Patents Assigned to Core Precision Material Co., Ltd.
  • Patent number: 8444793
    Abstract: The present invention provides a semiconductor device and a fabricating method thereof. The fabricating method comprises: providing a first substrate; forming a soft dry film having an adhesive film and a release film; sticking the soft dry film on the first substrate with the adhesive film; removing the release film; sticking a second substrate on the adhesive film; and heating the adhesive film to solidify the adhesive film to form a solid adhesive film. The semiconductor device comprises: a first substrate, a solid adhesive film, and a second substrate. The solid adhesive film is formed on the first substrate, and the second substrate is formed on the solid adhesive film.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: May 21, 2013
    Assignees: Himax Semiconductor, Inc., Core Precision Material Co., Ltd.
    Inventors: Hsin-Chang Hsiung, Shu-Lin Ho