Abstract: According to the invention, the diode with a single crystal phosphor placed over the chip selected from the InGaN, GaN or AlGaN group comprises the fact that the single crystal phosphor (21) is created from the monocrystalline ingot (51), created by LuYAG or YAP hosts, doped with the atoms selected from the Ce3+, Ti3+, Eu2+, C, Gd3+ or Ga3+ group, grown from the melt with the method selected from the Czochralski, HEM, Badgasarov, Kyropoulos or EFG group, when the Lu3+, Y3+ and Al3+ atoms can be replaced in the host up to the amount of 99.9% with the B3+, Gd3+ or Ga3+ atoms.

Abstract: Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60° from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.

Abstract: According to the invention, the diode with a single crystal phosphor placed over the chip comprises the fact that the single crystal phosphor, created by LnYAG and/or YAP and/or GGAG hosts, doped with the atoms selected from the Ce3+, Ti, Cr3+, Sm2+, B3+, Gd3+ or Ga3+ group, when the Lu3+, Y3+ and Al3+ atoms can be replaced in the host up to the amount of 99.9% with the B3+, Gd3+ or Ga3+ atoms. The composition and manner of production of the phosphor, treatment and shape of its surface and construction of the whole diode ensure the extraction of the converted light in the direction from the chip itself of the diode towards the object that is being illuminated and limit the total reflection effect on the interface of the single crystal phosphor and encapsulant or single crystal phosphor and surrounding environment.

Abstract: A scintillation detection unit for the detection of back-scattered electrons for electron and ion microscopes, in which the scintillation detection unit consists of body and at least one system for processing the light signal, where the body is at least partly made of scintillation material and is at least partly situated in a column of an electron or ion microscope and is made up of at least one hollow part. The height of the body of scintillation detection unit measured in the direction of longitudinal axis is greater than one-and-a-half times the greatest width measured in the direction perpendicular to the longitudinal axis of the hollow part with the greatest width. The walls of the hollow parts are vacuum-sealed in the areas outside bottom holes and top holes and make up part of a vacuum-sealed jacket which is passed through by the primary beam of electrons.

Abstract: Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60° from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.

Abstract: A scintillation detection unit for the detection of back-scattered electrons for electron and ion microscopes having a column with longitudinal axis, in which the scintillation detection unit consists of body and at least one system for processing the light signal comprising a photodetector or a photodetector preceded with additional optical members where the body is at least partly made of scintillation material and is at least partly situated in a column of an electron or ion microscope and is made up of at least one hollow part. The height of the body of scintillation detection unit measured in the direction of longitudinal axis is greater than one-and-a-half times the greatest width measured in the direction perpendicular to the longitudinal axis of the hollow part with the greatest width.