circuit capable of detecting small differences in quadrature phase error and providing a corresponding DC voltage, a voltage-controlled or programmable phase delay circuit to implement quadrature phase error correction, and a feedback system or compensation engine used to process the sensed error voltage and apply a corresponding correction signal to the adjustable phase delay.

Abstract: An improved integrated bias reference provides a temperature and supply stable bias for devices such as radio frequency amplifiers with less complexity and expense than conventional bias references. The bias reference may be integrated onto a single GaAs die with other active circuitry such as an amplifier.

Abstract: In one embodiment, the invention includes first and second transmission lines fabricated in a redistribution layer over a semiconductor die. The first transmission line has a first distance from a first ground return path formed in a first metal level. The first transmission line has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line is affected by the distance between the first transmission line and the first ground return path. Similar to the first transmission line, the second transmission line has a second distance from a second ground return path formed in a second metal level. The second transmission line has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line is affected by the distance between the second transmission line and the second ground return path.

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of a first material at a first depth, where the first material impedes the diffusion of a base dopant. For example, the first material can be carbon and the base dopant can be boron. The first material also causes a change in band gap at the first depth in the base. According to this exemplary embodiment, the base further comprises a concentration of a second material, where the concentration of second material increases at the first depth so as to counteract the change in band gap. For example, the second material may be germanium. The concentration of the second material, for example, may increase at the first depth by amount required to cause a decrease in band gap to be substantially equal to the increase in band gap caused by concentration of the first material.

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exemplary embodiment, the base of the heterojunction bipolar transistor further comprises a concentration of a diffusion suppressant of a base dopant, where the concentration of the diffusion suppressant decreases between a third depth and a fourth depth so as to counteract a decrease in band gap in the base between the first depth and the second depth. For example, the diffusion suppressant can be carbon and the base dopant can be boron. For example, the concentration of diffusion suppressant may decrease between the third depth and fourth depth so as to counteract the decrease in band gap at approximately the second depth.

Abstract: In one disclosed embodiment, a number of parameter values for an RF MOSFET are received. Examples of parameter values are style, bulk contact, finger width, finger length, number of fingers, current, and slice parameter values. From the received parameter values, a number of parasitic values for a subcircuit model of the RF MOSFET are determined. For example, parasitic resistor values and parasitic capacitor values of the RF MOSFET are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the circuit comprising the RF MOSFET. An RF MOSFET layout is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the circuit comprising the RF MOSFET. As such, the parasitic values of the RF MOSFET have already been taken into account in the initial circuit simulation.

Abstract: A substrate has a top surface for receiving a semiconductor die. An antenna is patterned on the bottom surface of the substrate. The antenna is accessible by coupling it to a via and, through the via, to a substrate signal bond pad and a semiconductor die signal bond pad. In one embodiment, there is at least one via in the substrate. The at least one via provides an electrical connection between a signal bond pad of the semiconductor die and the printed circuit board. The at least one via provides an electrical connection between a substrate bond pad and the printed circuit board. The at least one via also provides an electrical connection between the signal bond pad of the semiconductor die and a land that is electrically connected to the printed circuit board.

Abstract: In one disclosed embodiment a layer is formed over a transistor gate and a field oxide region. For example, a polycrystalline silicon layer can be deposited over a PFET gate oxide and a silicon dioxide isolation region on the same chip. The layer is then doped over the transistor gate without doping the layer over the field oxide. A photoresist layer can be used as a barrier to implant doping, for example, to block N+ doping over the field oxide region. The entire layer is then doped, for example, with P type dopant after removal of the doping barrier. The second doping results in formation of a high resistivity resistor over the field oxide region, without affecting the transistor gate. Contact regions are then formed of a silicide, for example, for connecting the resistor to other devices.

Abstract: One disclosed embodiment comprises a substrate having a top surface for receiving two or more semiconductor dies. The disclosed embodiment further comprises a printed circuit board attached to a bottom surface of the substrate and at least one via in the substrate. The at least one via provides an electrical connection between a signal bond pad of a first semiconductor die and the printed circuit board. The at least one via provides an electrical connection between a first substrate bond pad and the printed circuit board. The first substrate bond pad is connected to the first signal bond pad of the first semiconductor die by a first signal bonding wire. The at least one via also provides an electrical connection between the first signal bond pad of the first semiconductor die and a first land that is electrically connected to the printed circuit board.

Abstract: In one disclosed embodiment, a collector is deposited and a base is grown on the collector, for example, by epitaxially depositing either silicon or silicon-germanium. An emitter is fabricated on the base followed by implant doping an extrinsic base region. For example, the extrinsic base region can be implant doped using boron. The extrinsic base region doping diffuses out during subsequent thermal processing steps in chip fabrication, creating an out diffusion region in the device, which can adversely affect various operating characteristics, such as parasitic capacitance and linearity. The out diffusion is controlled by counter doping the out diffusion region. For example, the counter doped region can be implant doped using arsenic or phosphorous. Also, for example, the counter doped region can be formed using tilt implanting or, alternatively, by implant doping the counter doped region and forming a spacer on the base prior to implanting the extrinsic base region.

Abstract: According to one exemplary embodiment, an integrated circuit chip comprises a first interconnect metal layer. The integrated circuit chip further comprises a first intermediate dielectric layer situated over the first interconnect metal layer. The integrated circuit chip further comprises a metal resistor situated over the first intermetallic dielectric layer and below a second intermetallic dielectric layer. The integrated circuit chip further comprises a second interconnect metal layer over the second intermetallic dielectric layer. The integrated circuit chip further comprises a first intermediate via connected to first terminal of the metal resistor, where the first intermediate via is further connected to a first metal segment patterned in the second interconnect metal layer.

Abstract: In an exemplary embodiment of the disclosed transformer, the transformer comprises a dielectric area. For example, the dielectric area can consist of three different dielectric layers. Also, by way of example, the dielectric area can comprise silicon dioxide or a low-k dielectric. According to the exemplary embodiment, the dielectric area is interspersed with a permeability conversion material. The permeability conversion material has a permeability higher than the permeability of the dielectric area. For example, the permeability conversion material can be nickel, iron, nickel-iron alloy, or magnetic oxide. The exemplary embodiment further comprises a first conductor and also a second conductor patterned into the dielectric area. The first and/or the second conductor can comprise copper, aluminum, or a copper-aluminum alloy. Each of the first and second conductors are made up of a number of turns which result in, respectively, the primary and secondary windings of the exemplary disclosed transformer.

Abstract: A communication system for monitoring and/or controlling communication parameters of a remote communication device. The communication system monitors a communication channel that is created between the remote communication device and controls the communication device by adjusting internal settings of the communication device that represent communication parameters. The communication device is communicatively coupled to a communication channel to carry out ongoing communications between the communication device and the communication channel. Further, a software module is associated with the communication device, and the software module accesses the internal settings of the communication device from a remote location via the communication channel and performs diagnostics such as monitoring, controlling, and configuring the communication device using the internal settings of the communication device.

Abstract: A power amplifier system is disclosed in which a power amplifier unit and a power amendment unit are provided. An operating voltage is applied to the power amplifier unit. The power management unit monitors the current drawn by the power amplifier unit and generates a control signal based upon the measured current. The operating voltage applied to the power amplifier unit is adjusted based upon the control signal.