Abstract: A high frequency heating apparatus which heats a substrate by applying high frequency waves thereto. The high frequency heating apparatus includes a high frequency generator which generates high frequency to heat the substrate. The distance from the substrate to the high frequency generator is n/2*?, where n is a natural number ranging from 1 to 6, and ? is the wavelength of the high frequency that is generated by the high frequency generator.

Abstract: A high frequency heating apparatus which heats a substrate by applying high frequency waves. The high frequency heating apparatus includes a high frequency generator which generates high frequency to heat the substrate and a reflector which reflects the high frequency generated by the high frequency generator toward the substrate.

Abstract: An apparatus for measuring the transmittance of a piece of cover glass for a photovoltaic cell which can measure an accurate transmittance irrespective of whether or not the cover glass has a pattern and irrespective of the shape of the pattern. The apparatus includes a light source part disposed in front of the piece of cover glass. The light source part directs light into the piece of cover glass. A detector is disposed in the rear of the piece of cover glass, and detects light that has been directed into the piece of cover glass and then has passed through the piece of cover glass. The detector is disposed within a range where the intensity of the light that has passed through the piece of cover glass is uniform.

Abstract: A conductive film substrate, a photovoltaic cell having the same, and a method of manufacturing the same. The conductive film substrate includes a base substrate and a transparent conductive film formed on the base substrate. The transparent conductive film is a zinc oxide thin film which has first texture structures and second texture structures concurrently formed on a surface thereof. The second texture structures are smaller than the first texture structures.

Abstract: An oxide thin film substrate which has a high haze value, a method of manufacturing the same, and a photovoltaic cell and organic light-emitting device including the same. The oxide thin film substrate includes a base substrate having a first texture on the surface thereof and a transparent oxide thin film formed on the base substrate. The transparent oxide thin film has a second texture on the surface thereof.

Abstract: A reflective substrate, the transmittance of visible light of which is improved, and a method of manufacturing the same. The reflective substrate includes a glass substrate, an oxide or nitride film formed on the glass substrate, and vanadium dioxide (VO2) film formed on the oxide or nitride film.

Abstract: An apparatus for measuring transmittance which can realize reliability for measurement of the transmittance of a piece of patterned glass by post dispersion of light. The apparatus includes a light source which is disposed in front of an object that is to be measured, and directs light into the object. An integrating sphere is disposed in the rear of the light source and integrating light incident thereinto. The object is mounted on the front portion of the integrating sphere. A light dispersing part is disposed in the rear of the integrating sphere, and disperses light that has been integrated by and then emitted from the integrating sphere. An optical receiver is disposed adjacent to the light dispersing part, and receives light that has been dispersed by the light dispersing part.

Abstract: A photovoltaic module for converting light energy into electrical energy. The photovoltaic module has a convex curvature which is exposed outward. The photovoltaic module prevents sagging, which would otherwise occur due to the increased weight caused by an increase in size.

Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.

Abstract: A wafer structure and epitaxial growth method for growing the same. The method may include forming a mask layer having nano-sized areas on a wafer, forming a porous layer having nano-sized pores on a surface of the wafer by etching the mask layer and a surface of the wafer, and forming an epitaxial material layer on the porous layer using an epitaxial growth process.

Abstract: A thermochromic substrate that has a thermochromic thin film, and a method of manufacturing the same. The thermochromic substrate includes a base substrate, an oxide or nitride thin film formed on the base substrate, a vanadium dioxide (VO2) thin film formed on the oxide or nitride thin film, and a photochromic thin film formed on the VO2 thin film.

Abstract: A method of machining a semiconductor substrate using a soft polishing pad and an apparatus for machining a semiconductor substrate which has a soft polishing pad. The method includes the steps of lapping a surface of the semiconductor substrate, and polishing the lapped surface of the semiconductor substrate. The step of polishing the lapped surface of the semiconductor substrate includes polishing the lapped surface of the semiconductor substrate using slurry containing an abrasive interposed between the semiconductor substrate and a polishing pad which has a shore D hardness of 65 or less.

Abstract: A method of cutting a piece of tempered glass in which the piece of tempered glass is cut after a thin film having a tensile stress is formed a method of fabricating a touchscreen using the same. The method includes a step of forming a thin film layer having a tensile stress on the piece of tempered glass and a step of cutting the piece of tempered glass.

Abstract: A method of manufacturing a thermochromic substrate, with which transmittance can be increased. The method includes the steps of forming a first thin film as a coating on a base substrate, the refractive index of the first thin film being different from that of a VO2 thin film; forming a pre-thermochromic thin film by coating the first thin film with pure vanadium; forming a second thin film as a coating on the pre-thermochromic thin film, the refractive index of the second thin film being different from that of a VO2 thin film; and heat-treating a resultant stack that includes the base substrate, the first thin film, the pre-thermochromic thin film and the second thin film.

Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.

Abstract: A method of manufacturing a thin film-bonded substrate in which a high-quality gallium nitride (GaN) thin film can be transferred. The method includes implanting ions into a first GaN substrate from a Ga surface thereof and thereby forming a first ion implantation layer, bonding a first heterogeneous substrate onto the Ga surface of the first GaN substrate, cleaving the first GaN substrate along the first ion implantation layer and thereby leaving a second GaN substrate on the first heterogeneous substrate, implanting ions into the second GaN substrate from an N surface thereof and thereby forming a second ion implantation layer, bonding a second heterogeneous substrate onto the N surface of the second GaN substrate, and cleaving the second GaN substrate along the second ion implantation layer and thereby leaving a GaN thin film.

Abstract: An electrode active material includes a core capable of intercalating and deintercalating lithium; and a surface treatment layer disposed on at least a portion of a surface of the core, wherein the surface treatment layer includes a lithium-free oxide having a spinel structure, and an intensity of an X-ray diffraction peak corresponding to impurity phase of the lithium-free oxide, when measured using Cu—K? radiation, is at a noise level of an X-ray diffraction spectrum or less.

Abstract: An optical filter for compensating for color shift is provided in front of a display panel of a display device. The optical filter includes a background layer and a green wavelength absorption pattern provided with a predetermined thickness on the background layer. The green wavelength absorption pattern absorbs a green wavelength of light. The green wavelength absorption pattern contains a material that absorbs a green wavelength of light in the range of 510 nm to 560 nm, and can also contain a white light absorbing material. A green's complementary color absorbing part absorbs a wavelength of light complementary to green, and contains at least one of a material absorbing a blue wavelength of light in the range of 440 nm to 480 nm and a material absorbing a red wavelength of light in the range of 600 nm to 650 nm.

Abstract: A bonded substrate, the surface roughness of which is reduced, and a method of manufacturing the same. The bonded substrate includes a base substrate and an intermediate layer disposed on the base substrate. The intermediate layer has a greater bubble diffusivity than the base substrate. A thin film layer is bonded onto the intermediate layer, and has a different chemical composition from the base substrate.

Abstract: A method of manufacturing a gallium nitride (GaN) film in which defects in a GaN film that grows can be reduced. The method includes the step of growing a GaN nano-rod on a substrate, the nano-rod having a circumferential groove in an outer periphery thereof, and the step of growing a GaN film on the GaN nano-rod.