Patents Assigned to CRYSTAL SYSTEMS CORPORATION
  • Publication number: 20120298031
    Abstract: [Technical Problem] It is an object to provide a device for a single-crystal growth and a method of a single-crystal growth in which even when materials that are different in, for example, a melting point or a diameter are to be grown, the conditions for the stable growth of a single crystal can be obtained and a high-quality single crystal having a desired diameter can hence be grown. In addition, the device and the method have a reduced fluctuation of heating intensity to facilitate a crystal growth. [Solution of Problem] A device for a single-crystal growth is provided with a raw material rod (14) that is supported by an upper crystal driving shaft (8), a seed crystal rod (16) that is supported by a lower crystal driving shaft (12), and a heating means, and a contact part of the raw material rod (14) with the seed crystal rod (16) is heated with a heating means to form a melting zone (18) and grow a single crystal.
    Type: Application
    Filed: December 28, 2010
    Publication date: November 29, 2012
    Applicants: CRYSTAL SYSTEMS CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Toshimitsu Ito, Yasuhide Tomioka, Yuji Yanagisawa, Isamu Shindo, Atsushi Yanase