Patents Assigned to Coversant Intellectual Property Management Inc.
  • DRAM memory device with manufacturable capacitor
    Patent number: 9252205
    Abstract: A high capacitance embedded capacitor and associated fabrication processes are disclosed for fabricating a capacitor stack in a multi-layer stack to include a first capacitor plate conductor formed with a cylinder-shaped storage node electrode formed in the multi-layer stack, a capacitor dielectric layer surrounding the cylinder-shaped storage node electrode, and a second capacitor plate conductor formed from a conductive layer in the multi-layer stack that is sandwiched between a bottom and top dielectric layer, where the cylinder-shaped storage node electrode is surrounded by and extends through the conductive layer.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: February 2, 2016
    Assignee: Coversant Intellectual Property Management Inc.
    Inventor: Hyoung Seub Rhie
  • Using interrupted Through-Silicon-Vias in integrated circuits adapted for stacking
    Patent number: 9190369
    Abstract: In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: November 17, 2015
    Assignee: Coversant Intellectual Property Management Inc.
    Inventor: Peter Gillingham