Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A method and corresponding apparatus for providing a cellular subscriber with access to a WLAN are provided. They involve identifying a multimode mobile terminal, which corresponds to the subscriber and the WLAN from an access request. Based on the identification, the WLAN is authorized to provide the mobile terminal with access. The mobile terminal is then provided with access to the WLAN as a cellular subscriber and enables interoperability between the two networks. For example, the subscriber does not have to supply a credit card to pay for WLAN access directly. Instead, the subscriber pays a cellular network provider, and, in turn, the cellular network provider pays a WLAN provider for the access.

Abstract: A non-volatile memory device using existing row decoding circuitry to selectively provide a global erase voltage to at least one selected memory block in order to facilitate erasing of all the non-volatile memory cells of the at least one selected memory block. More specifically, the erase voltage is coupled to the cell body or substrate of memory cells of the at least one selected memory block, where the cell body is electrically isolated from the cell body of non-volatile memory cells in at least one other memory block. By integrating the erase voltage path with the existing row decoding circuitry used to drive row signals for a selected memory block, no additional decoding logic or circuitry is required for providing the erase voltage to the at least one selected memory block.

Abstract: A system and method of performing off chip drive (OCD) and on-die termination (ODT) are provided. A common pull-up network composed of transistors and a common pull-down network composed of transistors are employed to implement both of these functions. In drive mode, the pull-up network is configured to produce a calibrated drive impedance when an “on” output is to be generated, and the pull-up network is configured to produce a calibrated drive impedance when an “off” output is to be generated. In termination mode, the pull-up network and the pull-down network are configured to produce a calibrated pull-up resistance and pull-down resistance respectively such that together, they form a split termination.

Abstract: A method includes receiving an Orthogonal Frequency Division Multiplexing (OFDM) signal comprising a plurality of Doppler-shifted OFDM subcarriers and determining frequency-shift data corresponding to the plurality of Doppler-shifted OFDM subcarriers. The determining includes calculating frequency-shift data for each Doppler-shifted OFDM subcarrier of the plurality of Doppler-shifted OFDM subcarriers, thereby yielding a plurality of subcarrier-specific frequency-shift values and calculating an average of the plurality of subcarrier-specific frequency-shift values. The method further includes frequency shifting each subcarrier of the plurality of Doppler-shifted OFDM subcarriers by a value based on the determined frequency-shift data multiplied by a frequency index of each subcarrier.

Abstract: A memory device of the non-volatile type including a memory array having a plurality of memory cells organized as sectors, each sector having a main word line associated with a plurality of local word lines, each local word line coupled to the main word line by a respective local word line driver circuit, each of the local word line driver circuits consisting of a first MOS transistor coupled between the respective main word line and a respective local word line and a second MOS transistor coupled between the respective local word line and a first biasing terminal.

Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.

Abstract: In one embodiment, a method is performed by a wireless station. The method includes receiving from an access point (AP) a request for measurement of at least one link-quality parameter. The method further includes measuring the at least one link-quality parameter to generate a link-quality-parameter measurement. The method also includes determining, for the wireless station, an appropriate wireless-station category of a plurality of wireless-station categories. The plurality of wireless-station categories are defined based at least in part on the link-quality-parameter measurement. In addition, the method includes communicating with the AP in accordance with a transmission schedule corresponding to the plurality of wireless-station categories.

Abstract: Systems and methods manage power in an integrated circuit using power islands. The integrated circuit includes a plurality of power islands wherein a power consumption of each power island within the plurality of power islands is independently controlled within said each power island. A power manager determines a target power level for one power island of the plurality of power islands. The power manager then determines an action to change a consumption power level of said one power island of the plurality of power islands to the target power level. The power manager performs the action to change the consumption power level of said one power island of the plurality of power islands to the target power level.

Abstract: A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.

Abstract: Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.

