Abstract: The invention is a method for growing a critical adherent diamond layer on a substrate by Chemical Vapor Deposition (CVD) and the article produced by the method. The substrate can be a compound semiconductor coated with an adhesion layer. The adhesion layer is preferably a dielectric, such as silicon nitride, silicon carbide, aluminum nitride or amorphous silicon, to name some primary examples. The typical thickness of the adhesion layer is one micrometer or less. The resulting stack of layers, (e.g. substrate layer, adhesion layer and diamond layer) is structurally free of plastic deformation and the diamond layer is well adherent to the dielectric adhesion layer such that it can be processed further, such as by increasing the thickness of the diamond layer to a desired level, or by subjecting it to additional thin film fabrication process steps. In addition to preventing plastic deformation of the layer stack, the process also reduces the formation of soot during the CVD process.

Abstract: Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.

Abstract: An ultrasmooth diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europium, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.

Abstract: Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.

Abstract: Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.

Abstract: Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.

Abstract: A continuous thin diamond film having a thickness of less than about 2 microns has a low leakage. The thin diamond film may be supported on a supporting grid and may be incorporated into an X-ray window. The film may be formed in a DC assisted CVD process where in a first phase a relatively high concentration of a carbonaceous gas is introduced into the reactor and in a second phase the concentration of the carbonaceous gas is reduced to a lower value.

Abstract: An ultrasmooth diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europeum, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.

Abstract: Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.

Abstract: A method for growing a diamond film, substantially free of voids, having an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1, and a diamond-to-graphite Raman ratio greater than about 25, includes the steps of preparing a substrate by abrasion with diamond particles; placing the substrate in a CVD reactor; depositing diamond during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining the substrate at a temperature of between about 625.degree. C. and 675.degree. C.

Abstract: A block of dielectric material having a long axis and a short axis and having low losses at a selected microwave frequency and a dielectric constant selected to produce a desired degree of phase modulation is mounted on a rotatable shaft in an orientation perpendicular to the long and short axes and arranged inside a waveguide feeding a CVD reactor containing a plasma species. The block is spun by a rotational force applied to the shaft at an angular acceleration such that the two axes of the block successively intersect the axis of the waveguide within the decay period of the plasma species. The frequency of phase modulation can be varied by changing the angular acceleration of the shaft, and the amplitude of the phase modulation can be varied by changing the ratio of block length to thickness and/or by selecting a material with higher dielectric constant. The incident microwave power may be modulated as a function of angular position of the spin shaft.

Abstract: A continuous thin diamond film having a thickness of less than about 2 microns has a permeability to helium lower than about 1.times.10.sup.-6 standard cubic centimeters of helium per second per square millimeter of surface area. The thin diamond film may be supported on a supporting grid and may be incorporated into an x-ray window. The thin diamond film of the present invention may be formed in a two-stage growth process wherein a first stage a carbonaceous gas at a first concentration is introduced in to the reactor and in a second stage the concentration of the carbonaceous gas is reduced to a second lower concentration.

Abstract: Porous and non-porous compositions include diamond particles, non-diamond particles, or mixtures of particles consolidated with polycrystalline diamond. The composite compositions of the present invention may be formed by a process which includes the steps of preforming the particles into a preform having a desired shape, and consolidating the preform with polycrystalline diamond. The polycrystalline diamond is preferably formed using CVD techniques including application of sufficient microwave energy to maintain the preform at a temperature of between about 670.degree. and 850.degree. C. The preform may be rotated during a portion of the deposition process.

Abstract: A carrier for a laser diode bar comprises a generally rectangularly shaped block formed from a dielectric material having a high thermal conductivity. The block includes a stepped recess formed therein having a height essentially equal to one half the height of a laser diode bar to be mounted thereon. An assembly for mounting a laser diode bar comprises a pair of carriers in contact with one another and oriented such that their stepped recesses are in facing relationship to one another. A laser diode bar is positioned between the carriers in the space left by their combined stepped recesses. A plurality of assemblies may be placed in contact with or separated from one another.

Abstract: The present invention comprises an article formed from a plurality of non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids.

Abstract: A CVD diamond material, substantially free of voids, has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The diamond material may also comprise carbon atoms with a C.sup.13 content less than 0.05 atomic %.

Abstract: A diamond film having an intensity ratio of diamond-Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm greater than about 3, a Raman sp full width half maximum less than about 6 cm and a diamond-to-graphite Raman ratio greater than about 25. The diamond film has a thermal conductivity of at least 17 Wcm K.

Abstract: The present invention comprises an article formed for a plurality of diamond-coated fibers preformed into a desired shape. Each of the fibers has first surface regions in contact with immediately adjacent other ones of the fibers, and second surface regions spaced apart from the immediately adjacent other ones of said fibers to define boundaries of inter-fiber voids between the immediately adjacent ones of the fibers. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the fibers and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the fibers into the inter-particle voids.

Abstract: Method for consolidating diamond material, substantially free of voids, has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The diamond material may also comprise carbon atoms with a C.sup.13 content less than 0.05 atomic %.

Abstract: A diamond coated article, wherein the diamond has a thermal conductivity of at least 17 Wcm K.