Patents Assigned to Corporation for National Research Initiatives
  • Patent number: 10403463
    Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: September 3, 2019
    Assignee: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventors: Mehmet Ozgur, Paul Sunal, Lance Oh, Michael Huff, Michael Pedersen
  • Patent number: 10323772
    Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: June 18, 2019
    Assignee: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventor: Michael A. Huff
  • Patent number: 9852870
    Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
    Type: Grant
    Filed: May 23, 2011
    Date of Patent: December 26, 2017
    Assignee: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventors: Mehmet Ozgur, Paul Sunal, Lance Oh, Michael Huff, Michael Pedersen
  • Patent number: 9646878
    Abstract: A method is disclosed for manufacturing integrated circuits, microelectronics, micro-electro-mechanical systems (MEMS), nano-electro-mechanical systems (NEMS), photonic, and any micro- and nano-fabricated devices and systems designs that allow these designs to be kept secure. The manufacturing of the devices in the substrates is performed in a traditional manner at a foundry that can be located anywhere in the world., The manufacturing at this foundry is stopped just before the fabrication of the first layer of electrical interconnects. At this stage, the semiconductor substrates with the devices, minus electrical interconnects, are sent back to the design organization (or their designated trusted foundry) to perform the fabrication of the electrical interconnects to complete the entire manufacturing process.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: May 9, 2017
    Assignee: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventor: Michael A. Huff
  • Patent number: 9576773
    Abstract: A method or process is disclosed for etching deep, high-aspect ratio features into silicon dioxide material layers and substrates, including glass, fused silica, quartz, or similar materials, using a plasma etch technology. The method has application in the fabrication and manufacturing of MEMS, microelectronic, micro-mechanical, photonic and nanotechnology devices in which silicon dioxide material layers or substrates are used and must be patterned and etched. Devices that benefit from the method described in this invention include the fabrication of MEMS gyroscopes, resonators, oscillators, microbalances, accelerometers, for example. The etch method or process allows etch depths ranging from below 10 microns to over 1 millimeter and aspect ratios from less than 1 to 1 to over 10 to 1 with etched feature sidewalls having vertical or near vertical angles. Additionally, the disclosed method provides requirements of the etched substrates to reduce or eliminate undesired effects of an etch.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: February 21, 2017
    Assignee: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventors: Michael A. Huff, Michael Pedersen
  • Patent number: 9536706
    Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: January 3, 2017
    Assignee: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventors: Michael A. Huff, Michael Pedersen
  • Patent number: 9312103
    Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: April 12, 2016
    Assignee: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventors: Michael A. Huff, Michael Pedersen
  • Patent number: 9053929
    Abstract: A method and system are disclosed for controlling the state of stress in deposited thin films on microelectronics wafers for the integration of MEMS and NEMS devices with microelectronics. According to the method and system, various process parameters including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step-by-step methodology to arrive at a pre-determined desired state of stress in thin films deposited using PVD at low temperatures and desired stress states onto wafers or substrates having microelectronics processing performed on them.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: June 9, 2015
    Assignee: Corporation For National Research Initiatives
    Inventors: Michael A. Huff, Paul Sunal
  • Patent number: 9019686
    Abstract: A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: April 28, 2015
    Assignee: Corporation for National Research Initiatives
    Inventors: Michael A. Huff, Mehmet Ozgur
  • Publication number: 20150034592
    Abstract: A method or process is disclosed for etching deep, high-aspect ratio features into silicon dioxide material layers and substrates, including glass, fused silica, quartz, or similar materials, using a plasma etch technology. The method has application in the fabrication and manufacturing of MEMS, microelectronic, micro-mechanical, photonic and nanotechnology devices in which silicon dioxide material layers or substrates are used and must be patterned and etched. Devices that benefit from the method described in this invention include the fabrication of MEMS gyroscopes, resonators, oscillators, microbalances, accelerometers, for example. The etch method or process allows etch depths ranging from below 10 microns to over 1 millimeter and aspect ratios from less than 1 to 1 to over 10 to 1 with etched feature sidewalls having vertical or near vertical angles. Additionally, the disclosed method provides requirements of the etched substrates to reduce or eliminate undesired effects of an etch.
