Abstract: A system and method for recovering a metal value from a metal-bearing ore material are provided. A metal-bearing ore can be mixed with certain substances and to form an agglomerated ore. In an intermediate state, between agglomeration and heap formation, bacteria can be added to the metal-bearing ore material to produce an augmented ore. The augmented ore can then be formed into a heap. Bacteria from the heap may be fortified to assist in bacterial growth.

Abstract: To appropriately find an omission of implementation of a shared variable defined between different programs and an error of a shared variable name before a program is executed. A development support device (50) for developing a plurality of different programming languages that are executed in a control device (10) includes: a shared variable reference (TBL1) which is a pre-created shared variable reference and is referred to in source codes of the plurality of different programming languages, and used for a shared variable that shares a memory; an input unit (71) configured to input the source codes of the plurality of different programming languages; and a determination unit (73d) configured to determine whether the shared variable is referred to in the input source codes of the plurality of different programming languages based on the shared variable reference (TBL1).

Abstract: A communication device according to an embodiment includes a prediction unit and a creation unit. The prediction unit predicts a transition of a communication quality in each communication area. The creation unit creates a communication schedule of data communication for a terminal device based on the transition of a communication quality in each communication area that is predicted by the prediction unit and a state of the terminal device that is predicted from schedule information that relates to a schedule of the terminal device.

Abstract: An image generating part generating feature extraction images by applying an identification part, which has completed learning, that has executed learning in advance to extract features using learning image data to an inspection image, an inspection part specifying an area corresponding to a defect on the basis of judgment parameters for judging presence/absence of a defect in the inspection target object and a binary image generated on the basis of the feature extraction images, and a setting part calculating an image score based on a density of a color of pixels of a setting image using the setting image that is the binary image in which an area corresponding to the defect is specified and updating the judgment parameters such that a difference between an image score of the inside of the area and an image score of the outside of the area becomes relatively large are included.

Abstract: According to one embodiment, a method of manufacturing a microchannel includes coating a silicone resin onto a mold corresponding to a microchannel and a first opening communicating with the microchannel, curing the silicone resin by light using a mask having a light shielding portion corresponding to the first opening, removing an uncured silicone resin, and releasing the cured silicone resin from the mold.

Abstract: According to one embodiment, there is provided a semiconductor device comprising: a control circuit connected to a bus; a first circuit operating under control of the control circuit; a bus access detection circuit that detects bus access from the control circuit to the first circuit without going through the bus; a switch element connected between the first circuit and a power supply; and a second circuit connected between the first circuit and the bus, the second circuit controlling, when the bus access to the first circuit is detected by the bus access detection circuit, the switch element such that power from the power supply is supplied to the first circuit.

Abstract: In one embodiment, a plant control apparatus controls a power plant. The plant includes a gas turbine, a generator driven by the gas turbine, an exhaust heat recovering boiler to generate first steam by using heat of exhaust gas from the gas turbine, a first steam turbine driven by the first steam, a reheater provided in the boiler and configured to heat exhaust steam from the first steam turbine by the exhaust gas to generate reheat steam, and a second steam turbine driven by the reheat steam. The apparatus includes a first warming-up module to supply second steam from equipment different from the boiler to the first steam turbine to warm up this turbine, before this turbine is started. The apparatus further includes a second warming-up module to supply the second steam to the reheater to warm up the reheater, before the first steam turbine is started.

Abstract: A power supply system including a low-voltage system and a high-voltage system having the high-voltage battery, that can provide an energy-efficient system of equalization of the high-voltage battery, is provided. The power supply system includes the high-voltage system having the high-voltage battery constituted of a plurality of battery cells, the low-voltage system, an insulation transmission part configured to transmit, in an insulated fashion, energy from each of the battery cells to the low-voltage system individually, and an equalization and transmission processing part configured to measure voltage of each of the battery cells, set a target battery cell to be processed for equalization, and control operation of the insulation transmission part and thereby transmit energy of the target battery cell to the low-voltage system.

Abstract: Provided is a method of producing a chlorogenic acid-containing composition, including a step of subjecting coffee beans to column extraction using an aqueous solvent, in which the coffee beans include at least one selected from the group consisting of green coffee beans, decaffeinated green coffee beans, roasted coffee beans having an L value of 40 or more, and decaffeinated roasted coffee beans having an L value of 25 or more, and include at least one selected from the group consisting of unground coffee beans and ground coffee beans having an average particle size of 2.0 mm or more.

Abstract: A grating structure has a plurality of grating members that extend upward from a base in a spaced-apart parallel relationship and include an end member. For example, the grating structure is a plurality of semiconductor fins on a base. The base can be any structure underlying the grating members. The grating members have a member width and a member height. Adjacent grating members are spaced by a grating spacing. A process artifact is adjacent the end member and is spaced from the end member by a horizontal distance consistent with the member spacing. In some cases, the process artifact can be a stub of a second material on or otherwise extending from the base adjacent an end member of the grating structure. In other cases, the process artifact can be a recess in or otherwise extending into the base adjacent an end member of the grating structure.

