Abstract: The present invention relates to a semiconductor heat treatment member for holding a semiconductor wafer, including a base member a surface of which is covered with an oxide film, the base member including a silicon carbide, in which a surface of a wafer holding portion to be in contact with a semiconductor wafer has an arithmetic average roughness Ra of smaller than or equal to 0.3 ?m and an element average length RSm of shorter than or equal to 40 ?m.
Abstract: An alumina sintered body having a low dielectric loss tangent and a method for manufacturing the alumina sintered body are provided. An alumina sintered body contains Al2O3 99.50 mass % or more, and 99.95 mass % or less and sodium and silicon, wherein at a surface layer A in any given cross-section and a central portion B of the cross-section in a depth direction from the surface layer A, a concentration ratio of sodium to silicon in the surface layer A is smaller than the concentration ratio of sodium to silicon at the central portion B.