Abstract: A circuit has a magnetic sensor that produces an uncompensated magnetic sensor output signal. A temperature sensor produces an ambient temperature signal. A compensation circuit is connected to the magnetic sensor and the temperature sensor. The compensation circuit is configured to add a computed temperature compensation signal to the uncompensated magnetic sensor output signal to produce a magnetic sensor temperature compensated output signal that reduces thermally induced variation of the uncompensated magnetic sensor output signal.

Abstract: An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.

Abstract: An apparatus includes a circuit including multiple magnetic tunnel junctions, the circuit configured to convert a quadrature modulated magnetic field to a quadrature modulated electrical signal, each magnetic tunnel junction including a storage layer having a storage magnetization and a sense layer having a sense magnetization, each magnetic tunnel junction being configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to the quadrature modulated magnetic field. The apparatus further includes a module configured to demodulate the quadrature modulated electrical signal to recover a signal encoded in the quadrature modulated magnetic field.

Abstract: A device has magnetic sensors and magnets in an array on a flexible substrate. Each magnetic sensor is sensitive to immediately proximate magnets. At least one controller evaluates magnetic sensor signals from the magnetic sensors produced in response to deformation of the flexible substrate.

Abstract: An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.

Abstract: A circuit has a magnetic device to produce a pre-distorted signal from a sinusoidal input signal. The magnetic device has physical attributes selected to produce characteristics of the pre-distorted signal. A power amplifier is coupled to the magnetic device. The power amplifier processes the pre-distorted signal to produce an output signal with reduced nonlinear behavior associated with the power amplifier.

Abstract: A device has a flexible substrate supporting an array of magnetic sensors exposed to a uniform external magnetic field. One or more controllers receive magnetic sensor signals from the magnetic sensors. The one or more controllers collect reference magnetic sensor signals when the flexible substrate is aligned with the uniform external magnetic field. The one or more controllers collect first polarity magnetic sensor signals in response to deformation of the flexible substrate in a first direction. The one or more controllers collect second polarity magnetic sensor signals in response to deformation of the flexible substrate in a second direction. The magnetic sensor signals establish a profile of the orientation of the flexible substrate with respect to the uniform external magnetic field.

Abstract: An apparatus includes groups of magnetic tunnel junctions, where the magnetic tunnel junctions in each group are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The apparatus further includes a first conductive layer including conductive interconnects, a second conductive layer including straps, and a third conductive layer including field lines, each field line configured to generate a magnetic field for configuring an operating point of a corresponding subset of the magnetic tunnel junctions in each group based on a current flow through each field line. The magnetic tunnel junctions in each group are disposed between and connected to a corresponding one of the conductive interconnects and a corresponding one of the straps. The second conductive layer is disposed between the first conductive layer and the third conductive layer.

Abstract: An apparatus has magnetic logic units a logic circuit configured to receive a serial input bit stream at an input node. Individual bits of data from the serial input bit stream are serially written into individual magnetic logic units without buffering the serial input bit stream between the input node and the individual magnetic logic units. Individual bits of data from individual magnetic logic units are serially read to produce a serial output bit stream on an output node without buffering the serial output bit stream between the individual magnetic logic units and the output node.

Abstract: An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and (2) the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, where the impedance of a subset of the plurality of rows in each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.

Abstract: An apparatus includes circuits and a module configured to determine an external magnetic field based on a parameter of each circuit. Each circuit includes an array of magnetic tunnel junctions partitioned into subarrays. The magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The subarrays are connected in series. Each magnetic tunnel junction includes a storage layer having a storage magnetization and a sense layer having a sense magnetization. Each magnetic tunnel junction is configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to an external magnetic field. The parameter of each circuit varies based on a combined impedance of the multiple magnetic tunnel junctions. The module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, wherein impedance of one or more of the magnetic tunnel junctions in each of the plurality of rows of each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.

Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on a first analog input to the circuit. Each MTJ is electrically connected to a first and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of the MTJs varies based on the magnetic field. The circuit is configured to mix the first analog input and a second analog input to generate an analog output based on the output of the second output terminal.

Abstract: A circuit has a magnetic device to produce a pre-distorted signal from a sinusoidal input signal. The magnetic device has physical attributes selected to produce characteristics of the pre-distorted signal. A power amplifier is coupled to the magnetic device. The power amplifier processes the pre-distorted signal to produce an output signal with reduced nonlinear behavior associated with the power amplifier.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on an analog input to the circuit. Each MTJ is electrically connected to a first output terminal and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of each of the MTJs varies based on the magnetic field. The circuit is configured to generate an analog output based on the output of at least one of the first and the second output terminal.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: A device has a flexible substrate supporting an array of magnetic sensors exposed to a uniform external magnetic field. One or more controllers receive magnetic sensor signals from the magnetic sensors. The one or more controllers collect reference magnetic sensor signals when the flexible substrate is aligned with the uniform external magnetic field. The one or more controllers collect first polarity magnetic sensor signals in response to deformation of the flexible substrate in a first direction. The one or more controllers collect second polarity magnetic sensor signals in response to deformation of the flexible substrate in a second direction. The magnetic sensor signals establish a profile of the orientation of the flexible substrate with respect to the uniform external magnetic field.

Abstract: A device has magnetic sensors and magnets in an array on a flexible substrate. Each magnetic sensor is sensitive to immediately proximate magnets. At least one controller evaluates magnetic sensor signals from the magnetic sensors produced in response to deformation of the flexible substrate.