Abstract: A composition for treating a surface of semiconductor is provided by (A) a polymer having a polymer chain having a repeating unit represented by the following Formula (1); and (B) a chelating agent having a molecular weight of 500 or less: wherein R1 represents a hydrogen atom or a methyl group; Z represents a group forming an organic ammonium salt, —NR5R6 (wherein R5 and R6 each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group), or a substituted or unsubstituted nitrogen-containing heterocyclic group; and X represents a single bond or a divalent linking group.

Abstract: A memory device includes first to third electrode layers and first to third columnar bodies. The first electrode layers are stacked above a foundation layer. The second and third electrode layers are arranged above the first electrode layers in a direction crossing a stacking direction of the first electrode layers. The first columnar body extends through the first and second electrode layers. The second columnar body extends through the first and third electrode layers. The third columnar body extends through the first electrode layers, and is positioned between the second electrode layer and the third electrode layer. The first to third columnar bodies include first to third semiconductor layers, respectively. The first and second semiconductor layers are electrically connected to the foundation layer, and the third semiconductor layer is electrically insulated from the foundation layer by an insulating film provided between the foundation layer and the third semiconductor layer.

Abstract: The object of the present invention is to provide an emulsion composition that maintains emulsion stability even after high temperature process such as sterilization (heat resistance), shows a small change in particle size distribution between before and after heating, and maintains emulsion stability even under conditions where transformation of an oil phase component (for example, solidification or crystallization of the oil phase component due to temperature drop, or melting of the oil phase component due to temperature rise) occurs (temperature drop resistance), wherein the composition is easily handled during the production process. The object is solved by an oil-in-water emulsion composition containing solid particles, a predefined surfactant, an oil phase component, and an aqueous phase component, wherein the oil phase component includes a predefined oil component and the solid particles are distributed along the interface between the oil phase component and the aqueous phase component.

Abstract: A composition includes a near infrared absorbing colorant, a surfactant, and an antioxidant, in which the near infrared absorbing colorant is a compound that includes a ?-conjugated plane having a monocyclic or fused aromatic ring, a content of the near infrared absorbing colorant is 10 mass % or higher with respect to a total solid content of the composition, and the antioxidant is a compound that includes a phenol structure with a hydrocarbon group having one or more carbon atoms.

Abstract: An information processing apparatus (2000) includes a summarizing unit (2040) and a display control unit (2060). The summarizing unit (2040) obtains a video (30) generated by each of a plurality of cameras (10). Furthermore, the summarizing unit (2040) performs a summarizing process on the video (30) and generates summary information of the video (30). The display control unit (2060) causes a display system (20) to display the video (30). Here, the display control unit (2060) causes the display system (20) to display the summary information of the video (30) in response to that a change in a display state of the video (30) the display system (20) satisfies a predetermined condition.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

Abstract: An ultrasound observation device includes a processor configured to execute: generating an ultrasound image; setting at least two regions of interest on the ultrasound image; calculating feature value on each of the set regions based on the ultrasound signal; calculating a representative value on each of the set regions based on the calculated feature value of each of the set regions; selecting at least one representative value from the representatives values of the set regions; selecting the feature value having a predetermined relationship with the selected representatives value from the feature value used for calculating the selected representatives value; setting the selected feature value as a threshold; setting, as a display specification, a color pattern of the feature value to be displayed on a display based on the set threshold; and generating feature-value image data in which the feature value is colored with the set display specification.

Abstract: The present invention concerns a method and a device for estimating a level of damage or a lifetime expectation of a power semiconductor module comprising at least one die that is mechanically, thermally, and electrically attached to a substrate, composed of plural layers of different materials. The invention: obtains power losses of the power semiconductor module, obtains the temperature in at least two different locations of the power semiconductor module, estimates a thermal model between the at least two different locations of the power semiconductor module using the determined power losses and the obtained temperatures, determines if a notification indicating the level of damage or the lifetime expectation has to be performed according to the estimated thermal model and a reference thermal model. notifies the level and location of damage or the lifetime expectation if the determining step determines that the notification has to be performed.

Abstract: A nonvolatile semiconductor memory device includes a first wiring layer, multiple second wiring layers provided above the first wiring layer and arrayed along a direction perpendicular to a semiconductor substrate, a semiconductor layer extending along the direct ion and electrically connected to the first wiring layer, a first insulating layer extending along the direction and provided between the semiconductor layer and the multiple second wiring layers, a first oxide layer extending along the direction and provided between the first insulating layer and the multiple second wiring layers, and multiple second oxide layers having first sides being respectively in contact with the multiple second wiring layers and having second sides being in contact with the first oxide layer, a resistance value of a stacked film configured with the first oxide layer and the multiple second oxide layers varying according to a voltage being applied to the multiple second wiring layers.

Abstract: A semiconductor memory device comprises: a substrate; gate electrodes arranged in a first direction crossing a surface of the substrate; a first semiconductor layer including a first portion extending in the first direction and facing the plurality of gate electrodes, and, a second portion nearer to the substrate than the first portion; a gate insulating film provided between the gate electrode and the first portion of the first semiconductor layer, and, including a memory portion; and, a wiring portion provided between the substrate and the plurality of gate electrodes, connected to the second portion of the first semiconductor layer, and, extending in a second direction crossing the first direction. The wiring portion comprises a second semiconductor layer connected to the second portion of the first semiconductor layer. The second semiconductor layer includes a first crystal grain larger than a thickness in the first direction of the second semiconductor layer.