Abstract: A modulator formed with a solid state electro-optic material having a pixellated structure interconnected to a circuit on a semiconductor substrate. Silicon CMOS integrated circuit that can include random access memories (RAMs) are used as a substrate and interfaced to solid state electro-optic materials coated thereon. In particular, the electro-optic modulators are controlled by RAM cells to produce a modulation of reflected light. SRAMs can be used with connection to the SRAM cell flip-flop. DRAMs can be used with the modulator replacing the DRAM storage capacitor. The SLM thus formed can be connected to a digital computer and controlled as if were a being written to as a memory, but other IC structures can also be used. In order to enhance the modulation effects, the electro-optic material is used as the spacer for a Fabry-Perot etalon structure that is also deposited on the semiconductor substrate. PLZT is a suitable electro-optic material.

Abstract: An electrically controllable azimuth optical rotator (10) includes a first quarterwave plate (16) for receiving a first beam of electromagnetic energy (22) having a first arbitrary polarization state, and outputting a second beam (122) in response to the first quarterwave plate (16). An electric voltage controlled ferro-electric variable phase retarder (20) aligned at approximately 45 degrees to the first quarterwave plate (16) receives the second beam 122 and provides a third beam 38 in response to the retarder (20). The electric voltage controlled ferro-electric variable phase retarder (20) is characterized by a phase shift of &phgr;=2&agr;, where &agr; is a desired angle of rotation of the first arbitrary polarization state. To provide a voltage-controlled rotation, a second quarterwave plate (18) is aligned either parallel or perpendicular to the first quarterwave plate (16) for receiving the third beam (38) and outputting a fourth beam (46) in response to the retarder (20).

Abstract: A polarization mode dispersion center (306) measures PMD impairment through the cross-correlation of optical pulses. A second variable phase retarder plate (504) is oriented with polarization eigenstates at preferably 45 degree angle with respect to those eigenstates of a first variable phase retarder plate (502) to provide controllable phase retardations that can be varied and measured as an indication of PMD impairment.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: An apparatus and method for filtering an optical input is disclosed. In an illustrative embodiment, an optical input is split into polarization components along separate paths. The polarization components are then fed into a first electro-optic device that includes a set of electrodes across which a voltage is applied to adjust a wavelength transmission characteristic of the device. A section of the first device positioned between the electrodes preferably has a birefringence that is adjusted depending on the voltage applied across the electrodes. The adjusted components of the optical input are thereafter combined to produce an optical output. Accordingly, the optical input can be attenuated based on the voltage applied to electrodes of the first electro-optic device.

Abstract: A ferroelectric layer is deposited or in close proximity to a ferromagnetic ferrite layer to make a microwave substrate on which conductors can be deposited or placed to make devices. The permittivity of the ferroelectric layer can be changed by applying a voltage and the permeability of the ferromagnetic layer can be changed with a magnetic field. This makes it possible to tune the device characteristics with two different effects taking best advantage of the capabilities of each. A material example is ferromagnetic yttrium-iron-garnet on which is deposited a thin film of ferroelectric barium strontium titanate. To minimize losses, the ferroelectric film should be high quality, but practical yttrium-iron-garnet substrates are polycrystalline so that the use of buffer layers is desirable. At least two methods can be used to deposit the ferroelectric film, pulsed laser deposition and metal-organic chemical liquid deposition.

Abstract: An apparatus and method for filtering an optical input is disclosed. In an illustrative embodiment, an optical input is split into polarization components along separate paths. The polarization components are then fed into a first electro-optic device that includes a set of electrodes across which a voltage is applied to adjust a wavelength transmission characteristic of the device. A section of the first device positioned between the electrodes preferably has a birefringence that is adjusted depending on the voltage applied across the electrodes. The adjusted components of the optical input are thereafter combined to produce an optical output. Accordingly, the optical input can be attenuated based on the voltage applied to electrodes of the first electro-optic device.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: A system for aligning the optical components of a chemical analysis system in which capillaries or optical fibers are supported by a substrate. The system provides for alignment of elements of an electrophoresis system in an efficient high sampling rate capability. The system provides multiple sources, such as lasers or LEDs that are optically coupled to each capillary or channel. Multi-analyte capability, a variety of analysis modes and DNA sequencing operations are applications of systems using a plurality of lasers per channel.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: An optical modulator is provided to control the intensity of a transmitted or reflected light. In a transmission mode, a separator splits arbitrarily polarized light into two polarization rays and one is made to travel a separate path from the other. A recombiner causes the two rays to recombine at an output unless an electro-optic phase retarder changes the polarization of the two rays, in which case, both of them miss the output by an amount which is a function of the voltage on the retarder. A normally-off version with low polarization mode dispersion is obtained by changing the orientation of the recombiner. A normally-on version with low polarization mode dispersion is obtained with a passive polarization direction rotator. Similar results can be obtained in a reflection mode where the input and output are on the same side of the modulator. Versions using a GRIN lens are particularly suited to modulation of light out of and back into fiber-optic cables.

