Abstract: The base region of the power stage and the horizontal isolation region of the integrated control circuit or collector region of a transistor of an integrated circuit consist of portions of an epitaxial layer with a first conductivity type grown in sequence on an underlying epitaxial layer with a second conductivity type opposite the first.
Type:
Grant
Filed:
April 16, 1992
Date of Patent:
July 11, 1995
Assignee:
Consorzio per la Ricera Sulla Microelettronica Nel Mezzogiorno