Patents Assigned to CRYSTALWISE TECHNOLOGY INC.
  • Publication number: 20130181240
    Abstract: The present invention relates to a manufacturing method of a composite substrate. The method includes the steps of: providing a substrate; providing a precursor of group III elements and a precursor of nitrogen (N) element alternately in an atomic layer deposition (ALD) process or a plasma-enhanced atomic layer deposition (PEALD) process so as to deposit a nitride buffer layer on the substrate; and annealing the nitride buffer layer on the substrate at a temperature in the range of 300° C. to 1600° C.
    Type: Application
    Filed: January 18, 2013
    Publication date: July 18, 2013
    Applicants: CRYSTALWISE TECHNOLOGY INC.
    Inventors: Crystalwise Technology Inc., Ming-Jang Chen