Abstract: A polarization transformer includes at least one plate of transparent polycrystalline material which has an optical axis oriented perpendicular to a propagation direction of incident radiation having a first polarization state. The plate includes electrodes for applying an electric field across a plane of the plate perpendicular to the propagation direction so as to provide controlled phase change such that the polarization of radiation transmitted through the polarization transformer is transformed from the first polarization state to a second polarization state. The plate in a preferred embodiment comprises a ferroelectric complex oxide such as lead lanthanum zirconate titanate (PLZT) material. Such a material provides devices that have very fast response (on the order of microseconds) and low insertion loss.

Abstract: A system for aligning the optical components of a chemical analysis system in which capillaries or optical fibers are supported by a substrate. The system provides for alignment of elements of an electrophoresis system in an efficient high sampling rate capability. The system provides multiple sources, such as lasers or LEDs that are optically coupled to each capillary or channel. Multi-analyte capability, a variety of analysis modes and DNA sequencing operations are applications of systems using a plurality of lasers per channel.

Abstract: A light beam deflector comprising a modified asymmetric Fabry-Perot (Gires-Tournois) etalon having a back reflecting and electrically conducting mirror and a front partially transmitting mirror spaced apart by an electro-optic material, there also being a transparent sheet resistor between the electro-optic material and the front mirror. The invention further comprises a pair of electrodes contacting two generally parallel edges of the transparent sheet resistor so that if different voltages are applied between the electrodes with respect to the back conducting mirror, a front to back electric field which varies in a linear manner from one electrode to the other will be produced.

Abstract: Oxide thin films having a perovskite-like structure and undergoing a ferromagnetic phase transition with large temperature coefficients of resistance (TCRs) are disclosed. These can be useful materials for making thermistors, bolometers, infrared detectors and the like. These can be fabricated with a number of methods, preferably including metal oxide chemical vapor deposition, laser ablation and sputtering. In one embodiment, the oxides are based on a LaMnO3 with substitutions of Ca, Sr, Ba, Mn, and Pb for some of the La. The amounts can be varied to maximize the TCR or shift the temperature at which the maximum occurs. Methods of making such thin films are disclosed. In one embodiment, the high sensitivity films can be used in an array of micro-bolometers in an infrared camera.

Abstract: An optical modulator is provided to control the intensity of a transmitted or reflected light. In a transmission mode, a separator splits arbitrarily polarized light into two polarization rays and one is made to travel a separate path from the other. A recombiner causes the two rays to recombine at an output unless an electro-optic phase retarder changes the polarization of the two rays, in which case, both of them miss the output by an amount which is a function of the voltage on the retarder. A normally-off version with low polarization mode dispersion is obtained by changing the orientation of the recombiner. A normally-on version with low polarization mode dispersion is obtained with a passive polarization direction rotator. Similar results can be obtained in a reflection mode where the input and output are on the same side of the modulator. Versions using a GRIN lens are particularly suited to modulation of light out of and back into fiber-optic cables.

Abstract: A light beam deflector comprising a modified asymmetric Fabry-Perot (Gires-Tournois) etalon having a back reflecting and electrically conducting mirror and a front partially transmitting mirror spaced apart by an electro-optic material, there also being a transparent sheet resistor between the electro-optic material and the front mirror. The invention further comprises a pair of electrodes contacting two generally parallel edges of the transparent sheet resistor so that if different voltages are applied between the electrodes with respect to the back conducting mirror, a front to back electric field which varies in a linear manner from one electrode to the other will be produced.

Abstract: A single crystal thin film of the compound ZnSiXGe1-XN2 (where x can range from 0 to 1). This thin film single crystal can be disposed on a single crystal substrate made of, for example, sapphire, silicon carbide, lithium gallate or silicon with or without an additional GaN buffer layer grown on them. Alternately, a GaN single crystal thin film grown on any substrate can be used. In the case of sapphire, it can be R-plane so that the thin film has its c-axis lying within the thin film or A- or C-plane so that the thin film has its c-axis perpendicular to the substrate. The substrate could also be any substrate with a GaN single crystal thin film deposited on it. ZnSiXGe1-XN2 single crystal thin films can be made by the MOCVD method using suitable precursors, molar injection ratios, and substrate temperatures. It is possible to make various optical, electro-optical or electronic devices with the material, for example, a second harmonic generator emitting blue light.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.