Abstract: An apparatus (100) for applying product to the skin of a person in a booth (10), comprising: an applicator (57) configured to apply the product to the person; a first guide (40) configured to guide movement of an applicator in a first dimension, in order to enable the applicator to apply the product to the person at a plurality of different heights; and a second guide (20) configured to guide movement of the applicator in a second dimension, in order to enable the applicator to apply the product across the width of the person. The apparatus may comprise control circuitry for controlling the applicator in dependence upon the weight of the person.

Abstract: An optical device is presented comprising: a cavity defining a cavity axis of light propagation; at least two optical elements having their optical axes, respectively, and being aligned along said cavity axis such that the optical axes of the optical elements coincide with said cavity axis; and a positioning unit associated with at least one of said at least two optical elements. The positioning unit is configured and operable for providing controllable axial rotation of said at least one optical element about the cavity axis, thereby enabling controllable fine adjustment of orientation of said at least one optical element relative to the at least one other optical element, while keeping the aligned positions of the optical elements with respect to said cavity axis.

Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Abstract: A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

Abstract: Solar system for converting solar radiation into electric energy, the system comprising: a refraction array and a converting array, the refracting array including at least one refraction sub array, each of the refraction sub arrays including a plurality of refraction sites, each of the refraction sites refracting variable approach angle collimated solar radiation into a plurality of solar rays, each of the solar rays being of a different waveband, each of the refraction sites directing each of the solar rays, refracted thereby, in a different direction, the different direction being at least dependent on the approach angle of the solar radiation, the converting array including a plurality of broadband converting cells, positioned such that light refracted by the refraction array impinges on the converting array, wherein at any given moment, each of the converting cells receives solar rays of a specific waveband originating from different refraction sites and arriving from different directions thereto.

Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Abstract: An apparatus (100) for applying product to the skin of a person in a booth (10), comprising: an applicator (57) configured to apply the product to the person; a first guide (40) configured to guide movement of an applicator in a first dimension, in order to enable the applicator to apply the product to the person at a plurality of different heights; and a second guide (20) configured to guide movement of the applicator in a second dimension, in order to enable the applicator to apply the product across the width of the person. The apparatus may comprise control circuitry for controlling the applicator in dependence upon the weight of the person.

Abstract: A plasma generating apparatus is provided with a high vacuum processing chamber and a transformer type plasmatron that is coupled with the high vacuum processing chamber. At least one gas source is coupled with the transformer type plasmatron, for introducing at least one gas into the transformer type plasmatron. The high vacuum processing chamber includes at least one entry port. The transformer type plasmatron includes: a radio frequency power source, for generating alternating current power; a plurality of conductors, coupled with the radio frequency power source; a closed loop discharge chamber, for confining the at least one gas; a plurality of high permeability magnetic cores, coupled around an outer portion of the closed loop discharge chamber and with the plurality of conductors; a plurality of apertures, located along an inner portion of the closed loop discharge chamber; and at least two dielectric gaskets.

Abstract: An optical device is presented comprising: a cavity defining a cavity axis of light propagation; at least two optical elements having their optical axes, respectively, and being aligned along said cavity axis such that the optical axes of the optical elements coincide with said cavity axis; and a positioning unit associated with at least one of said at least two optical elements. The positioning unit is configured and operable for providing controllable axial rotation of said at least one optical element about the cavity axis, thereby enabling controllable fine adjustment of orientation of said at least one optical element relative to the at least one other optical element, while keeping the aligned positions of the optical elements with respect to said cavity axis.

Abstract: A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

Abstract: Apparatus for vapour phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first and second limbs is located on the heated zone. The first limb contains a source material. The second limb supports a seed such that the source material and seed are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source and seed. The crystal is grown on the seed.

Abstract: A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material.

Abstract: An apparatus and method for obtaining an image of an object. The apparatus comprises a radiation source and a series of two to five linear detectors spaced therefrom to define a scanning zone; means to cause an object to move relative to and through the scanning zone; a direct image generation apparatus to generate an image from the output of a linear detector; an intermediate image generation apparatus configured to generate at least one intermediate image from an adjacent pair of linear detectors, by processing the output of the pair of detectors and generating an image representative of an output intermediate between the two said detector outputs; the image apparatus adapted such that at least five and preferably at least six images are generated in total; an image display adapted successively to display such images and thus display the monocular movement parallax between the images.

Abstract: A method forms a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860° C. and approximately 870° C. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863° C., and the working pressure is within the range of 0.05 Pa and 2.5 Pa. Application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed.

Abstract: A system and method for hermetic packaging of glass sheets, that includes applying to the glass sheets surfaces that will be in contact with other adjacent glass sheets, from the cutting line, an anti-humidity chemical treatment that includes a watery solution from 1 to 2% in weight of a mixture of adipic and malic, adipic and citric, or malic and citric acids 50-50 in a dosage preferably between 100 and 400 mg/m2, to protect glass against condensation humidity or rain. Sprinkling over said surfaces of the glass sheets, 500 to 700 mg/m2 of separating powder of a selected granulometry less than 300 microns, forming a group of glass sheets. Placing a strip of cushioning material, such as the known as Polybubble Plastic, or corrugated cardboard, around the sides of the group of glass sheets, to provide a cushioning condition to the group of glass sheets during shipping and handling.

Abstract: An ingot plate (10) of cleaveable thermoelectric material has a layered structure having substantially parallel cleavage planes. Substantially all of the cleavage planes are disposed at a less cleavage angle with respect to the upper and lower faces (11, 12) of the plate. The ingot plate can be successfully cut into bars (20) along cutting planes generally perpendicular to the cleavage planes without causing substantial interlayer fracture. Electrodes (25) are formed on the opposite sides of the bar which are defined by the cutting planes. The bar is in use to be cut into a number of discrete chips (30) with one of the electrodes fixed on a substrate. Since the cutting is made along planes again generally perpendicular to the cleavage planes of the bar, the bar can be successfully cut into the corresponding chips without causing any substantial fracture.