Abstract: Provided is a novel chalcogen-containing organic semiconductor compound having excellent carrier mobility. The compound is represented by Formula (1a) or (1b): [Chem. 1] where in Formulas (1a) and (1b), X represents S, O, or Se, and R1 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an aralkyl group, a pyridyl group, a furyl group, a thienyl group, or a thiazolyl group.

Abstract: In various embodiments, degradation of epoxy within packages for ultraviolet light-emitting devices is reduced or substantially eliminated via package venting, prevention of transmission of ultraviolet light to one or more regions of epoxy utilized in the package, and/or utilization of packaging schemes that reduce or avoid utilization of epoxy and/or specific metals.

Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.

Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates are highly visibly transparent and have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Abstract: Provided is a semiconductor device and a method of manufacturing the semiconductor device that is capable of improving the connection reliability between an electronic element and a substrate in a semiconductor device in which the electronic element is fixed to the substrate. The semiconductor device includes: a substrate 10 provided with wirings and wiring connection parts 12 connected to the wirings; electronic elements 20, 30, 40, and 50 electrically connected to the wiring connection parts 12 and fixed to the substrate; and a resin film 60 laminated on one surface of the substrate 10, conforming to the shapes of the electronic elements 20, 30, 40, and 50, and covering the electronic elements 20, 30, 40, and 50.

Abstract: A portable electronic device that selectively deploys a liquid incapacitating chemical agent is described. During operation, the portable electronic device receives or provides a trigger signal. For example, the portable electronic device may include a trigger (such as a mechanical or an electronic trigger), and the portable electronic device may provide the trigger signal when the trigger is activated. Alternatively or additionally, the portable electronic device may provide the trigger signal when an individual is detected in proximity or may receive the trigger signal via wireless communication. In response to the trigger signal, a control circuit provides a control signal to a pump. Then, based at least in part on the control signal, the pump transfers the liquid incapacitating chemical agent from a reservoir to a nozzle. Next, the nozzle discharges the liquid incapacitating chemical agent, e.g., in a stream, where the stream is external to the portable electronic device.

Abstract: In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

Abstract: In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Abstract: A fluid treatment system includes a reactor chamber fluidly coupled with a fluid inlet and a fluid outlet. The reactor chamber is defined by one or more chamber walls. The system includes a UV LED, and a light pipe. The light pipe extends into the reactor chamber through at least one of the chamber walls. The light pipe has a proximal end disposed outside of the reactor chamber. The proximal end is coupled with the UV LED to transmit UV light into the reactor chamber through the light pipe. To that end, the light pipe also has a distal end, opposite the proximal end, that is disposed within an interior volume of the reactor chamber. The light pipe includes a central section disposed between the proximal end and the distal end. The central section is configured to transmit the UV light from UV LED to the distal end.

Abstract: In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.

Abstract: A system for disinfecting fluid includes a plurality of fluid reactors. Each of the fluid reactors includes at least one UVC LED. The UVC LED includes an LED chip configured to emit UVC radiation and a package coupled with the LED chip. The LED chip has a top surface that defines a chip top surface area. The top surface is formed from a semiconductor material having an index of refraction. The fluid reactor has at least one wall that defines a chamber configured to contain the fluid. The at least one wall has an aperture configured to receive UVC radiation into the chamber. The aperture extends through the at least one wall. The aperture has an aperture area that is (1) smaller than a top surface area of the package and (2) equal to or larger than the chip top surface area.

Abstract: The present invention relates to compositions in the form of an oil-in-water emulsion preferably comprising an aqueous phase, a natural wax, at least two surfactants, and a neutralizing agent.

Abstract: In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

Abstract: In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.

Abstract: A system for disinfecting fluid includes a UVC LED. The UVC LED includes an LED chip configured to emit UVC radiation and a package coupled with the LED chip. The LED chip has a top surface that defines a chip top surface area. The top surface is formed from a semiconductor material having an index of refraction. The fluid reactor has at least one wall that defines a chamber configured to contain the fluid. The at least one wall has an aperture configured to receive UVC radiation into the chamber. The aperture extends through the at least one wall. The aperture has an aperture area that is (1) smaller than a top surface area of the package and (2) equal to or larger than the chip top surface area.

Abstract: A thermophotovoltaic generator uses conveniently available liquid hydrocarbon fuels. The fuels are controllably heated and vaporized before ignition to avoid residue and deposits as a result of liquid fuel being prematurely exposed to high temperatures of combustion causing unwanted breakdowns, producing power robbing residues and deposits. Heating fuel and air to right temperatures for ignition is accomplished by drawing combustion air over an exhaust chamber, through a regenerator and through a passage surrounding an IR filter. A separate cooling fan drives air through photovoltaic cell array fins over the recuperator and the exhaust in counterflow to the combustion air.

Abstract: A chemical measurement device for determining the concentration of given chemical in a given fluid has at least one LED light source and at least one light detector. The given chemical has a light absorption curve with a peak, and the at least one LED light source and at least one light detector are configured to collaborate to produce two light signals having peak wavelengths between about 5 nm and 35 nm apart. The two light signal peak wavelengths are in the ultraviolet region with wavelengths beyond the light absorption curve peak. The light signal peak wavelengths, however, also are before the light absorption curve is negligible. The device also has a concentration calculator operatively coupled with the at least one light detector. The concentration calculator is configured to compare the two light signals to produce a concentration signal representing the concentration of the given chemical in the given fluid.

Abstract: In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.