Abstract: A system and method of performing off chip drive (OCD) and on-die termination (ODT) are provided. A common pull-up network composed of transistors and a common pull-down network composed of transistors are employed to implement both of these functions. In drive mode, the pull-up network is configured to produce a calibrated drive impedance when an “on” output is to be generated, and the pull-up network is configured to produce a calibrated drive impedance when an “off” output is to be generated. In termination mode, the pull-up network and the pull-down network are configured to produce a calibrated pull-up resistance and pull-down resistance respectively such that together, they form a split termination.

Abstract: In one embodiment, a method is performed by a wireless station. The method includes determining that a wireless network provides relay service. The wireless network includes an access point and one or more relay nodes. The method further includes transmitting a relay-service desirability indication to the access point. The method also includes receiving a relay-service confirmation from the access point. The wireless station is operable to transmit at a first station-transmission power level during a first time period and a second station-transmission power level during a second time period. The second station-transmission power level is a reduced station-transmission power level as compared to the first station-transmission power level. In addition, the method includes transmitting an uplink transmission at the second station-transmission power level responsive to the relay-service confirmation from the access point.

Abstract: A method includes receiving an Orthogonal Frequency Division Multiplexing (OFDM) signal comprising a plurality of Doppler-shifted OFDM subcarriers and determining frequency-shift data corresponding to the plurality of Doppler-shifted OFDM subcarriers. The determining includes calculating frequency-shift data for each Doppler-shifted OFDM subcarrier of the plurality of Doppler-shifted OFDM subcarriers, thereby yielding a plurality of subcarrier-specific frequency-shift values and calculating an average of the plurality of subcarrier-specific frequency-shift values. The method further includes frequency shifting each subcarrier of the plurality of Doppler-shifted OFDM subcarriers by a value based on the determined frequency-shift data multiplied by a frequency index of each subcarrier.

Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.

Abstract: A memory device of the non-volatile type including a memory array having a plurality of memory cells organized as sectors, each sector having a main word line associated with a plurality of local word lines, each local word line coupled to the main word line by a respective local word line driver circuit, each of the local word line driver circuits consisting of a first MOS transistor coupled between the respective main word line and a respective local word line and a second MOS transistor coupled between the respective local word line and a first biasing terminal.

Abstract: A three-dimensional integrated circuit non-volatile memory array includes a memory array of vertical channel NAND flash strings connected between a substrate source line and upper layer connection lines which each include n-type drain regions and p-type body line contact regions alternately disposed on each side of undoped or lightly doped string body regions so that each NAND flash string includes a vertical string body portion connected to a horizontal string body portion formed from the string body regions of the upper body connection lines.

Abstract: A transistor of a semiconductor memory device including a semiconductor substrate having a plurality of active regions and a device isolation region, a plurality of first and second trench device isolation layers, which are arranged alternately with each other on the device isolation region of the semiconductor substrate, the first trench device isolation layers having a first thickness corresponding to a relatively high step height, and the second trench device isolation layers having a second thickness corresponding to a relatively low step height, a recess region formed in each of the active regions by a predetermined depth to have a stepped profile at a boundary portion thereof, the recess region having a height higher than that of the second trench device isolation layers to have an upwardly protruded portion between adjacent two second trench device isolation layers, a gate insulation layer, and a plurality of gate stacks formed on the gate insulation layer to overlap with the stepped profile of the res

Abstract: A semiconductor memory device includes: a variable delay for delaying a delay locked loop (DLL) clock by a predetermined delay time to output a delayed DLL clock; an output driver for outputting data and data strobe signal in response to the delayed DLL clock; and a calibration controller for controlling the predetermined delay time of the variable delay in response to output AC parameters.

Abstract: A leakage manager system for adequately minimizing static leakage of an integrated circuit is disclosed. The leakage manager system includes a generator configured to generate a control signal to be applied to a sleep transistor. A monitor is configured to determine whether to adjust the control signal to adequately minimize the static leakage. In some embodiments, the monitor includes an emulated sleep transistor. A regulator is configured to adjust the control signal depending on the determination.