Abstract: A method and apparatus for manufacturing high-purity long silicon seed rods with controlled resistivity for Siemens and similar processes with using a film of silicon dioxide, wherein a film of silicon dioxide is formed on the seed rod in the course of a reaction between a silicon melt and oxygen. The rod is formed with a quartz die and cooled by direct immersion into a cooling fluid, such as de-ionized water and/or by cooling fluid vapor in the gas cooling zone.
Abstract: A method and apparatus for manufacturing high-purity long silicon seed rods with controlled resistivity for Siemens and similar processes with using a film of silicon dioxide, wherein a film of silicon dioxide is formed on the seed rod in the course of a reaction between a silicon melt and oxygen. The rod is formed with a quartz die and cooled by direct immersion into a cooling fluid, such as de-ionized water and/or by cooling fluid vapor in the gas cooling zone.
Abstract: A method and apparatus for manufacturing high-purity long silicon seed rods with controlled resistivity for Siemens and similar processes with using a film of silicon dioxide, wherein a film of silicon dioxide is formed on the seed rod in the course of a reaction between a silicon melt and oxygen. The rod is formed with a quartz die and cooled by direct immersion into a cooling fluid, such as de-ionized water and/or by cooling fluid vapor in the gas cooling zone.