Abstract: A heat insulator including a porous sintered body having a porosity of 70 vol % or more, pores having a pore size of more than 1000 ?m in a proportion of 10 vol % or less of all pores and pores having a pore size of 0.8 ?m or more and less than 10 ?m occupy 50 vol % or more and 80 vol % or less of pores having a pore size of 1000 ?m or less, while pores having a pore size of 0.01 ?m or more and less than 0.8 ?occupy 10 vol % or more and 30 vol % or less pores having a pore size of 1000 ?m or less. The porous sintered body is formed from MgAl2O4 raw material and includes a fibrous layer formed from inorganic material fibers, the heat conductivity of the heat insulator at 1000° C. or more and 1500° C. or less being 0.40 W/m·K) or less.

Abstract: One aspect of the heat insulator of the present invention includes a porous sintered body having a porosity of 70 vol % or more and less than 91 vol %, and pores having a pore size of 0.8 ?m or more and less than 10 ?m occupy 10 vol % or more and 70 vol % or less of the total pore volume, while pores having a pore size of 0.01 ?m or more and less than 0.8 ?m occupy 5 vol % or more and 30 vol % or less of the total pore volume. The porous sintered body is formed from an MgAl2O4 (spinel) raw material and fibers formed of an inorganic material, the heat conductivity of the heat insulator at 1000° C. or more and 1500° C. or less is 0.40 W/(m·K) or less, and the weight ratio of Si relative to Mg in the porous sintered body is 0.15 or less.

Abstract: A heat insulating material includes a porous sintered body formed of MgAl2O4 and having a porosity of 60% or more and less than 73%. In the heat insulating material, pores having a pore diameter of 0.8 ?m or more and less than 10 ?m occupy 30 vol % or more and less than 90 vol % of a total pore volume, pores having a pore diameter of 0.01 ?m or more and less than 0.8 ?m occupy 10 vol % or more and less than 60 vol % of the total pore volume, the thermal conductivity at 20° C. or higher and 1500° C. or lower is 0.45 W/(m·K) or less, and the compressive strength is 2 MPa or more.

Abstract: A heat-insulating material is provided in which thermal conductivity is controlled not to increase and good insulation properties are held even in a high temperature range. The heat-insulating material is formed of a spinel porous sintered body having a porosity of 65 to 90 vol. % and represented by a chemical formula XAl2O4 (X=Zn, Fe, Mg, Ni, or Mn) which is arranged such that large pores having a diameter of greater than 1000 ?m occupy 25 vol. % or less of the total pore volume, fine pores having a diameter of 0.45 ?m or less occupy 5 to 40 vol. % of the volume of the pores having a diameter of 1000 ?m or less, at least one pore-diameter distribution peak is within a range of 0.14 to 10 ?m, and is formed of sintered particles having a calculated average particle diameter of 0.04 to 1 ?m.

Abstract: Provided is a wavelength converting member made of a sintered body which inhibits color unevenness of exit light after wavelength conversion and has excellent light emitting efficiency and inhibited decrease in mechanical strength. The wavelength converting member includes a plate-like sintered body having one principal surface as a light entrance surface and the other principal surface opposite to the entrance surface as a light exit surface, in which the plate-like sintered body has a porosity of 0.1% or less which has fluorescent material grains containing an activator and light-transmitting material grains, the entrance surface and the exit surface are a sintered surface in which the fluorescent material grains and light-transmitting material grains are exposed without processing.

Abstract: There is provided a focus ring formed without an adhesive that can suppress abnormal electric discharge and obtain uniform plasma environment in a circumferential direction in a plasma processing apparatus. The focus ring includes a plurality of arc-shaped members and a plurality of connecting members connecting the plurality of the arc-shaped members to form a ring shape without an adhesive, and is formed such that a thickness between an upper surface of the connecting member and a bottom surface of a concave fitting portion of the connecting member is greater than a thickness between an upper surface of the arc-shaped member and a bottom surface of a second depression of the arc-shaped member.

Abstract: A culture substrate made of ceramics of any one or more of titania, alumina, zirconia, yttria, and carbon is used where minute pores having a pore diameter of from 0.1 ?m to 10 ?m are provided at least for a place to which a cell is seeded, and an undifferentiated cell is seeded to at least one place of a surface of the culture substrate, whereby a culture substrate and a culture method for efficiently culturing the undifferentiated cell to be formed into a 3-dimensional cell block shape without causing immune rejection, and an undifferentiated cultured cell.

Abstract: A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an AxB1-xN layer (A and B: 13 group elements, 0?x?1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the AxB1-xN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy Egap, and let a band gap energy value of AxB1-xN (x=1) be EA and a band gap energy value of AxB1-xN (x=0) be EB, x is calculated from Equation Egap=(1?x)EB+xEA?bx(1?x) (where b is bowing parameter corresponding to A and B).

Abstract: The present invention relates to a ceramics composite including: a matrix phase including Al2O3 or a substance in which one selected from Sc2O3 and Ga2O3 is incorporated into Al2O3; a main phosphor phase formed in the matrix phase and including a substance represented by a general formula A3B5O12:Ce in which A is at least one selected from Y, Gd, Tb, Yb and Lu and B is at least one selected from Al, Ga and Sc; and a CeAl11O18 phase mixed in the matrix phase and the main phosphor phase.

