Abstract: A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value.

Abstract: A heat sink for a semiconductor chip device includes cavities in a lower surface thereof for receiving electrical components on a top surface of the semiconductor chip, and a pedestal extending through an opening in the semiconductor chip for contacting electrical components on a bottom surface of the semiconductor chip. A lid may also be provided on the bottom surface of the semiconductor chip for protecting the electrical components and for heat sinking the electrical components to an adjacent device or printed circuit board.

Abstract: An optical modulator apparatus may include a plurality of segment drivers, each segment driver having a unique offset voltage and driving but a portion or a segment of an electro-optical modulator. A modulating electrical signal may be applied to the segment drivers via a plurality of electrical delays. Parameters of the segment drivers may be selected so as to approximate a pre-defined transfer function, which may include a linear or a non-linear transfer function.

Abstract: An optical device that includes means for thermal stabilization and control is described. The optical device can be a ring resonator, or another device that requires accurate control of the phase of the optical signal. In an example involving an optical resonator, a thermal stabilization system includes a temperature sensor, a control circuit, and a heater local to the resonator. The temperature sensor can be a bandgap temperature sensor formed of a pair of matched p/n junctions biased in operation at different junction currents.

Abstract: A photonic interface for an electronic circuit is disclosed. The photonic interface includes a photonic integrated circuit having a modulator and a photodetector, and an optical fiber or fibers for optical communication with another optical circuit. A modulator driver chip may be mounted directly on the photonic integrated circuit. The optical fibers may be placed in v-grooves of a fiber support, which may include at least one lithographically defined alignment feature for optical alignment to the silicon photonic circuit.

Abstract: A low loss high extinction ratio on-chip polarizer has at bi-layer optical taper with an input port of width W1 that communicates with a mode squeezer, followed by an S-bend (or dump bend), and finally a taper having an output port of width W1. The illumination that passes through the low loss high extinction ratio on-chip polarizer has a TM0 mode converted to a TE1 mode which is lost in the mode squeezer and S-bend section, while an input TE0 mode is delivered at the output as a substantially pure TE0 signal of nearly undiminished intensity.

Abstract: A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10?9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract: A transmitter comprising a plurality of modulator and multiplexer (Mod-MUX) units, each Mod-MUX unit operating at an optical wavelength different from the other Mod-MUX units. The transmitter can additional include in each Mod-MUX unit two optical taps and three photodetectors that are configured to allow the respective Mod-MUX unit to be tuned to achieve thermal stabilization and achieve effective modulation and WDM operation across a range of temperatures. The Mod-MUX transmitter avoids the use of a frequency comb. The Mod-MUX transmitter avoids cross-modulation between different modulators for different laser signals.

Abstract: A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 ?m×2 ?m, orders of magnitude smaller than MMI and directional couplers.

Abstract: A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low V?L product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive V?L figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

Abstract: We have demonstrated a novel Sagnac loop and micro-ring based laser cavity which is simple and reliable, with accurately controlled reflectivity and negligible excess loss. The resonant wavelength of a 2 ?m radius micro-ring is shown to be lithographically controlled to a standard deviation of 3.6 nm. Both C- and O-Band lasers based on Sagnac loop mirror and micro-ring cavity have been demonstrated. The lasers are shown to be able to be modulated at 40 Gb/s.