Abstract: The present invention relates to a manufacturing method of a composite substrate. The method includes the steps of: providing a substrate; providing a precursor of group III elements and a precursor of nitrogen (N) element alternately in an atomic layer deposition (ALD) process or a plasma-enhanced atomic layer deposition (PEALD) process so as to deposit a nitride buffer layer on the substrate; and annealing the nitride buffer layer on the substrate at a temperature in the range of 300° C. to 1600° C.