Abstract: The present invention relates to a ceramics composite including an inorganic material which includes: a matrix phase including a translucent ceramics; and a phosphor phase including YAG containing Ce, in which a content of the phosphor phase is from 22% by volume to 55% by volume based on the whole phase including the matrix phase and the phosphor phase, a content of Ce in the YAG is 0.005 to 0.05 in terms of an atomic ratio of Ce to Y (Ce/Y), and the ceramics composite has a thickness in a light outgoing direction of 30 ?m to 200 ?m.

Abstract: A nitride semiconductor substrate suitable for a high withstand voltage power device is provided in which current collapse is controlled, while reducing leakage current. In a nitride semiconductor substrate, wherein a buffer layer, an active layer, and an electron supply layer, each comprising a group 13 nitride, are stacked one by one on a silicon single crystal substrate, the buffer layer has a structure where a multilayer stack in which a pair of nitride layers having different concentrations of Al or Ga are repeatedly deposited a plurality of times on an initial layer of AlxGa1-xN (0?x?1) is stacked, and includes a doping layer whose carbon concentration is 1×1018 to 1×1021 cm?3 and whose Si concentration is 1×1017 to 1×1020 cm?3, a thickness of the doping layer is 15% or more of the total thickness of the buffer layer.

Abstract: A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or ?1° to ?0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×1018 to 1×1021 cm?3, the Si single crystal substrate 2 has a SiO2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 ?m.

Abstract: A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse. In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05?x?0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0?y?0.04).

Abstract: A heat-insulating material is provided in which thermal conductivity is controlled not to increase and good insulation properties are held even in a high temperature range. The heat-insulating material is formed of a spinel porous sintered body having a porosity of 65 to 90 vol. % and represented by a chemical formula XAl2O4 (X?Zn, Fe, Mg, Ni, or Mn) which is arranged such that large pores having a diameter of greater than 1000 ?m occupy 25 vol. % or less of the total pore volume, fine pores having a diameter of 0.45 ?m or less occupy 5 to 40 vol. % of the volume of the pores having a diameter of 1000 ?m or less, at least one pore-diameter distribution peak is within a range of 0.14 to 10 ?m, and is formed of sintered particles having a calculated average particle diameter of 0.04 to 1 ?m.

Abstract: A micro channel structure body 10 in which a micro channel 3 having a predetermined cross-sectional shape is formed in a laminate where substrates 1a, 1b, and 1c having formed thereon electrodes 2a, 2b, and 2c made of a thin film are laminated sequentially. The above-mentioned micro channel 3 is formed in a perpendicular direction ? perpendicular to a lamination direction ? of the above-mentioned laminate. Inner surfaces 3a and 3b of the above-mentioned micro channel 3 have an acute angle ? with respect to the lamination direction ? of the above-mentioned laminate. The above-mentioned plurality of electrodes 2a, 2b, and 2c are formed and exposed in the lamination direction ? of the inner surfaces 3a and 3b of the above-mentioned micro channel 3.

Abstract: The present invention relates to a cell culture support for culturing mesenchymal stem cells, which includes en upper surface including a plurality of wells, in which the upper surface has a root mean square roughness Rq of 100 to 280 nm and a linear density of 1.6 to 10 per 1 ?m length.

Abstract: A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an AxB1-xN layer (A and B: 13 group elements, 0?x?1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the AxB1-xN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy Egap, and let a band gap energy value of AxB1-xN (x=1) be EA and a band gap energy value of AxB1-xN (x=0) be EB, x is calculated from Equation Egap=(1?x)EB+xEA?bx(1?x) (where b is bowing parameter corresponding to A and B).

Abstract: A nitride semiconductor substrate is provided in which leak current reduction and improvement in current collapse are effectively attained when using Si single crystal as a base substrate. The nitride semiconductor substrate is such that an active layer of a nitride semiconductor is formed on one principal plane of a Si single crystal substrate through a plurality of buffer layers made of a nitride, in the buffer layers, a carbon concentration of a layer which is in contact with at least the active layer is from 1×1018 to 1×1020 atoms/cm3, a ratio of a screw dislocation density to the total dislocation density is from 0.15 to 0.3 in an interface region between the buffer layer and the active layer, and the total dislocation density in the interface region is 15×109 cm?2 or less.

Abstract: The present invention relates to a ceramics composite including: a matrix phase including Al2O3 or a substance in which one selected from Sc2O3 and Ga2O3 is incorporated into Al2O3; a main phosphor phase formed in the matrix phase and including a substance represented by a general formula A3B5O12:Ce in which A is at least one selected from Y, Gd, Tb, Yb and Lu and B is at least one selected from Al, Ga and Sc; and a CeAl11O18 phase mixed in the matrix phase and the main phosphor phase.

Abstract: A carbon-fiber-reinforced silicon-carbide-based composite material which has better strength and toughness, and a braking material, such as a brake disc using the composite material, are provided. By using the carbon-fiber-reinforced silicon-carbide-based composite material including a bundle of fibers having chopped carbon fibers arranged in parallel and the other carbon component, carbon, silicon, and silicon carbide, in which the fiber bundle is flat, its cross-section perpendicular to its longitudinal direction has a larger diameter of 1 mm or more, a ratio of the larger diameter to a smaller diameter is from 1.5 to 5, and a plurality of the fiber bundles are randomly oriented substantially along a two-dimensional plane, and a two-dimensional side serves as a braking side to thereby constitute the braking material.