Abstract: A transistor threshold extraction circuit having an output and including a first and a second transistor of the same type each having a control terminal and having essentially the same threshold voltage, the control terminal of the first transistor being connected to a constant potential node, a current mirror having at least one input terminal and one output terminal coupled respectively to said first and second transistors to provide bias currents, a first and a second potential reference, and a voltage divider having an intermediate tap and first and second end terminals. The control terminal of the second transistor is coupled to the intermediate tap and the divider is biased by coupling the first and the second end terminals respectively to the first and second potential references. The output is coupled to one of said end terminals.

Abstract: A monolithic semiconductor device having an edge structure that facilitates integrating high power devices an logic devices on the same substrate. The semiconductor device includes on a substrate of a first type of doping, a control region of a second type of doping, which is provided with an edge region, and a power region of a second type of doping. In the edge region, at least one channel is provided which is adapted to divide the edge region into regions that are electrically isolated from each other, the region at the channel being covered with a field plate. A method for producing such an edge structure in combination with the production execution of the monolithic device is also disclosed herein.

Abstract: A protection circuit for at least one power transistor which has at least one control terminal and two main conduction terminals defining a main conduction path includes a first detection means designed to generate a first electrical signal approximately proportional to current flowing in the main conduction path. Second detection means are designed to generate a second electrical signal approximately proportional to voltage across the main conduction path. Multiplying means receive at input the first and second signals and are designed to generate an electrical product signal substantially corresponding to the product of at least the latter. A generator generates an electrical reference signal, and operational amplifier means receive at input the product signal and the reference signal and are designed to generate an electrical difference signal substantially corresponding to their difference.