Abstract: Method of manufacturing a photovoltaic device, comprising the steps of: providing a substrate; depositing a first electrode layer on said substrate; depositing a p-type hole transport layer on said first electrode layer; depositing a Perovskite-based absorber layer on said p-type hole transport layer; depositing an n-type electron transport layer on said Perovskite-based absorber layer; and depositing a second electrode layer on said n-type electron transport layer, wherein said second electrode layer comprises boron doped zinc oxide or tin oxide and is deposited by chemical vapour deposition at an absolute pressure of 5 mbar or less.

Abstract: Ion-selective sensor (6) comprising a micro-machined chip with an analyte micro-channel (2), adapted to draw an analyte solution and a first liquid membrane micro channel (3) adapted to draw a liquid membrane solution, and an first electrolyte micro channel (1), adapted to draw an analyte solution. The ion-selective sensor (6) comprises a first substrate (100) and a second substrate (200) comprising each a structured surface to form, after assembly of said substrates the analyte micro-channel (2), the first electrolyte micro channel (1) and the first liquid membrane micro channel (3), each provided with their respective inlet and outlet.

Abstract: The present invention relates to the realization of particular supramolecular assemblies of dyes, in particular cyanines, called J aggregates. The invention concerns an assembly made up of a support including a mesoporous layer whereof the pores have an average BET diameter greater than 1.5 nm, macromolecules with dendritic architecture functionalizing said layer, at least in its pores, a layer of molecules from the family of cyanines interacting with the macromolecules with dendritic architecture and organized into J aggregates.

Abstract: The present invention concerns a phase-locked loop comprising: a variable oscillator connected to a first resonator, said oscillator being able to deliver an output signal at a first output frequency Fout1, a first frequency divider receiving said output signal and able to convert it into a divided frequency signal Fout1/n, a reference oscillator connected to a second so-called reference resonator, delivering a reference signal at a low reference frequency Fref, generating an electrical dissipation lower than a microampere, a phase comparator measuring the phase error between the divided frequency signal Fout1/n and the reference signal and being able to produce a test signal, a low-pass filter or an integrating circuit able to filter the test signal and able to generate a voltage or a control word designed to control the voltage-controlled or digitally controlled oscillator.

Abstract: An active cell for a photosensitive sensor that includes photosensitive diode in which the transistors of the cell are implemented using CMOS technology. The cell operates with an exposure phase in which the quantity of light impinging on the cell is detected followed by a scanning phase during which the luminance information caused by the impinging light is extracted from the cell. The cell is arranged in such a way to virtually completely isolate the charge accumulation node from the remainder of the cell after the exposure phase to eliminate stray accumulation of charge carriers.

Abstract: There is disclosed a differential oscillator circuit including first (10) and second (20) branches each including the series arrangement, between high (VDD) and low (VSS) supply potentials, of a first transistor (4, 5), a first current source (2, 3) and resistor means (8, 9, 18, 19; 18*, 19*). The first transistors are interconnected so as to form a crossed pair of transistors, the most positive current terminal of each transistor (on the “drain” side) being connected to the control terminal of the other transistor of the crossed pair. This differential oscillator circuit further includes an electro-mechanical resonator (6) connected to the crossed transistor pair on the “drain” side, as well as a capacitive element (7) connected to the crossed transistor pair on the “source” side. Advantageously, for high frequency applications, the electro-mechanical resonator can be of the bulk acoustic wave type.