Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.

Abstract: As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step is then performed through the openings in the mask, and after a processing step is completed the mask is adjusted by a re-flow process in which the structure is placed into an atmosphere of solvent vapor of a solvent of the mask material. By way of the re-flow process, the mask material softens and re-flows to reduce the size of the openings in the mask causing edges of the surface areas on which the processing step was performed to be covered by the mask for subsequent processing steps.

Abstract: As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step is then performed through the openings in the mask, and after a processing step is completed the mask is adjusted by a re-flow process in which the structure is placed into an atmosphere of solvent vapor of a solvent of the mask material. By way of the re-flow process, the mask material softens and re-flows to reduce the size of the openings in the mask causing edges of the surface areas on which the processing step was performed to be covered by the mask for subsequent processing steps.

Abstract: As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step is then performed through the openings in the mask, and after a processing step is completed the mask is adjusted by a re-flow process in which the structure is placed into an atmosphere of solvent vapor of a solvent of the mask material. By way of the reflow process, the mask material softens and re-flows to reduce the size of the openings in the mask causing edges of the surface areas on which the processing step was performed to be covered by the mask for subsequent processing steps.

Abstract: A thin film of organic resin material (17), such as novolac, is used as an etch mask and openings (32) are formed in the mask in a predetermined pattern to allow processing in selected areas defined by the openings. The openings (32) are formed by applying a pattern of droplets (76) of caustic etchant, such as sodium hydroxide (NaOH) or potassium hydroxide (KOH) in the areas where the openings are to be formed. The droplets (76) are applied using a inkjet printer (90) which is scanned over the surface of the organic resin as the droplets are applied. The droplets (76) are of a size which defines the dimension of the openings (32) and allows the organic resin (17) under the droplet (76) to be completely removed. After the etchant has etched through the organic resin to expose an underlying surface (12), the etchant is washed from the organic resin and the openings (32).

Abstract: Silicon (12) is etched through a mask (11) comprising a layer of organic resin material (such as novolac) through which openings (32) are formed in the areas to be etched. The layer of organic resin is first deposited over a free surface of the device to be etched. The openings (32) are then formed by depositing droplets of a caustic etchant such as sodium hydroxide (NaOH) or potassium hydroxide (KOH) with an inkjet printer. The etchant reacts with the resin to expose the silicon surface in areas to be etched. The etching of the silicon surface is performed by applying a dilute solution of hydrofluoric acid (HF) and potassium permanganate (KMnO4) to the exposed surface through the openings in the mask to etch the silicon to a desired depth (83).

Abstract: As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step is then performed through the openings in the mask, and after a processing step is completed the mask is adjusted by a re-flow process in which the structure is placed into an atmosphere of solvent vapor of a solvent of the mask material. By way of the reflow process, the mask material softens and re-flows to reduce the size of the openings in the mask causing edges of the surface areas on which the processing step was performed to be covered by the mask for subsequent processing steps.

Abstract: A thin film of organic resin material (17), such as novolac, is used as an etch mask and openings (32) are formed in the mask in a predetermined pattern to allow processing in selected areas defined by the openings. The openings (32) are formed by applying a pattern of droplets (76) of caustic etchant, such as sodium hydroxide (NaOH) or potassium hydroxide (KOH) in the areas where the openings are to be formed. The droplets (76) are applied using a inkjet printer (90) which is scanned over the surface of the organic resin as the droplets are applied. The droplets (76) are of a size which defines the dimension of the openings (32) and allows the organic resin (17) under the droplet (76) to be completely removed. After the etchant has etched through the organic resin to expose an underlying surface (12), the etchant is washed from the organic resin and the openings (32).

Abstract: Silicon (12) is etched through a mask (11) comprising a layer of organic resin material (such as novolac) through which openings (32) are formed in the areas to be etched. The layer of organic resin is first deposited over a free surface of the device to be etched. The openings (32) are then formed by depositing droplets of a caustic etchant such as sodium hydroxide (NaOH) or potassium hydroxide (KOH) with an inkjet printer. The etchant reacts with the resin to expose the silicon surface in areas to be etched. The etching of the silicon surface is performed by applying a dilute solution of hydrofluoric acid (HF) and potassium permanganate (KMnO4) to the exposed surface through the openings in the mask to etch the silicon to a desired depth (83).