Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve that uses a multicity of piezoelectric actuators. The 3-way has a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The three-way microvalve device and method of fabrication can be tailored to the requirements of a wide range of applications and fluid types. The microvalve can be used to control fluids at high pressures and provides for low flow resistances when the microvalve is open and has low leakage when closed.

Abstract: A package and method of packaging for integrated microfluidic devices and systems is disclosed wherein a package is made from individually processed and patterned layers of LTCC green tape, that is aligned and stacked, and then co-fired to form a stable LTCC ceramic packaging modules. Subsequently, microfluidic device die and/or integrated microfluidic systems device die are bonded to pre-determined areas of the packaging modules and the modules are aligned bonded together to form leak-free, sealed packages for the microfluidic devices and systems. The use of LTCC materials and techniques provides a low-cost flexible and easily customizable packaging approach for microfluidic devices and systems that can be designed and transitioned into production with significant development time and cost.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve which uses a single piezoelectric actuator. The present invention has a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The present invention allows for the implementation of a three-way microvalve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types. The microvalve may employ a novel pressure-balancing scheme wherein the fluid pressure balances the actuator mechanism so that only a small amount of actuation pressure (or force) is needed to switch the state of the actuator and device from open to closed, or closed to open.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve which uses a single piezoelectric actuator. The present invention has a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The present invention allows for the implementation of a three-way microvalve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types. The microvalve may employ a novel pressure-balancing scheme wherein the fluid pressure balances the actuator mechanism so that only a small amount of actuation pressure (or force) is needed to switch the state of the actuator and device from open to closed, or closed to open.

Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride.

Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures.

Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures.

Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Abstract: A method is disclosed for manufacturing integrated circuits, microelectronics, micro-electro-mechanical systems (MEMS), nano-electro-mechanical systems (NEMS), photonic, and any micro- and nano-fabricated devices and systems designs that allow these designs to be kept secure. The manufacturing of the devices in the substrates is performed in a traditional manner at a foundry that can be located anywhere in the world., The manufacturing at this foundry is stopped just before the fabrication of the first layer of electrical interconnects. At this stage, the semiconductor substrates with the devices, minus electrical interconnects, are sent back to the design organization (or their designated trusted foundry) to perform the fabrication of the electrical interconnects to complete the entire manufacturing process.

Abstract: A method or process is disclosed for etching deep, high-aspect ratio features into silicon dioxide material layers and substrates, including glass, fused silica, quartz, or similar materials, using a plasma etch technology. The method has application in the fabrication and manufacturing of MEMS, microelectronic, micro-mechanical, photonic and nanotechnology devices in which silicon dioxide material layers or substrates are used and must be patterned and etched. Devices that benefit from the method described in this invention include the fabrication of MEMS gyroscopes, resonators, oscillators, microbalances, accelerometers, for example. The etch method or process allows etch depths ranging from below 10 microns to over 1 millimeter and aspect ratios from less than 1 to 1 to over 10 to 1 with etched feature sidewalls having vertical or near vertical angles. Additionally, the disclosed method provides requirements of the etched substrates to reduce or eliminate undesired effects of an etch.

Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.

Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.

Abstract: A method and system are disclosed for controlling the state of stress in deposited thin films on microelectronics wafers for the integration of MEMS and NEMS devices with microelectronics. According to the method and system, various process parameters including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step-by-step methodology to arrive at a pre-determined desired state of stress in thin films deposited using PVD at low temperatures and desired stress states onto wafers or substrates having microelectronics processing performed on them.

Abstract: A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit.

Abstract: A method or process is disclosed for etching deep, high-aspect ratio features into silicon dioxide material layers and substrates, including glass, fused silica, quartz, or similar materials, using a plasma etch technology. The method has application in the fabrication and manufacturing of MEMS, microelectronic, micro-mechanical, photonic and nanotechnology devices in which silicon dioxide material layers or substrates are used and must be patterned and etched. Devices that benefit from the method described in this invention include the fabrication of MEMS gyroscopes, resonators, oscillators, microbalances, accelerometers, for example. The etch method or process allows etch depths ranging from below 10 microns to over 1 millimeter and aspect ratios from less than 1 to 1 to over 10 to 1 with etched feature sidewalls having vertical or near vertical angles. Additionally, the disclosed method provides requirements of the etched substrates to reduce or eliminate undesired effects of an etch.

Abstract: An improved method for the fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Photonics, Nanotechnology, 3-Dimensional Integration, Micro- and Nano-Fabricated Devices and Systems for both rapid prototyping development and manufacturing is disclosed. The method includes providing a plurality of different standardized and repeatable process modules usable in fabricating the devices and systems, defining a process sequence for fabricating a predefined one of the devices or systems, and identifying a series of the process modules that are usable in performing the defined process sequence and thus in fabricating the predefined device or system.

Abstract: The present invention relates generally to a metallic alloy composed of Titanium and Tungsten that together form an alloy having a Coefficient of Thermal Expansion (CTE), wherein the content of the respective constituents can be adjusted so that the alloy material can be nearly perfectly matched to that of a commonly used semiconductor and ceramic materials. Moreover, alloys of Titanium-Tungsten have excellent electrical and thermal conductivities making them ideal material choices for many electrical, photonic, thermoelectric, MMIC, NEMS, nanotechnology, power electronics, MEMS, and packaging applications. The present invention describes a method for designing the TiW alloy so as to nearly perfectly match the coefficient of thermal expansion of a large number of different types of commonly used semiconductor and ceramic materials.