Abstract: A lithographic process for forming a pattern in relief (20) on a mass (10) of polymeric material comprises the steps of: preparing the mass (10) of polymeric material and a die (12) having a surface region (14) facing towards the mass (10) of polymeric material and which reproduces in negative the pattern in relief (20); heating the die (12) and putting the mass (10) of polymeric material into contact with the die (12) in any temporal sequence, in such a way that the part of the mass (10) of polymeric material in contact with the surface zone (14) is subject to softening; and separating the die (12) from the mass (10) of polymeric material on the surface of which the pattern in relief (20) has been formed. The heating of at least one part of the die (12) is obtained by generation of thermal energy upon dissipation of another form of energy in at least one region (16) of the die (12).

Abstract: A method of identifying target analytes in a sample, particularly a biological sample, comprising the steps of putting a plurality of target analytes, bound to a common luminescent marker, in contact with a plurality of molecular probes immobilized on a support, each of said molecular probes being capable of complementary binding to a respective target analyte, if said target analyte is present in the sample, providing to said support an excitation radiation and detecting an emission radiation coming from said support as a result of at least one complementary binding event, characterized by the fact that: said support comprises a plurality of photonic crystal resonators, at least two of said resonators being characterized by different resonance wavelengths; each of said molecular probes being fixed to a respective resonator; and by the fact that the identification of at least one target analyte is carried out through the analysis of the total emission spectrum coming from said plurality of photonic crystal

Abstract: A method for the manufacture of a thin-film field-effect device comprising, on a mechanical support layer, source and drain electrodes (S, D), a layer of semiconductor material (SC) for the formation of a conduction channel, and a gate electrode (G) insulated from the channel region, is described. The method provides for the use of a mechanical support layer in the form of a film (INS) of flexible, electrically insulating material; for the formation of the source and drain electrodes (S, D) in accordance with a predetermined configuration on a first surface of the insulating film; and for the formation of the gate electrode (G) on the opposite surface of the insulating film (INS) in accordance with a predetermined configuration complementary with the configuration of the source and drain electrodes (S, D), that configuration being achieved by a lithographic technique by selective masking determined by the source and drain electrodes (S, D) which are formed on the first surface of the film (INS).