Patents Assigned to Crystal Device Corporation
  • Publication number: 20180151793
    Abstract: A crystal vibration element includes a plate shaped crystal blank including a pair of long sides and pair of short sides when viewed on a plane, and a pair of excitation electrodes superimposed on the two major surfaces of the crystal blank. When viewed on a plane, each of the pair of excitation electrodes includes a pair of short edges extending along a pair of short sides on inner sides of the pair of short sides, and a pair of long edges extending along a pair of long sides on inner sides of the pair of long sides. The pair of short edges are shaped as straight line parallel to the pair of short sides, while the pair of long edges are shaped outwardly bulging when viewed on a plane.
    Type: Application
    Filed: February 7, 2017
    Publication date: May 31, 2018
    Applicant: KYOCERA Crystal Device Corporation
    Inventors: Masatoshi Yumura, Masahiko Goto
  • Publication number: 20170317661
    Abstract: A crystal blank includes a vibrating arm which extends in a direction intersecting the polarization direction. In at least one of the upper surface and lower surface which are parallel to the direction of extension of the vibrating arm and run along polarization direction, the vibrating arm is provided with two recesses (grooves) in the width direction of the surface thereby having a pair of outer walls which are positioned on the two sides of the two recesses and a middle wall which is positioned between the two recesses. In the middle wall, the apex part is located at a position lower than the apex part of each of the pair of outer walls and is thinner than each of the pair of outer walls at the same heights.
    Type: Application
    Filed: November 17, 2016
    Publication date: November 2, 2017
    Applicant: KYOCERA Crystal Device Corporation
    Inventor: Takahiro Oga
  • Publication number: 20160379908
    Abstract: The crystal device has a rectangular substrate, a frame which is provided along the outer circumferential edge of the upper surface of the substrate, an electrode pad which is provided on the upper surface of the substrate, a wiring pattern which is electrically connected to the electrode pad and is provided on the upper surface of the substrate, a crystal element which is mounted on the electrode pad, and a lid for air-tight sealing the crystal element. The thickness of the electrode pad in the vertical direction differs from the thickness of the wiring pattern in the vertical direction.
    Type: Application
    Filed: February 23, 2016
    Publication date: December 29, 2016
    Applicant: KYOCERA Crystal Device Corporation
    Inventor: Katsuhiro Ogasawara
  • Publication number: 20150349744
    Abstract: A crystal device has a crystal blank, a first excitation electrode part which is provided on an upper surface of the crystal blank, a first wiring part which extends from the first excitation electrode part to an edge part of the upper surface, a first lead-out terminal which is provided at the edge part of the upper surface of the crystal blank, a first mounting terminal which is provided at a position facing the first lead-out terminal, a first connection part which is provided so that one end is superimposed on the first lead-out terminal and the other end is superimposed on the first mounting terminal, a substrate having a mounting pad which is provided on its upper surface, a conductive adhesive which is provided between the mounting pad and the first mounting terminal, and a lid which is bonded to the upper surface of the substrate.
    Type: Application
    Filed: May 12, 2015
    Publication date: December 3, 2015
    Applicant: KYOCERA Crystal Device Corporation
    Inventor: Kouhei Sasaoka
  • Publication number: 20150123737
    Abstract: The temperature compensated crystal oscillator has a rectangular substrate, a frame which is provided on an upper surface of the substrate, a mounting frame which has joining pads which are provided along an outer circumferential edge of the upper surface and which is provided on a lower surface of the substrate by bonding of joining terminals which are provided along the outer circumferential edge of the lower surface of the substrate and the joining pads, a crystal element which is mounted on an electrode pad which is provided on the upper surface of the substrate in a region surrounded by the frame, an integrated circuit element which has a temperature sensor and which is mounted on a connection pad which is provided on the lower surface of the substrate in a region surrounded by the mounting frame, and a lid which is joined to the upper surface of the frame.
    Type: Application
    Filed: November 4, 2014
    Publication date: May 7, 2015
    Applicant: KYOCERA Crystal Device Corporation
    Inventors: Yoshiaki Yokoo, Harushi Kenjo, Shota Takai
  • Patent number: 9006958
    Abstract: A piezoelectric device 100 is provided with an element-mounting member 110, a piezoelectric element 120 mounted on the element-mounting member 110, a metal pattern 118 which is formed at the surface of the element-mounting member 110 and includes an element-mounting region 118a and a lead region 118b, and an integrated circuit element 130 which is electrically connected to the element-mounting region 118a of the metal pattern 118 by solder bump 132, wherein the metal pattern 118 has a projecting part 119 which is provided between the element-mounting region 118a and the lead region 118b, and at least the surface portion of the projecting part 119 is made of a metal oxide.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: April 14, 2015
    Assignee: Kyocera Crystal Device Corporation
    Inventors: Takahiro Niiyama, Hironobu Shintoku, Ryoma Sasagawa, Jumpei Komura
  • Patent number: 6677214
    Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
    Type: Grant
    Filed: June 12, 2000
    Date of Patent: January 13, 2004
    Assignees: Mega Chips Corporation, Crystal Device Corporation
    Inventors: Masahiro Shindo, Daisuke Kosaka, Tetsuo Hikawa, Akira Takata, Yukihiro Ukai, Takashi Sawada, Toshifumi Asakawa
  • Patent number: 6177706
    Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atoms currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anistropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
    Type: Grant
    Filed: August 27, 1997
    Date of Patent: January 23, 2001
    Assignees: Mega Chips Corporation, Crystal Device Corporation
    Inventors: Masahiro Shindo, Daisuke Kosaka, Tetsuo Hikawa, Akira Takata, Yukihiro Ukai, Takashi Sawada, Toshifumi Asakawa
  • Patent number: 6137120
    Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
    Type: Grant
    Filed: August 27, 1997
    Date of Patent: October 24, 2000
    Assignees: Mega Chips Corporation, Crystal Device Corporation
    Inventors: Masahiro Shindo, Daisuke Kosaka, Tetsuo Hikawa, Akira Takata, Yukihiro Ukai, Takashi Sawada, Toshifumi Asakawa
  • Patent number: 6106734
    Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.
    Type: Grant
    Filed: August 25, 1997
    Date of Patent: August 22, 2000
    Assignees: Mega Chips Corporation, Crystal Device Corporation
    Inventors: Masahiro Shindo, Daisuke Kosaka, Tetsuo Hikawa, Akira Takata, Yukihiro Ukai, Takashi Sawada, Toshifumi Asakawa
  • Patent number: 5738731
    Abstract: A solar cell comprising:a first junction part having a first conductivity type first semiconductor film and a second conductivity type second semiconductor film formed on an upper surface of said first semiconductor film; anda second junction part having a first conductivity type third semiconductor film formed on an upper surface of said second semiconductor film and a second conductivity type fourth semiconductor formed on an upper surface of said third semiconductor film,said junction parts arranged from that having a larger forbidden band width along the direction of progress of light through said semiconductor layers,said first, second, third, and fourth semiconductor films being formed of single-crystalline filming;wherein an interlayer conductor prepared from a metal forming ohmic junctions with each of said junction parts and having a thickness capable of transmitting light therethrough is interposed between said first and second junction parts; andwherein said second semiconductor film arranged on on
    Type: Grant
    Filed: August 31, 1994
    Date of Patent: April 14, 1998
    Assignees: Mega Chips Corporation, Crystal Device Corporation
    Inventors: Masahiro Shindo, Daisuke Kosaka, Tetsuo Hikawa, Akira Takata, Yukihiro Ukai, Takashi Sawada, Toshifumi Asakawa