Abstract: A method of cold forming a glass laminate structure. The method includes assembling a multi-layer structure having two buffer plates and a glass laminate structure intermediate the two buffer plates, wherein one or both of the two buffer plates includes a pattern formed thereon or therein or the multi-layer structure includes non-deformable materials forming a pattern. The method further includes cold forming the glass laminate structure in the autoclave by heating the assembled structure to a temperature about 5 to 10 degrees above the softening point of the polymer interlayer for a predetermined period of time at a predetermined pressure. After processing the glass laminate structure can be removed from between the buffer plates wherein the pattern formed in or on the one or both buffer plates or non-deformable materials has been transferred to the glass laminate structure as a function of variances of thicknesses in the glass laminate structure.

Abstract: A method for manufacturing a hermetically sealed package is provided, the method comprising the steps of: using a laser to heat a frit, disposed in a pattern between two substrates, such that the heated frit forms a hermetic seal which connects the substrates and further comprising: directing the laser to enter the frit pattern, then to trace the frit pattern, then to retrace a portion of the frit pattern, and then to exit the frit pattern; and selecting an initial laser power which, when the laser enters the frit pattern, is insufficient to heat the frit to form a hermetic seal; then increasing the laser power over a first section of the frit pattern to a target laser power at least sufficient to heat the frit to form a hermetic seal; and then decreasing the laser power over a second section of the frit pattern until the laser power is insufficient to heat the frit to form a hermetic seal before the laser exits the frit pattern.

Abstract: A process for the organooxylation of chlorosilanes. The process comprises contacting in a film a chlorosilane and an alcohol capable of forming an ester with the silicon of the chlorosilane and thereby forming an equilibrium mixture comprising an organooxysilane and hydrogen chloride. The film is heated at a temperature sufficient to cause vaporization of the hydrogen chloride from the equilibrium mixture thereby increasing the yield of organooxysilane in the equilibrium mixture. In a preferred process, the process is run in a falling-film type reactor or a wiped-film type reactor.