Abstract: A surface emission type electron source including a first electrode having a planar form, a second electrode having a planar form facing the first electrode, an electron passage layer disposed between the first electrode and the second electrode, an insulator or semiconductor layer between the second electrode and the electron passage layer, and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are made of silicon and spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. Protrusions protruding toward leading ends of the quantum wires are formed on a back surface of the second electrode at positions corresponding to the quantum wires.

Abstract: A method of evaluating astigmatism of an irradiation system irradiating an electron beam is disclosed. In this method, a figure pattern consisting of plural (for example, four) concentric circles is formed on a reference sample “WP” and an image (scanned image) is formed based on an electron signal obtained by scanning the electron beam onto the reference sample “WP”. In the scanned image, the image has a blur in a region with its longitudinal direction parallel to the generating direction of the astigmatism and the size of the blur depends on magnitude of the astigmatism. Therefore, the direction and the magnitude of the astigmatism of the irradiation system of an irradiation apparatus can be detected based on the obtained scanned image.

Abstract: An electron beam applying apparatus includes: a thermal field emission type electron source emitting an electron beam; an electrostatic lens disposed immediately below the electron source and acting as a condensing electrode for condensing the electron beam in a first angular aperture emitted by the electron source in a second angular aperture smaller than the first angular aperture; a condenser lens disposed on a downstream side of the electrostatic lens and condensing the electron beam condensed in the second aperture angel by the electrostatic lens in a crossover point; and an objective lens disposed on a downstream side of the condenser lens and condensing the electron beam condensed in the crossover point by the condenser lens on the surface of the material.

Abstract: A method of evaluating astigmatism of an irradiation system irradiating an electron beam is disclosed. In this method, a figure pattern consisting of plural (for example, four) concentric circles is formed on a reference sample “WP” and an image (scanned image) is formed based on an electron signal obtained by scanning the electron beam onto the reference sample “WP”. In the scanned image, the image has a blur in a region with its longitudinal direction parallel to the generating direction of the astigmatism and the size of the blur depends on magnitude of the astigmatism. Therefore, the direction and the magnitude of the astigmatism of the irradiation system of an irradiation apparatus can be detected based on the obtained scanned image.

Abstract: An electron beam applying apparatus includes: a thermal field emission type electron source emitting an electron beam; an electrostatic lens disposed immediately below the electron source and acting as a condensing electrode for condensing the electron beam in a first angular aperture emitted by the electron source in a second angular aperture smaller than the first angular aperture; a condenser lens disposed on a downstream side of the electrostatic lens and condensing the electron beam condensed in the second aperture angel by the electrostatic lens in a crossover point; and an objective lens disposed on a downstream side of the condenser lens and condensing the electron beam condensed in the crossover point by the condenser lens on the surface of the material.

Abstract: The present invention aims at providing a device and method for writing a line with a high degree of precision at high speed. Distance calculation means 311 calculates the start-to-end point distance L of a writing pattern (S502), and number-of-scan-clocks calculating means 312 calculates the number of scan clocks required to write the writing pattern based on the start-to-end point distance L and a unit distance corresponding to the minimum time resolution for a high-speed D/A converter 306 (S503). Count conversion means 605 separates the start-to-end point distance L into X and Y components to convert them in an equation using the number of scan clocks (S504). Based on the equation, variable rate calculating means 314 calculates an extinction ratio to determine the extinction ratio at a variable attenuator 307 (S505).

Abstract: The present invention aims at providing a device and method for writing a line with a high degree of precision at high speed. Distance calculation means 311 calculates the start-to-end point distance L of a writing pattern (S502), and number-of-scan-clocks calculating means 312 calculates the number of scan clocks required to write the writing pattern based on the start-to-end point distance L and a unit distance corresponding to the minimum time resolution for a high-speed D/A converter 306 (S503). Count conversion means 605 separates the start-to-end point distance L into X and Y components to convert them in an equation using the number of scan clocks (S504). Based on the equation, variable rate calculating means 314 calculates an extinction ratio to determine the extinction ratio at a variable attenuator 307 (S505).