    Type: Application
    Filed: July 30, 2013
    Publication date: February 5, 2015
    Applicant: Corporation For National Research Initiatives
    Inventors: Michael A. Huff, Michael Pedersen
  • Patent number: 8895338
    Abstract: An improved method for the fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Photonics, Nanotechnology, 3-Dimensional Integration, Micro- and Nano-Fabricated Devices and Systems for both rapid prototyping development and manufacturing is disclosed. The method includes providing a plurality of different standardized and repeatable process modules usable in fabricating the devices and systems, defining a process sequence for fabricating a predefined one of the devices or systems, and identifying a series of the process modules that are usable in performing the defined process sequence and thus in fabricating the predefined device or system.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: November 25, 2014
    Assignee: Corporation for National Research Initiatives
    Inventor: Michael A. Huff
  • Patent number: 8852378
    Abstract: The present invention relates generally to a metallic alloy composed of Titanium and Tungsten that together form an alloy having a Coefficient of Thermal Expansion (CTE), wherein the content of the respective constituents can be adjusted so that the alloy material can be nearly perfectly matched to that of a commonly used semiconductor and ceramic materials. Moreover, alloys of Titanium-Tungsten have excellent electrical and thermal conductivities making them ideal material choices for many electrical, photonic, thermoelectric, MMIC, NEMS, nanotechnology, power electronics, MEMS, and packaging applications. The present invention describes a method for designing the TiW alloy so as to nearly perfectly match the coefficient of thermal expansion of a large number of different types of commonly used semiconductor and ceramic materials.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: October 7, 2014
    Assignee: Corporation for National Research Initiatives
    Inventors: Michael A. Huff, Paul Sunal
  • Publication number: 20140268076
    Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
    Inventor: CORPORATION FOR NATIONAL RESEARCH INITIATIVES
  • Patent number: 8790534
    Abstract: A system and method are disclosed for the precision fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Microsytems, Nanosystems, Photonics, 3-D integration, heterogeneous integration, and Nanotechology devices and structures. The disclosed system and method can also be used in any fabrication technology to increase the precision and accuracy of the devices and structures being made compared to conventional means of implementation. A platform holds and moves a substrate to be machined during machining and a plurality of lasers and/or ion beams are provided that are capable of achieving predetermined levels of machining resolution and precision and machining rates for a predetermined application. The plurality of lasers and/or ion beams comprises a plurality of the same type of laser and/or ion beam.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: July 29, 2014
    Assignee: Corporation for National Research Initiatives
    Inventor: Michael A. Huff
  • Patent number: 8660157
    Abstract: A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: February 25, 2014
    Assignee: Corporation for National Research Initiatives
    Inventors: Michael A. Huff, Jonah Jacob
  • Patent number: 8423670
    Abstract: A set of multiple servers in which each server (a) provides a service having a name or other identifier, and for which each server (b) has a network address that differs from the network addresses of the other servers in the set, and (c) is co-located with a resolution mechanism that maps a name or other identifier of the service that is received from a client to a network address that is local to the resolution mechanism. The resolution mechanisms are operated to enable a client to choose one of the servers as being currently operational and/or accessible to provide the service to the client, and to so choose the server without the client needing to first access the chosen server.
    Type: Grant
    Filed: January 25, 2006
    Date of Patent: April 16, 2013
    Assignee: Corporation for National Research Initiatives
    Inventor: Sean David Reilly
  • Publication number: 20130008875
    Abstract: A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit.
    Type: Application
    Filed: September 12, 2012
    Publication date: January 10, 2013
    Applicant: Corporation for National Research Initiatives
    Inventors: Michael A. HUFF, Mehmet Ozgur
  • Patent number: 8304324
    Abstract: A method of wafer or substrate bonding a substrate made of a semiconductor material with a substrate made from a metallic material is disclosed. The method allows the bonding of the two substrates together without the use of any intermediate joining gluing, or solder layer(s) between the two substrates. The method allows the moderate or low temperature bonding of the metal and semiconductor substrates, combined with methods to modify the materials so as to enable low electrical resistance interfaces to be realized between the bonded substrates, and also combined with methods to obtain a low thermal resistance interface between the bonded substrates, thereby enabling various useful improvements for fabrication, packaging and manufacturing of semiconductor devices and systems.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: November 6, 2012
    Assignee: Corporation for National Research Initiatives
    Inventor: Michael Huff
  • Patent number: 8270081
    Abstract: A method of reflecting impinging electromagnetic radiation by using engineered surfaces of alternating layers of materials having different indices of refraction is described. These layers can be fabrication or applied onto the surfaces of macro-scale objects. Also, a method of limiting the heating within the interior of an object being impinged upon by electromagnetic radiation is described.
    Type: Grant
    Filed: November 10, 2008
    Date of Patent: September 18, 2012
    Assignee: Corporation For National Research Initiatives
    Inventor: Michael A Huff
  • Publication number: 20110309553
    Abstract: A system and method are disclosed for the precision fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Microsytems, Nanosystems, Photonics, 3-D integration, heterogeneous integration, and Nanotechology devices and structures. The disclosed system and method can also be used in any fabrication technology to increase the precision and accuracy of the devices and structures being made compared to conventional means of implementation. A platform holds and moves a substrate to be machined during machining and a plurality of lasers and/or ion beams are provided that are capable of achieving predetermined levels of machining resolution and precision and machining rates for a predetermined application. The plurality of lasers and/or ion beams comprises a plurality of the same type of laser and/or ion beam.
    Type: Application
    Filed: May 2, 2011
    Publication date: December 22, 2011
    Applicant: Corporation for National Research Initiatives
    Inventor: Michael A. HUFF